Abstract: Apparatus and method for repairing semiconductor masks and reticles is disclosed, utilizing a focused ion beam system capable of delivering, from a single ion beam column, several different species of focused ion beams, each of which is individually optimized to meet the differing requirements of the major functions to be performed in mask repair. This method allows the mask to be imaged with high resolution and minimum mask damage. Opaque defects are removed by sputter etching at high rates with minimum damage to the mask substrate, and clear defects are filled in at high rates directly from the beam by deposition of a metallic or other substance compatible with the mask materials. A focused ion beam column able to produce precisely focused ion beams is employed and is operated at high energies for imaging and sputter etching, and at low energies for imaging and deposition. A liquid metal alloy source containing suitable atomic species is employed.

Abstract: Apparatus and method for repairing semiconductor masks and reticles is disclosed, utilizing a focused ion beam system capable of delivering, from a single ion beam column, several different species of focused ion beams, each of which is individually optimized to meet the differing requirements of the major functions to be performed in mask repair. This method allows the mask to be imaged with high resolution and minimum mask damage. Opaque defects are removed by sputter etching at high rates with minimum damage to the mask substrate, and clear defects are filled in at high rates directly from the beam by deposition of a metallic or other substance compatible with the mask materials. A focused ion beam column able to produce precisely focused ion beams is employed and is operated at high energies for imaging and sputter etching, and at low energies for imaging and deposition. A liquid metal alloy source containing suitable atomic species is employed.

Abstract: A focused ion beam optical column includes asymmetrical three-element electrostatic upper and lower lenses, a velocity filter, an electrostatic blanker, and an electrostatic octopole deflector for maskless ion implantation, resist exposure, repair of x-ray and photo masks, micromachining, and scanning ion microscopy and microanalysis. A constant and relatively high beam energy is maintained through the mass filter and blanker. The column produces a focused beam over a wide range of final beam voltages, with the particular voltage range determined by the dimensions of three components in the column. A large working distance between the main deflector and target is provided to allow for the insertion of imaging and/or charge neutralization optics.

Abstract: An integrated charge neutralization and imaging system is disclosed. An energy analyzer is mounted directed above a target surface consisting of a 90 degree spherical electrostatic capacitor with variable voltage on both the inner and outer electrodes. Circular apertures are mounted at the entrance and exit of the analyzer to limit the fringing electric fields and define the beam size. An electrostatic lenses is used for focusing the beam from the electron gun into the virtual object plane of the energy analyzer. It is also used to collect secondary electrons or secondary ions leaving the energy analyzer and focused them into the imaging optics. A defector is used for steering the electron beam onto the axis of the lens. This deflector is also used to steer the secondary electrons or secondary ions into the electron/ion detector, or to steer the secondary ions into the SIMS mass filter entrance aperture.

Abstract: A Wien filter for use in charged particle beam systems is disclosed, having two opposed resistive magnetic pole pieces separated from a set of excitation coils by an electrically insulating material. Two opposed electric pole pieces are positioned in orthogonal relationship to and in physical contact with the magnetic pole pieces to form a physical aperture through which the charged particles will pass. The resistivity of the magnetic pole pieces is such that sufficient current will flow through them between the electric pole pieces to establish a uniform electric field over the entire physical aperture.