Abstract: An electromagnetic radiation detection system includes a detection circuit detecting an electromagnetic radiation and supplying a representative electrical signal. A cold table supports the detection circuit. A thermally insulating support supports the cold table. It includes an enclosure defining a closed volume and provided with a bottom, a top and a side wall connecting the bottom and the top. The thermally insulating support mechanically connects the cold table with the bottom of the enclosure. A cooler is mechanically connected to the enclosure and configured to cool the detection circuit. The cooler is mechanically fastened onto the side wall of the enclosure and thermally connected to the detection circuit by means of a thermal connector connecting the cooler and the cold table and the cold shield.

Abstract: A substrate to fabricate a photodiode structure has a top layer made from cadmium-doped semiconductor material. A first HgCdTe-base layer is formed by liquid phase epitaxy from the top layer with a bath containing an n-type electrically active dopant to electrically dope the first layer. The cadmium diffuses from the top layer to the first layer to form a decreasing cadmium concentration gradient from the interface with the top layer in a direction away from the interface. The cadmium concentration gradient causes a decreasing band gap width gradient in the first layer from the interface and causes an n-type dopant concentration gradient in the first layer from the interface.

Abstract: A generator of phases of a detector integrates at least one elementary machine for interpreting a microcode stored in a register. Each elementary machine includes at least one control input having a logic level change detector. Each elementary machine also includes at least one phase output having a controlled switch, enabling to define the logic level of the phase output, and a controlled inverter enabling to toggle the logic level of the phase output. Further, each elementary machine includes at least one clock signal associated with a counter, and a unit for loading the instructions and the arguments stored in the register, the instructions being coded over 3 bits.

Abstract: The present disclosure relates to a method of removing, by an imaging processing device, remanence artifacts from an image (fn) of a sequence of images captured by an infrared imaging device, the method comprising: generating a remanence measure for at least some pixels in the image (fn) based on a difference between the pixels values of the image (fn) and the pixel values a previous image (fn?1) of the sequence; and removing remanence artifacts from at least some pixels of the image (fn) based on a remanence estimation for each of the at least some pixels, each remanence estimation being generated based on the remanence measure and on one or more previous remanence estimations of the at least some pixels and on a model of the exponential decay of the remanence.

Abstract: The present disclosure relates to a method of removing, by an imaging processing device, remanence artifacts from an image (fn) of a sequence of images captured by an infrared imaging device, the method comprising: inpainting a zone of remanence in the image (fn) to generate an inpainted image; generating a remanence measure for at least some pixels in the image (fn) based on the inpainted image; and removing remanence artifacts from at least some pixels of the image (fn) based on a remanence estimation for each of the at least some pixels, each remanence estimation being generated based on the remanence measures of a plurality of the images in the sequence.

Abstract: A device of integration of an electric current received on an integration node, includes an operational amplifier, an integration capacitor, and a circuit for modifying an output voltage of the operational amplifier formed by a charge transfer circuit configured to be connected on the integration node and to transfer charges into the integration capacitor. The device also includes a comparison circuit configured to trigger the modification circuit at least once during the integration duration, and a storage circuit configured to store the number of triggerings which have occurred during the integration duration. The received electric current is calculated according to the output voltage as well as to the number of triggerings multiplied by the modification of the output voltage induced by the modification circuit.

Abstract: A detection device includes an absorbent first stack configured to absorb an electromagnetic radiation in at least a first wavelength range and presenting a first thermal expansion coefficient. It also includes a second stack forming an optical function and presenting a second thermal expansion coefficient. The first thermal expansion coefficient is different from the second thermal expansion coefficient and the detection device further includes a buffer layer separating the first stack and the second stack. The buffer layer presents a thickness included between 0.5 ?m and 50 ?m so as to absorb the mechanical stresses induced by the first stack.

Abstract: An infrared camera includes a housing containing a pixel array. The pixel array includes: image pixels forming an image sensor arranged to receive infrared light from an image scene; and a plurality of parasitic heat sensing pixels arranged to receive infrared light from different portions of an interior surface of the housing.

Abstract: An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

Abstract: A method of manufacturing a microelectromechanical system includes forming of an electromechanical element on a substrate. The method further includes preparation of an encapsulation package to form a sealed cavity integrating the electromechanical element, with the sealed cavity having a volume smaller than 10 mm3. The method includes physical vapor deposition of a getter film on the substrate or on a wall of the encapsulation package so that the getter film has a specific absorption surface area smaller than 8 m2/g, and sealing of the encapsulation package on the substrate by means of a thermal sealing cycle having a temperature enabling to activate said getter film.

