Abstract: A semiconductor manufacturing facility includes: a process chamber in which an amorphous carbon layer (ACL) process in which amorphous carbon is deposited so that an ACL is formed, is performed; a vacuum pump in which a residual gas generated in the process chamber is discharged from the process chamber while the ACL process is performed; a chamber exhaust pipe through which the process chamber and the vacuum pump communicate with each other; a plasma reactor configured to form a plasma reaction region using plasma; and a gas supplying device configured to supply a treatment gas to the plasma reactor.

Abstract: A plasma reactor for inductively coupled plasma includes: a ferrite core assembly including a ferrite core stacked body including a plurality of ferrite cores stacked and a first passage portion and a second passage portion arranged in parallel, and a ferrite core accommodating structure; a first chamber body including a first base portion configured to provide a first internal space therein, a first A-extension pipe extending from the first base portion, communicating with the first internal space and accommodated in the first passage portion, and a second A-extension pipe extending from the first base portion; and a second chamber body including a second base portion configured to provide a second internal space therein, a first B-extension pipe extending from the second base portion, and a second B-extension pipe extending from the second base portion.

Abstract: According to the present invention, provided is an inductively coupled plasma reactor including: a reaction chamber configured to provide a plasma reaction space; a ferrite core arranged to surround the plasma reaction space; and an antenna coil formed by winding a strip-shaped wire structure on the ferrite core, wherein the wire structure includes a plurality of electrically conductive wires and a covering made of a flexible material and configured to surround the plurality of electrically conductive wires.

Abstract: A piping apparatus includes an exhaust pipe providing a passage through which the exhaust gas discharged, and a harmful gas treatment device positioned between a rear end of the vacuum pump and a front end of the exhaust pipe or positioned on the exhaust pipe, wherein the harmful gas treatment device includes a heating means for increasing the temperature of the exhaust gas so as to prevent a sublimable component, from among components included in the exhaust gas, from being sublimated and accumulated inside the exhaust pipe, and the heating means is positioned on a section including a sublimation condition occurrence point, at which a sublimation condition of the sublimable component occurs, and an upstream side of the sublimation condition occurrence point on the exhaust pipe, and the sublimation condition is a temperature condition for the pressure of the sublimable component.

Abstract: Provided is an apparatus for processing exhaust fluid in which a fluid generated in a process chamber of an apparatus for manufacturing a semiconductor, a display panel, or a solar cell is ejected to the outside.

Abstract: Provided is an apparatus for processing exhaust fluid in which a fluid generated in a process chamber of an apparatus for manufacturing a semiconductor, a display panel, or a solar cell is ejected to the outside.

Abstract: Disclosed is a dry vacuum pump for evacuating a processing chamber in a semiconductor or display manufacturing device, or for evacuating gaseous substance and/or byproducts generated in the process chamber. The dry vacuum pump does not need a partition wall between the roots rotor and the screw rotor. A space is formed at the under sides of the roots rotor and the screw rotor to contain the object substance therein.

Abstract: A complex dry vacuum pump including a root rotor and a screw rotor is disclosed for manufacturing semiconductors and/or displays in a vacuum state in a process chamber, and discharging gaseous material and/or by-products generated during manufacturing to the exterior of the process chamber. The pump can provide high gas compression transfer efficiency so as to form a vacuum in the process chamber and/or keep high gas compression transfer efficiency when the gaseous material and/or by-products are discharged. Balance between the root rotor and the screw rotor can prevent vibration and noise generated in the vacuum pump, and molding material associated with the pump may allow a stator coil to be separated and prevent various by-products from flowing from the vacuum pump.

Abstract: A complex dry vacuum pump including a root rotor and a screw rotor is disclosed for manufacturing semiconductors and/or displays in a vacuum state in a process chamber, and discharging gaseous material and/or by-products generated during manufacturing to the exterior of the process chamber. The pump can provide high gas compression transfer efficiency so as to form a vacuum in the process chamber and/or keep high gas compression transfer efficiency when the gaseous material and/or by-products are discharged. Balance between the root rotor and the screw rotor can prevent vibration and noise generated in the vacuum pump, and molding material associated with the pump may allow a stator coil to be separated and prevent various by-products from flowing from the vacuum pump.