Patents Assigned to Matsushita Electric Industria, Co., Ltd.
  • Patent number: 6331804
    Abstract: In a cascade amplifier, the collector of a first transistor with a grounded emitter and the emitter of a second transistor are connected. A third transistor has the base grounded at radio frequency, the emitter connected to the base of the first transistor, and the collector connected to the collector of the second transistor. A fourth transistor connected to the emitter of the third transistor works as a constant current source. A bias changeover circuit supplies base biases of these transisiors. In this constitution, by using the bias changeover circuit for changing over the bias depending on the cut-off condition of the first transistor, the gain is changed over by making either the cascade amplifier or the third transistor operate.
    Type: Grant
    Filed: January 19, 2000
    Date of Patent: December 18, 2001
    Assignee: Matsushita Electric Industria, Co., Ltd.
    Inventors: Yoshito Shimizu, Noriaki Saito, Hiroyuki Yabuki
  • Publication number: 20010045841
    Abstract: A semiconductor integrated circuit is provided in which a negative voltage generation circuit capable of supplying a memory cell transistor substrate with a stable negative voltage, independently of the fluctuation of a power source voltage or environmental conditions and the process conditions etc., is realized easily, and in which the data holding time of a memory can be secured sufficiently, and the power consumption is reduced.
    Type: Application
    Filed: May 10, 2001
    Publication date: November 29, 2001
    Applicant: Matsushita Electric Industria Co., Ltd.
    Inventors: Masataka Kondo, Kiyoto Ohta, Tomonori Fujimoto