Abstract: The present invention provides a method for manufacturing a water-repellent film, including an adhesion precursor film forming step of forming, on a substrate, an adhesion precursor film mainly of a Si—O bond with hydrogen directly bonded to Si; an irradiating step of irradiating the adhesion precursor film with excitation energy to increase an OH group present on a surface of the adhesion precursor film to thereby change the adhesion precursor film into an adhesion reinforcing film; and an organic film coating step of coating the adhesion reinforcing film with an organic film by using a silane coupling agent, wherein a content of the hydrogen directly bonded to Si in the adhesion precursor film is 1.0×1017 atoms/cm2 or more in terms of a H2 molecule.
Type:
Grant
Filed:
July 6, 2015
Date of Patent:
January 26, 2016
Assignees:
FUJIFILM Corporation, Material Design Factory Co., Ltd.
Abstract: The present invention provides a method for manufacturing a water-repellent film, including an adhesion precursor film forming step of forming, on a substrate, an adhesion precursor film mainly of a Si—O bond with hydrogen directly bonded to Si; an irradiating step of irradiating the adhesion precursor film with excitation energy to increase an OH group present on a surface of the adhesion precursor film to thereby change the adhesion precursor film into an adhesion reinforcing film; and an organic film coating step of coating the adhesion reinforcing film with an organic film by using a silane coupling agent, wherein a content of the hydrogen directly bonded to Si in the adhesion precursor film is 1.0×1017 atoms/cm2 or more in terms of a H2 molecule.
Type:
Application
Filed:
July 6, 2015
Publication date:
October 29, 2015
Applicants:
FUJIFILM Corporation, Material Design Factory Co., Ltd.
Abstract: A gas barrier film in which a gas barrier layer deposited by catalyst CVD in contact with each of both main surfaces of a plastic film is an SiCNFH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07, 0.04<I(NH)/I(SiN)<0.08, and 0.05<I(CF)/I(SiN)<0.3; an SiOCNH layer satisfying conditions of 0.1<I(SiH)/I(NH)<0.9, 0.0<I(CH)/I(NH)<0.3, 8<I(SiN)/I(NH)<20, and 2<I(SiO2)/I(NH)<8; or an SiCNH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07 and 0.04<I(NH)/I(SiN)<0.08. Here, the “I” represents peak intensity of Fourier transform infrared spectroscopy related to an atomic bond shown in the parentheses after the “I”.
Type:
Grant
Filed:
March 23, 2010
Date of Patent:
October 28, 2014
Assignees:
Material Design Factory Co., Ltd., Air Water Inc.
Abstract: A gas barrier film in which a gas barrier layer deposited by catalyst CVD in contact with each of both main surfaces of a plastic film is an SiCNFH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07, 0.04<I(NH)/I(SiN)<0.08, and 0.05<I(CF)/I(SiN)<0.3; an SiOCNH layer satisfying conditions of 0.1<I(SiH)/I(NH)<0.9, 0.0<I(CH)/I(NH)<0.3, 8<I(SiN)/I(NH)<20, and 2<I(SiO2)/I(NH)<8; or an SiCNH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07 and 0.04<I(NH)/I(SiN)<0.08. Here, the “I” represents peak intensity of Fourier transform infrared spectroscopy related to an atomic bond shown in the parentheses after the “I”.
Type:
Application
Filed:
March 23, 2010
Publication date:
January 12, 2012
Applicants:
AIR WATER INC., MATERIAL DESIGN FACTORY CO., LTD.