Patents Assigned to MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
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Patent number: 11982014Abstract: The present disclosure provides an apparatus for crystal growth. The apparatus may include a furnace chamber a temperature field device placed at least partially into the furnace chamber. The furnace chamber may be a non-closed structure, and the temperature field device may be sealed.Type: GrantFiled: December 7, 2022Date of Patent: May 14, 2024Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu Wang, Weiming Guan, Zhenxing Liang
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Publication number: 20240150928Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.Type: ApplicationFiled: January 14, 2024Publication date: May 9, 2024Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu WANG, Weiming GUAN, Zhenxing LIANG
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Publication number: 20240110307Abstract: The present disclosure provides a method for producing a composite crystal, the method is performed in a multi-chamber growth device, and the multi-chamber growth device includes a plurality of chambers. The method includes conveying and processing at least one substrate between a plurality of chambers and obtaining at least one composite crystal by growing a target crystal through vapor deposition in one of the plurality of chambers, the at least one composite crystal including the at least one substrate and the target crystal.Type: ApplicationFiled: October 6, 2023Publication date: April 4, 2024Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu WANG, Zhenxing LIANG, Min LI, Peng GU
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Patent number: 11926922Abstract: The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.Type: GrantFiled: April 27, 2021Date of Patent: March 12, 2024Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu Wang, Tian Yang, Zhenxing Liang, Min Li
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Publication number: 20240076545Abstract: The present disclosure relates to a method for growing a crystal. The method includes: weighing reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.Type: ApplicationFiled: October 20, 2023Publication date: March 7, 2024Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu WANG, Weiming GUAN, Min LI
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Publication number: 20240052523Abstract: The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.Type: ApplicationFiled: October 25, 2023Publication date: February 15, 2024Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu WANG, Weiming GUAN, Min LI
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Patent number: 11885037Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a filler filled in a space between the first drum and the second drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.Type: GrantFiled: December 8, 2022Date of Patent: January 30, 2024Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu Wang, Weiming Guan, Zhenxing Liang
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Patent number: 11851782Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.Type: GrantFiled: December 7, 2022Date of Patent: December 26, 2023Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu Wang, Weiming Guan, Zhenxing Liang
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Patent number: 11851783Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.Type: GrantFiled: December 7, 2022Date of Patent: December 26, 2023Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu Wang, Weiming Guan, Zhenxing Liang
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Patent number: 11828001Abstract: The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method includes compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, cracking and component deviation of the crystal during a crystal growth process, and without oxygen free vacancy can be solved. The method for growing the crystal has excellent repeatability and crystal performance consistency.Type: GrantFiled: February 26, 2021Date of Patent: November 28, 2023Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu Wang, Weiming Guan, Min Li
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Patent number: 11827826Abstract: The present disclosure relates to a method for growing a crystal. The method includes: weighting reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.Type: GrantFiled: January 13, 2022Date of Patent: November 28, 2023Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu Wang, Weiming Guan, Min Li
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Publication number: 20230295834Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.Type: ApplicationFiled: May 22, 2023Publication date: September 21, 2023Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu WANG, Weiming GUAN, Zhenxing LIANG, Min LI
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Patent number: 11655557Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.Type: GrantFiled: March 29, 2021Date of Patent: May 23, 2023Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu Wang, Weiming Guan, Zhenxing Liang, Min Li
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Publication number: 20230113889Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a filler filled in a space between the first drum and the second drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.Type: ApplicationFiled: December 8, 2022Publication date: April 13, 2023Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu WANG, Weiming GUAN, Zhenxing LIANG
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Publication number: 20230093820Abstract: The present disclosure provides an apparatus for crystal growth. The apparatus may include a furnace chamber a temperature field device placed at least partially into the furnace chamber. The furnace chamber may be a non-closed structure, and the temperature field device may be sealed.Type: ApplicationFiled: December 7, 2022Publication date: March 30, 2023Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu WANG, Weiming GUAN, Zhenxing LIANG
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Publication number: 20230100654Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.Type: ApplicationFiled: December 7, 2022Publication date: March 30, 2023Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu WANG, Weiming GUAN, Zhenxing LIANG
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Publication number: 20230099530Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.Type: ApplicationFiled: December 7, 2022Publication date: March 30, 2023Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu WANG, Weiming GUAN, Zhenxing LIANG
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Patent number: 11572634Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber, wherein a cover plate of the temperature field device includes a first through hole; and a pulling rod component that passes through the first through hole and extends into the temperature field device.Type: GrantFiled: October 22, 2021Date of Patent: February 7, 2023Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu Wang, Weiming Guan, Zhenxing Liang
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Patent number: 11566343Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; and a weighting component configured to determine a weight of a crystal being grown on the pulling rod component.Type: GrantFiled: October 22, 2021Date of Patent: January 31, 2023Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu Wang, Weiming Guan, Zhenxing Liang
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Patent number: 11566341Abstract: The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber; a pulling rod component that extends into the temperature field device; a pulling component configured to drive the pulling rod component to move up and down; and a rotating component configured to drive the pulling rod component to rotate.Type: GrantFiled: October 22, 2021Date of Patent: January 31, 2023Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.Inventors: Yu Wang, Weiming Guan, Zhenxing Liang