Abstract: A novel mannanase. A polypeptide having a specific amino acid sequence such as the amino acid represented by SEQ ID NO:2 exhibits a mannanase activity. Although this mannanase does not have homology with known mannanase at the amino acid level, the polypeptide has a mannanase activity as well as heat resistance.

Abstract: A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.

Abstract: Providing improved wear resistance to a metal material by hardening a surface layer and a surface layer hardening method. A base material is nitrided so that a metal material (40) has a surface layer hardened. The surface layer of the base material is formed with no nitrogen compound layer (40C), and the base material includes a region from a surface thereof to a depth of 78 ?m, the region having a Vickers hardness higher than the base material by not less than 5%.

Abstract: Disclosed herein are a method and a kit using a novel marker associated with depression. The marker for depression includes one or more selected from a noradrenaline transporter and a dopamine transporter. The method for determining depression includes a step of examining an expression level of the marker for depression in a blood sample collected from a subject.

Abstract: Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.

Abstract: A nitride semiconductor light emitting device includes a substrate as a base and an n-type semiconductor layer grown on a surface side of the substrate. Antimony (Sb) is added to the n-type semiconductor layer so that a molar fraction is not less than 0.1% and is less than 1%. A concentration of an n-type impurity in the n-type semiconductor layer is lower than an electron concentration.

Abstract: [Problem] To provide: a method for utilizing a novel marker, including a method for determining depression; and a kit for analyzing an ubiquitinated serotonin transporter. [Solution] A method for determining depression, comprising a step of analyzing the proportion of an ubiquitinated serotonin transporter in a blood sample collected from a subject; and a kit for analyzing an ubiquitinated serotonin transporter in blood, which comprises an ubiquitinated protein collector material and an anti-serotonin transporter antibody and is used for the analysis of the proportion of an ubiquitinated serotonin transporter in a collected blood sample.

Abstract: Providing a stent which can easily be indwelled in a blood vessel in a state such that a catheter can be projected toward an inside of aneurysm. The stent is a stent for use in medical treatment of an aneurysm (1) and includes a cylindrical stent body (10) provided on a peripheral wall and having a plurality of insertion portions (11) through each of which a catheter (7) is insertable and a plurality of valving elements (20) provided in the insertion portions (11) respectively. Each valving element (20) is opened when the catheter (7) is inserted through one of the insertion portions (11). Each valving element (20) is closed when the catheter (7) is pulled out of the insertion portion (11). This suppresses an outflow into a blood vessel of a coil (9) placed in the aneurysm (1).

Abstract: A recess, which has a bottom, is formed in at least one of a contact surface of a rotor and a contact surface of an armature. A solid material, which is made of thermoset resin that contains powder of metal oxide or metal dispersed in the thermoset resin, is formed in an inside of the recess.

Abstract: This application provides a method of manufacturing an n-p-n nitride-semiconductor light-emitting device which includes a current confinement region(A) using a buried tunnel junction layer and in which a favorable luminous efficacy can be obtained and to provide the n-p-n nitride-semiconductor light-emitting device. The p-type activation of a p-type GaN crystal layer stacked below a tunnel junction layer is performed in an intermediate phase of a manufacturing process in which the p-type GaN crystal layer is exposed to atmosphere gas with the tunnel junction layer partially removed, before the tunnel junction layer is buried in an n-type GaN crystal layer . In the intermediate phase of the manufacturing process in which the p-type GaN crystal layer is exposed, p-type activation is efficiently performed on the p-type GaN crystal layer , and a p-type GaN crystal layer with low electric resistance can be obtained.

Abstract: A nitride semiconductor light emitting device includes a substrate as a base and an n-type semiconductor layer grown on a surface side of the substrate. In the device, antimony (Sb) is added to the n-type semiconductor layer so that a molar fraction is not less than 0.1%. The n-type semiconductor layer has an electron concentration of not less than 1×1018 cm?3.

Abstract: An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains Al and has a polar or semipolar surface either serving as a growth face. The device includes an active layer (103), and first and second composition-graded layers (102, 104). The active layer (103) is interposed between the first and second composition-graded layers (102, 104). Each one of the first and second composition-graded layers is composition-graded so that an Al composition value is rendered smaller as each one of the first and second composition-graded layers (102, 104) comes close to a side where a sum of spontaneous polarization and piezoelectric polarization is negative.

Abstract: A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.

Abstract: [Problem] To provide: a method for utilizing a novel marker, including a method for determining depression; and a kit for analyzing an ubiquitinated serotonin transporter. [Solution] A method for determining depression, comprising a step of analyzing the proportion of an ubiquitinated serotonin transporter in a blood sample collected from a subject; and a kit for analyzing an ubiquitinated serotonin transporter in blood, which comprises an ubiquitinated protein collector material and an anti-serotonin transporter antibody and is used for the analysis of the proportion of an ubiquitinated serotonin transporter in a collected blood sample.

Abstract: An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains Al and has a polar or semipolar surface either serving as a growth face. The device includes an active layer (103), and first and second composition-graded layers (102, 104). The active layer (103) is interposed between the first and second composition-graded layers (102, 104). Each one of the first and second composition-graded layers is composition-graded so that an Al composition value is rendered smaller as each one of the first and second composition-graded layers (102, 104) comes close to a side where a sum of spontaneous polarization and piezoelectric polarization is negative.

Abstract: A sound source detecting system that detects a predetermined sound source on the basis of sounds collected by sound collectors includes: a noise extracting unit that extracts a noise from signals of the collected sounds; and a noise suppressing unit that suppresses a signal component of the noise extracted by the noise extracting unit from the signals of the collected sounds. The sound source detecting unit detects a location of the predetermined sound source, such as an approaching vehicle, using information about the sounds having the signals of which the noise is suppressed.

Abstract: [Problem] To provide: a method for utilizing a novel marker, including a method for determining depression; and a kit for analyzing an ubiquitinated serotonin transporter. [Solution] A method for determining depression, comprising a step of analyzing the proportion of an ubiquitinated serotonin transporter in a blood sample collected from a subject; and a kit for analyzing an ubiquitinated serotonin transporter in blood, which comprises an ubiquitinated protein collector material and an anti-serotonin transporter antibody and is used for the analysis of the proportion of an ubiquitinated serotonin transporter in a collected blood sample.

Abstract: Achieving resistance reduction of a nitride semiconductor multilayer film reflector. In the nitride semiconductor multilayer film reflector, a first semiconductor layer (104) has a higher Al composition than a second semiconductor layer (106). A first composition-graded layer (105) is interposed between the first and second semiconductor layers (104, 106) so as to be located at a group III element face side of the first semiconductor layer (104), the first composition-graded layer (105) being adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer (106). A second composition-graded layer (103) is interposed between the first and second semiconductor layers (104, 106) so as to be located at a nitride face side of the first semiconductor layer (104). The second composition-graded layer (103) is adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer (106).

Abstract: A rectangular substrate 12 composed of c-plane sapphire is prepared. Nickel serving as a catalytic metal is deposited on the entirety of an upper surface of the substrate 12 to form a catalytic metal film 14 (see (a)). The catalytic metal film 14 is patterned by a lithography method into a catalytic metal film 16 having a predetermined shape (see (b)). The temperature of the catalytic metal film 16 is raised to 1000° C. and maintained at 1000° C. for 20 minutes. The temperature of the catalytic metal film 16 is lowered from 1000° C. to 800° C. at a rate of 5° C./min. The temperature of the catalytic metal film 16 is maintained at 800° C. for 15 hours. Thereby, a catalytic metal layer 17 having large grains is provided (see (c)).

Abstract: Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.