Abstract: Method and system for use with a Czochralski crystal growing apparatus. The crystal growing apparatus has a heated crucible for melting solid silicon to form a melt from which the single crystal is pulled. The melt has an upper surface above which unmelted silicon is exposed until melted. A camera generates images of a portion of the interior of the crucible. Each image includes a plurality of pixels and each pixel has a value representative of an optical characteristic of the image. An image processor processes the images as a function of the pixel values to detect edges in the images and groups the detected edges as a function of their locations in the images to define objects in the images. The defined objects each include one or more pixels and at least one of the defined objects is representative of a portion of solid silicon which is visible on the melt surface.

Abstract: A cutting machine includes: groove rollers having guide grooves; wires tensioned by the guide grooves and contacted with a work piece to be cut; and a tank filled with a working fluid and positioned under the wires.

Abstract: Apparatus for dehumidifying air comprising two cooling coils operable in a first mode for circulating coolant at a temperature above 32.degree. F. and below the dew point of the air through one of the coils and for circulating coolant at a temperature below 32.degree. F. through the other, and operable in a second mode wherein the circulation of coolant is reversed. In one version of the apparatus, shown in FIG. 1, air flows continuously in one direction first through one coil and then the other; in another version of the apparatus, shown in FIG. 3, the direction of air flow is also reversed.

Abstract: A horizontal reactor for depositing an epitaxial layer on a semiconductor wafer. The reactor includes a reaction chamber sized and shaped for receiving the semiconductor wafer and a susceptor having an outer edge and a generally planar wafer receiving surface positioned in the reaction chamber for supporting the semiconductor wafer. In addition, the reactor includes a heating array positioned outside the reaction chamber including a plurality of heat lamps and a primary reflector for directing thermal radiation emitted by the heat lamps toward the susceptor to heat the semiconductor wafer and susceptor. Further, the reactor includes a secondary edge reflector having a specular surface positioned beside the heating array for recovering misdirected thermal radiation directed generally to a side of the heating array and away from the susceptor.

Abstract: Apparatus for determining the flatness of a generally circular polishing pad through direct measurement of the pad for use in maintaining the flatness of the pad and the flatness of surfaces of articles polished on the polishing pad of a polisher. The apparatus includes a measuring device, a frame mounting the measuring device being capable of measuring a distance between an upper surface of the polishing pad and a reference plane at plural locations along the polishing pad. The apparatus further includes a controller for controlling the measuring device. The controller is configured to indicate whether the flatness of the pad falls outside a predetermined specification.

Abstract: Apparatus and methods for pulling a semiconductor crystal according to a Czochralski method are disclosed. The apparatus includes a crucible containing a melt, a crystal pulling mechanism which pulls the semiconductor crystal from the melt, a motor coupled to the crucible, and a control circuit for energizing the motor to rotate the crucible at a variable speed. The control circuit may energize the motor to rotate the crucible at a continuously varying acceleration and continuously varying rotational speed while the crystal pulling mechanism is pulling at least a portion of the semiconductor crystal from the melt in the crucible. The control circuit may also energize the motor to rotate the crucible at a rotational speed which monotonically increases and decreases.

Abstract: Apparatus for polishing semiconductor wafers comprises a housing, a mounting apparatus within the housing for wax mounting a first face of a semiconductor wafer to a first face of a polishing block, and a first semiconductor wafer polisher within the housing for polishing a second face of the semiconductor wafer. The second face of the semiconductor wafer is opposite the first face of the semiconductor wafer. A first transfer mechanism is within the housing for delivering the polishing block and semiconductor wafer from the mounting apparatus to adjacent the first semiconductor wafer polisher. A controller controls operation of the mounting apparatus, the first semiconductor wafer polisher, and the first transfer mechanism.