Abstract: A luminescent temperature sensor comprising (i) an object having a recess, (ii) a layer of luminescent material disposed in the recess, wherein the luminescent material emits electromagnetic radiation having a detectable optical characteristic that is functionally dependent on the temperature of the object, and (iii) a light waveguide in optical communication with the layer of luminescent material, is provided. A test device for measuring a temperature in a processing step comprising (i) an object having a surface and having a recess in the surface of the object, (ii) a layer of luminescent material disposed in the recess, wherein the luminescent material emits electromagnetic radiation having a detectable optical characteristic that is functionally dependent on the temperature of the object in response to a source of excitation radiation, and (iii) an optical window that seals said layer of luminescent material in the recess in the surface of the object, is provided.

Abstract: A temperature sensor that has a thermally conducting contact with a surface that emits electromagnetic radiation in proportion to the temperature of the contact is disclosed. The sensor has a resilient member attached to the contact and configured to extend the contact toward the object to be measured. A first light waveguide is attached to the contact and is configured to transmit the electromagnetic radiation from the contact. The sensor has a guide with a bore formed therein that the first waveguide is insertable into. When the contact is moved, the first waveguide moves within the bore. A second waveguide is attached to the guide such that a variable gap is formed between the ends of the first waveguide and the second waveguide. Electromagnetic energy from the first waveguide traverses the gap and can be transmitted by the second waveguide. The guide allows the first waveguide to move with the contact in order to ensure that the contact is fully engaged with the surface of the object.

Abstract: A characteristic of a surface is measured by illuminating the surface with optical radiation over a wide angle and receiving radiation reflected from the surface over an angle that depends on the extend of the illumination angle. An emissivity measurement is made for the surface, and, alternatively, if a reflectivity measurement is made, it becomes more accurate. One application is to measure the thickness of a layer or layers, either a layer made of transparent material or a metal layer. A one or multiple wavelength technique allow very precise measurements of layer thickness. Noise from ambient radiation is minimized by modulating the radiation source at a frequency where such noise is a minimum or non-existent. The measurements may be made during processing of the surface in order to allow precise control of processing semiconductor wafers, flat panel displays, or other articles. A principal application is in situ monitoring of film thickness reduction by chemical-mechanical-polishing (CMP).

Abstract: A characteristic of a surface is measured by illuminating the surface with optical radiation over a wide angle and receiving radiation reflected from the surface over an angle that depends on the extend of the illumination angle. An emissivity measurement is made for the surface, and, alternatively, if a reflectivity measurement is made, it becomes more accurate. One application is to measure the thickness of a layer or layers, either a layer made of transparent material or a metal layer. A one or multiple wavelength technique allow very precise measurements of layer thickness. Noise from ambient radiation is minimized by modulating the radiation source at a frequency where such noise is a minimum or non-existent. The measurements may be made during processing of the surface in order to allow precise control of processing semiconductor wafers, flat panel displays, or other articles. A principal application is in situ monitoring of film thickness reduction by chemical-mechanical-polishing (CMP).

Abstract: A characteristic of a surface is measured by illuminating the surface with optical radiation over a wide angle and receiving radiation reflected from the surface over an angle that depends on the extend of the illumination angle. An emissivity measurement is made for the surface, and, alternatively, if a reflectivity measurement is made, it becomes more accurate. One application is to measure the thickness of a layer or layers, either a layer made of transparent material or a metal layer. A one or multiple wavelength technique allow very precise measurements of layer thickness. Noise from ambient radiation is minimized by modulating the radiation source at a frequency where such noise is a minimum or non-existent. The measurements may be made during processing of the surface in order to allow precise control of processing semiconductor wafers, flat panel displays, or other articles. A principal application is in situ monitoring of film thickness reduction by chemical-mechanical-polishing (CMP).

Abstract: A temperature sensor that has a thermally conducting contact with a surface that emits electromagnetic radiation in proportion to the temperature of the contact is disclosed. The sensor has a resilient member attached to the contact and configured to extend the contact toward the object to be measured. A first light waveguide is attached to the contact and is configured to transmit the electromagnetic radiation from the contact. The sensor has a guide with a bore formed therein that the first waveguide is insertable into. When the contact is moved, the first waveguide moves within the bore. A second waveguide is attached to the guide such that a variable gap is formed between the ends of the first waveguide and the second waveguide. Electromagnetic energy from the first waveguide traverses the gap and can be transmitted by the second waveguide. The guide allows the first waveguide to move with the contact in order to ensure that the contact is fully engaged with the surface of the object.

Abstract: A characteristic of a surface is measured by illuminating the surface with optical radiation over a wide angle and receiving radiation reflected from the surface over an angle that depends on the extend of the illumination angle. An emissivity measurement is made for the surface, and, alternatively, if a reflectivity measurement is made, it becomes more accurate. One application is to measure the thickness of a layer or layers, either a layer made of transparent material or a metal layer. A one or multiple wavelength technique allow very precise measurements of layer thickness. Noise from ambient radiation is minimized by modulating the radiation source at a frequency where such noise is a minimum or non-existent. The measurements may be made during processing of the surface in order to allow precise control of processing semiconductor wafers, flat panel displays, or other articles. A principal application is in situ monitoring of film thickness reduction by chemical-mechanical-polishing (CMP).

