Abstract: In order to provide a semiconductor device that includes a conductive layer on one surface of a semiconductor substrate with an insulating layer therebetween, a bump on the other surface of the semiconductor substrate, and a through-electrode through the semiconductor substrate connecting the conductive layer with the bump, a through-hole is formed from the other surface of the semiconductor substrate to be connected to the conductive layer, a seed metal film is formed on the through-hole and the other surface, a photoresist is formed thereon, a mask layer is formed by processing the photoresist with a pattern larger than the through-hole, a plated film is grown by electrolytic plating so as to integrally form the through-electrode and a part of the bump.