Abstract: A non-aqueous electrolyte secondary battery, comprises positive and negative electrode plates, each comprising a current collector and a material mixture layer carried on each face thereof. A total thickness of the positive electrode material mixture layers on both faces of the current collector is 40 ?m to 100 ?m. The positive electrode plate has an electrode area of 520 cm2 to 800 cm2 per battery capacity of 1 Ah. The negative electrode material mixture layer comprises a graphitizable carbon material. A wide-range X-ray diffraction pattern of the graphitizable carbon material has a peak PX (101) attributed to a (101) crystal face at about 2?=44 degrees, and a peak PX (100) attributed to a (100) crystal face at about 2?=42 degrees. A ratio of an intensity IX (101) of PX (101) to an intensity IX (100) of PX(100) satisfies: 0<IX (101)/IX (100)<1.

Abstract: A non-aqueous electrolyte secondary battery, comprises positive and negative electrode plates, each comprising a current collector and a material mixture layer carried on each face thereof. A total thickness of the positive electrode material mixture layers on both faces of the current collector is 40 &mgr;m to 100 &mgr;m. The positive electrode plate has an electrode area of 520 cm2 to 800 cm2 per battery capacity of 1 Ah. The negative electrode material mixture layer comprises a graphitizable carbon material. A wide-range X-ray diffraction pattern of the graphitizable carbon material has a peak PX (101) attributed to a (101) crystal face at about 2&thgr;=44 degrees, and a peak PX (100) attributed to a (100) crystal face at about 2&thgr;=42 degrees. A ratio of an intensity IX (101) of PX (101) to an intensity IX (100) of PX(100) satisfies: 0<IX (101)/IX (100)<1.

Abstract: A battery power source device is provided for supplying high electric power used for a drive power source for a vehicle. The battery power source device includes a battery box for storing a plurality of batteries arranged in a connected state in a battery storage room, an inlet opening for introducing a temperature control medium into the battery storage room, an outlet opening for discharging the medium from the battery storage room to the outside, a medium circulation passage for leading the medium discharged from the outlet opening to the inlet opening for feeding into the battery storage room again, and a medium transport device for forcing the medium flow.

Abstract: The present invention relates to a method of manufacturing a compound semiconductor thin film by the thermal decomposition of a metal organic compound and a solar cell using the above thin film. An organic solvent solution of the metal organic compound containing at least one metal-sulfur bond is pulverized into fine particles by an ultrasonic vibration method or by a spray injection method and the obtained fine particles or gaseous metal organic compound are thermally decomposed by contacting them on the heated surface of a thin film forming substrate and thus a compound semiconductor metal sulfide thin film is formed on the thin film forming substrate. With this method, a compound semiconductor thin film of large surface area with uniform quality can be manufactured at low manufacturing cost with good reproducibility. These metal sulfide thin films are of high purity, high density and high quality and thus can be used for various photo-electronic devices.

Abstract: A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coating film which contains the material for the semiconductor on the surface of the supporting member; a step of closely arranging the supporting member and a substrate on which a CdTe film is to be formed, to make the coating film to face the surface of the substrate; and a step of forming a CdTe film on the substrate, by heating the coating film and the substrate, and causing the material for the semiconductor in the coating film to evaporate.

Abstract: A semiconductor layer for photoelectric transfer device for forming a p-n junction, which has large surface area and uniform film pressure, is formed in the atmosphere under normal pressure for several minutes. The semiconductor layer for forming a p-n junction is composed of a compound semiconductor of a Group II element(selected from the group consisting of Cd, Zn and Hg)-Group VI element(selected from the group consisting of S and Te). A semiconductor layer having a p or n conductive type is formed on a substrate by pyrolytically decomposing an organometallic compound containing a II-VI group atom bond. A semiconductor film is formed on the surface of a substrate by dispersing or dissolving an organometallic compound in a solvent to form a solution, applying ink on the surface of the substrate using a suitable printing method and subjecting to a heat treatment.