Abstract: A temperature sensor utilizing optical temperature measuring techniques is constructed to make firm contact with a surface whose temperature is being measured, an example application being the monitoring of semiconductor wafers or flat panel displays while being processed. A cap is mounted near but spaced apart from an end of a lightwave guide, with a resilient element that applies force of the cap against a surface whose temperature is being measured as the cap is urged toward the optical fiber end. An optical temperature sensing element, such as luminescent material or a surface of known emissivity, is carried within the cap. A bellows with a closed end conveniently serves as both the cap and the resilient element. An alternative temperature measuring device installs an optical temperature sensing material within a test substrate behind an optical window, and then views the sensing material through the window.

Abstract: A characteristic of a surface is measured by illuminating the surface with optical radiation over a wide angle and receiving radiation reflected from the surface over a wide angle. An emissivity measurement can then be made for the surface, and, alternatively, if a reflectivity measurement is made, it becomes more accurate. One application is to measure the thickness of a layer or layers, either a layer made of transparent material or a metal layer. A one or multiple wavelength technique allow very precise measurements of layer thickness. Noise from ambient radiation is minimized by modulating the radiation source at a frequency where such noise is a minimum or non-existent. The measurements may be made during processing of the surface in order to allow precise control of processing semiconductor wafers, flat panel displays, or other articles. A principal application is in situ monitoring of film thickness reduction by chemical-mechanical-polishing (CMP).

Abstract: In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate an any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates, and similar articles. Planarization and polishing processes are alternately monitored by monitoring temperature.

Abstract: A semiconductor process endpoint detection system uses a relatively wide wavelength range of light to reflect off a semiconductor wafer being processed. Relatively narrow wavelength ranges can be monitored within this wide reflected wavelength range in order to produce an endpoint of the process. An indication can be produced which is a function of detected light intensities at multiple wavelength ranges. These indications aid in the determination of an endpoint of a process.

Abstract: An instrument for determining spectral content of an input light. The instrument has a rotating optical element that separates an input light into two partial beams and thereby introduces a variable OPD between the partial beams. The instrument then records an interferogram as a function of the variable OPD and thereby Fourier or Fast Fourier transforms the interferogram into a spectrogram so that the spectral content of the input light is revealed.

Abstract: In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate and any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates, and similar articles. Planarization and polishing processes are alternatively monitored by monitoring temperature.

Abstract: In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate and any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates, and similar articles. Planarization and polishing processes are alternatively monitored by monitoring temperature.

Abstract: The deposition material on, or removal of material from, an article, such as on an exposed surface of an intermediate integrated circuit structure, is optically monitored. The processes that are so monitored include the formation of a dielectric layer on a semiconductor wafer, and the removal of material from such a layer by planarization, polishing, or etching, a process of chemical-mechanical-polishing (CMP) being given as an example. A resulting optical signal is detected and processed in real time to provide information of the progress of the material formation or removal and an indication when an end point has been reached. The optical signal being processed varies sinusoidally as a result of interference between light reflected from a surface being operated upon and light reflected from some other surface. A differential or integral of this signal is formed to provide additional peaks and valleys that are detected in order to obtain data points from the signal every one-quarter period.

Abstract: In an apparatus for removing material from an article, such as an exposed surface of an intermediate integrated circuit structure, by planarizing, polishing, etching or the like, a sensor is mechanically coupled to a moving carrier of the article for directing through the article to its first side an electromagnetic radiation beam having a wavelength band to which the structure is substantially transparent. The beam is detected after interacting with the article, such as being reflected from its exposed surface, and resulting information of the state of the processing of the exposed surface is transmitted from the moving carrier to a stationary receiver by radiation without the use of any physical transmission media such as wires or optical fibers. Multiple sensors mounted on the moving article carrier provide information of the uniformity of the processing across the exposed article surface.

Abstract: An improved method for minimizing interferences from random noise and correlated fluctuations which obscure electrical signals converted from optical emissions. In particular, an improved method for the removal of interferences from optical emission signals during endpoint determination in dry etching processes for the fabrication of micro-electronic devices which derives information in the presence of random noise, correlated fluctuations and periodic modulations of the plasma by maximizing the signal to random noise ratio and minimizing the obscuring effects of correlated fluctuation.

Abstract: An automatic gain control technique integrates samples of an incoming analog signal a controlled amount of time so that the magnitudes of the samples lie within the desired input window of an analog-to-digital converter or other signal processing device. The values of the samples are then determined from a combination of the output of the signal processing device and their integration time. This is utilized in a system for determining the temperature of a surface of an object, without contacting the surface, by measuring the level of its infra-red radiation emission. A particular application of the system is to measure the temperature of a semiconductor wafer within a processing chamber while forming integrated circuits on it. The measuring system is configured on a single printed circuit board with an extra height metal heat sink structure to which a cooling unit is mounted.

Abstract: In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate and any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates, and similar articles. Planarization and polishing processes are alternatively monitored by monitoring temperature.

Abstract: An improved method for minimizing interferences from random noise and correlated fluctuations which obscure electrical signals converted from optical emissions. In particular, an improved method for the removal of interferences from optical emission signals during endpoint determination in dry etching processes for the fabrication of micro-electronic devices which derives information in the presence of random noise, correlated fluctuations and periodic modulations of the plasma by maximizing the signal to random noise ratio and minimizing the obscuring effects of correlated fluctuation.