Abstract: An infrared sensor includes an assembly of pixels juxtaposed in rows and in columns, each pixel integrating an imaging microbolometer and an integrator assembly. The integrator assembly includes a transistor assembled as an amplifier, and a capacitor assembled in feedback on the transistor between an output node and an integration node. The integration node is connected to a skimming transistor operating as a current mirror with a skimming control transistor offset outside of the pixel. A skimming current flowing through the skimming control transistor is controlled according to the temperature of at least one thermalized microbolometer. The current mirror assembly enables to transmit the skimming current flowing through said skimming control transistor onto the integration node so that the capacitor integrates the difference between a current flowing through the imaging microbolometer and the skimming current.

Abstract: A method of calibrating an infrared (IR) camera including a pixel array housed in a housing, the pixel array having an image sensor and one or more parasitic heat sensing pixels arranged to receive infrared light from different portions of an interior surface of the housing, the method including: receiving, by a processing device, one or more readings from each of the parasitic heat sensing pixels and from each pixel of the pixel array; and generating, by the processing device based on the one or more readings, one or more conversion matrices for converting readings from the parasitic heat sensing pixels into pixel correction values for performing 2D signal correction of the image.

Abstract: A process for producing a microbolometer including a vanadium-oxide-based sensitive material containing an additional chemical element chosen from arsenic, germanium, silicon and phosphorus, the process including: determining an effective amount of the additional chemical element from which the modified compound, having undergone a step of exposure to a temperature Tr for a time ?tr, exhibits an electrical resistivity ?a|r at room temperature that is higher than 10% of its native value; producing the sensitive material in a thin layer, this material being formed from the modified compound having an amount of the additional chemical element that is greater than or equal to the effective amount; and exposing the sensitive material to the temperature Tr for the time ?tr.

Abstract: A method of manufacturing an infrared detector includes the steps of: hybrid bonding of a detection chip to a second chip; said hybrid bonding step being carried out by adhesion of contacts and of insulator layers of the two chips; removal of a substrate of said detection chip to reach a deep oxide layer; forming of conductive pads through said deep oxide layer to reach transistors present in a semiconductor layer; and forming of microbolometers suspended over said deep oxide layer and electrically connected to the conductive pads.

Abstract: A hermetic housing is disclosed (10a) for an optoelectronic component (11) or a MEMS device configured to form an enclosure (12) within which a low pressure or vacuum prevails. The hermetic housing includes: an optical window (14) transparent for at least one wavelength of interest (?); and a layer of a getter material (15a) configured to capture gases present in said enclosure and deposited on the optical window opposite the enclosure. This layer of getter material has a thickness (e_t), greater than 60 nanometers, and a porosity (P) in the range from 10 to 70% to satisfy the following relation: (1?P)*e_t<?/2?k with ? corresponding to the at least one wavelength of interest, and k corresponding to the extinction coefficient of the material of the layer of getter material for the at least one wavelength of interest of the optical window.

Abstract: The detection device includes first and second photodetectors each sensitive to two different wavelength ranges. The detection device comprises a first filter configured to allow the first wavelength range to pass and to block the second wavelength range. The first filter covers the first photodetector and leaves the second photodetector uncovered. The detection device comprises a second filter located at a distance from the first and second photodetectors and at a distance from the first filter. The second filter is configured to allow the first and the second wavelength ranges to pass. A processing circuit is configured to receive electric signals coming from the first and second photodetectors and to provide data relative to the radiation of the second wavelength range by comparing the first signal with the second signal.

Abstract: A first input receiving a voltage to be sampled formed by a terminal of a sampling capacitor. An amplifier has a first input connected to another terminal of the sampling capacitor and a second input connected to a reference voltage. The amplifier is supplied by a power supply configured to deliver a reduced current and to supply the amplifier in a first condition during a first period, deliver a rated current and to supply the amplifier in a second condition during a second period, the reduced current being lower than the rated current. During the first period, the first and second inputs of the amplifier are short-circuited.

Abstract: A detection device includes an absorbent first stack configured to absorb an electromagnetic radiation in at least a first wavelength range and presenting a first thermal expansion coefficient. It also includes a second stack forming an optical function and presenting a second thermal expansion coefficient. The first thermal expansion coefficient is different from the second thermal expansion coefficient and the detection device further includes a buffer layer separating the first stack and the second stack. The buffer layer presents a thickness included between 0.5 ?m and 50 ?m so as to absorb the mechanical stresses induced by the first stack.

Abstract: A first input receiving a voltage to be sampled formed by a terminal of a sampling capacitor. An amplifier has a first input connected to another terminal of the sampling capacitor and a second input connected to a reference voltage. The amplifier is supplied by a power supply configured to deliver a reduced current and to supply the amplifier in a first condition during a first period, deliver a rated current and to supply the amplifier in a second condition during a second period, the reduced current being lower than the rated current. During the first period, the first and second inputs of the amplifier are short-circuited.

Abstract: An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.