Abstract: In one aspect, the invention provides a semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.

Abstract: A method of micromachining silicon to form relatively thick boss areas and relatively thin flexure areas. The method includes the provision of a deep diffusion of n-type dopant atoms in the vicinity of the desired thick boss structures on a p-type silicon substrate. A layer having a thickness equal to the desired thickness of a flexure area is epitaxially grown of n-type doped silicon over the previously doped p-type substrate. Finally, the p-type doped silicon is etched away by a suitable etchant leaving relatively thick boss areas joined by relatively thin flexure areas.

Abstract: In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.

Abstract: A gauge or differential pressure sensor has a base portion having walls which define a cavity within the base portion and a diaphragm portion positioned over the cavity. The base portion comprises silicon; the diaphragm portion comprises silicon; the substrate has a passageway from a surface of the substrate into the chamber; the walls of the cavity form an angle with the diaphragm of no more than ninety degrees; and the chamber has a depth of at least about 5 microns. Preferably, the pressure sensor has a lip within the passageway which prevents an adhesive used to glue the sensor to a base from flowing to the diaphragm and fouling it. The pressure sensor is made by forming a cavity in a first wafer, fusion bonding a second wafer over the first wafer in an oxidizing environment, and using the thin oxide formed when fusion bonding the wafers as an etch stop when opening the cavity to the atmosphere. Etch conditions are selected to form the preferred lip in the passageway.

Abstract: A pressure transducer is provided for measuring pressure within a measurand environment, the transducer comprising a header which includes a substantially nondeformable molded housing formed from a first thermoplastic material defining a cavity and first and second openings into the cavity and a resilient diaphragm formed from the first thermoplastic material molded to the housing and spanning the first opening; a pressure sensing device disposed within the housing; and a pressure transfer medium disposed within the cavity so as to couple the diaphragm to the pressure sensing device.

Abstract: The present invention discloses a method and apparatus for testing the operational capability of flexure area equipped sensors especially those made of micromachined silicon. A thermal actuator beam is provided to bridge the structures which are joined by the flexure area. During the test, the beam's temperature is changed relative to that of the flexure area so as to provide a differential expansion or contraction. The result is that the flexure area bends and conventional bending sensors for the flexure area can sense the amount of bend. By comparing the actual amount of bend sensed with the amount expected from the temperature change applied to the beam, the operational capability can be determined.

Abstract: An electromechanical sensor is provided which comprises an n-type semiconductor region which defines a flexible member surrounded by a thicker base portion; at least one piezoresistor formed in the semiconductor region; an n+ region formed in the thicker base portion; a first insulative layer which overlays the piezoresistor and which extends at least from the piezoresistor to the first n+ doped region; a guard layer which overlays at least a portion of the first insulative layer such that the guard layer overlays the piezoresistor and extends at least from the piezoresistor to a point adjacent to the n+ region; and a first bias contact which electrically interconnects the n+ region and the guard layer.