Patents Assigned to mi2-factory GmbH
  • Semiconductor wafer
    Patent number: 11929229
    Abstract: A semiconductor wafer includes a first surface and an implantation area adjacent to the first surface and a certain distance away from the first surface, the implantation area including implanted particles and defects. A defect concentration in the implantation area deviates by less than 5% from a maximum defect concentration in the implantation area.
    Type: Grant
    Filed: May 12, 2023
    Date of Patent: March 12, 2024
    Assignee: MI2-FACTORY GMBH
    Inventors: Florian Krippendorf, Constantin Csato
  • Energy filter element for ion implantation systems for the use in the production of wafers
    Patent number: 11837430
    Abstract: A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.
    Type: Grant
    Filed: October 1, 2021
    Date of Patent: December 5, 2023
    Assignee: MI2-FACTORY GMBH
    Inventors: Florian Krippendorf, Constantin Csato
  • Method and device for implanting ions in wafers
    Patent number: 11705300
    Abstract: A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: July 18, 2023
    Assignee: MI2-FACTORY GMBH
    Inventors: Florian Krippendorf, Constantin Csato
  • ION IMPLANTATION DEVICE COMPRISING ENERGY FILTER AND ADDITIONAL HEATING ELEMENT
    Publication number: 20230197398
    Abstract: An ion implantation device (20) is provided comprising an energy filter (25) with a structured membrane, wherein the energy filter (25) is heated by absorbed energy from the ion beam, and at least one additional heating element (50a-d, 55a-d, 60, 70) for heating the energy filter (25).
    Type: Application
    Filed: May 14, 2021
    Publication date: June 22, 2023
    Applicant: mi2-factory GmbH
    Inventors: Florian KRIPPENDORF, Constantin CSATO
  • ION IMPLANTATION DEVICE WITH ENERGY FILTER HAVING ADDITIONAL THERMAL ENERGY DISSIPATION SURFACE AREA
    Publication number: 20230197404
    Abstract: An ion implantation device (20) comprising an energy filter (25), wherein the energy filter (25) has a thermal energy dissipation surface area, wherein the energy filter (25) comprises a membrane with a first surface and a second surface disposed opposite to the first surface, the first surface being a structured surface.
    Type: Application
    Filed: April 19, 2021
    Publication date: June 22, 2023
    Applicant: mi2-factory GmbH
    Inventors: Florian KRIPPENDORF, Constantin CSATO
  • Energy filter element for ion implantation systems for the use in the production of wafers
    Patent number: 11183358
    Abstract: The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: November 23, 2021
    Assignee: MI2-FACTORY GMBH
    Inventors: Florian Krippendorf, Constantin Csato
  • Method and device for implanting ions in wafers
    Patent number: 11056309
    Abstract: A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: July 6, 2021
    Assignee: MI2-FACTORY GMBH
    Inventors: Florian Krippendorf, Constantin Csato
  • Energy filter element for ion implantation systems for the use in the production of wafers
    Patent number: 10847338
    Abstract: An implantation device, an implantation system and a method. The implantation device comprises a filter frame and a filter held by the filter frame, wherein said filter is designed to be irradiated by an ion beam.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: November 24, 2020
    Assignee: MI2-FACTORY GMBH
    Inventors: Florian Krippendorf, Constantin Csato
  • ENERGY FILTER ELEMENT FOR ION IMPLANTATION SYSTEMS FOR THE USE IN THE PRODUCTION OF WAFERS
    Publication number: 20190122850
    Abstract: An implantation device, an implantation system and a method. The implantation device comprises a filter frame and a filter held by the filter frame, wherein said filter is designed to be irradiated by an ion beam.
    Type: Application
    Filed: April 4, 2017
    Publication date: April 25, 2019
    Applicant: mi2-factory GmbH
    Inventors: Florian KRIPPENDORF, Constantin CSATO