Abstract: A superhigh speed vertical transistor having an ultra thin base, a vertical NPN transistor having a reverse direction structure for composing an IIL, and a lateral PNP transistor similarly composing an IIL to be an injector are formed on a P-type silicon substrate 1 by self-aligned and integrated. The emitter leading-out part opening of the superhigh speed vertical NPN transistor and the collector leading-out part opening of the vertical NPN transistor having a reverse direction structure are self-aligned to the base leading-out electrode. In the epitaxial layer, the P-type intrinsic base layer of superhigh speed vertical NPN transistor is formed by impurity diffusion from the emitter leading-out electrode formed of polysilicon film, and the P-type base layer of the vertical NPN transistor having a reverse direction structure is formed by ion implantation.

Abstract: A solid-state image pickup device, and in particular, a CCD image sensor is capable of color reading, wherein n lines (n.gtoreq.2) of photo diodes disposing a plurality of photodiodes straightly are disposed parallel adjacently to each other, and adjacent n lines of CCD analog shift registers are disposed parallel to the photodiode lines at one side of the group of n lines of photodiodes, and the signal charges are transferred through a gate structure composed of MOS structure, between adjacent lines of n lines of photodiodes and n lines of CCD analog shift registers. It is therefore possible to reduce the intervals of the photodiode lines to the limit, thereby realizing a CCD color linear image sensor capable of outstandingly simplifying the signal time axis correction circuit such as semiconductor digital memory device for correcting the differences of reading positions of the photodiode lines.

Abstract: This invention relates to a method and apparatus to continuously manufacture red lead which is a primary material used to produce storage batteries, anticorrosion paint, glass, etc. In this method, lead monoxide and metal lead powder are continuously supplied from an inlet of a rotating inner cylinder which acts as a reaction chamber of a rotary kiln. The powder mixture proceeds toward the outlet of the kiln while it is oxidized into red lead. The yield of red lead, and the stable oxidation of raw material into red lead, can be accomplished by returning a part of the product powder available at the outlet to the inlet of the kiln.

Abstract: A piezoelectric ceramic comprising at least two kinds of ceramic domains that are different from each other either in composition or in piezoelectric characteristics. It is made possible to produce a piezoelectric ceramic with better piezoelectric characteristics than that composed of a single kind of ceramic domain by having the compositions or the piezoelectric characteristics of each ceramic domain properly selected. For example, it is possible to obtain a piezoelectric ceramic of an extremely small rate of change in resonance frequency in response to a change in temperature by having a ceramic domain with a positive rate of change in resonance frequency in response to a change in temperature and the one with a negative rate of change in resonance frequency in response to a change in temperature combined.