Abstract: Each of plural semiconductor integrated circuits existing on a semiconductor wafer is provided with a function circuit (3), plural pads (4), and wirings (8) which are electrically connected to the pads (4) and contact bumps of a probe card (7), wherein at least two wirings (8a) and (8b) simultaneously contact one bump (6) in an area other than a bump area, without being in touch with each other, whereby wafer level burn-in is executed. Thereby, even when the chip area is reduced, wafer level burn-in can be carried out.

Abstract: After phosphorus is ion implanted into a portion of a polysilicon film, first RTA is performed. After boron is ion implanted into another portion of the polysilicon film, the polysilicon film is patterned to form a gate electrode and a resistor film. A TEOS film is deposited and patterned to form a silicidation mask having an opening corresponding to a silicidation region. Thereafter, annealing for activating boron is performed in an atmosphere containing oxygen, thereby forming oxide films on a gate electrode and on heavily doped source/drain regions in the silicidation region. The oxide films suppress out-diffusion of the impurities and inhibit the impurity ions from penetrating the gate electrode 8 during ion implantation for promoting silicidation, which is performed subsequently.