Patents Assigned to Microsemi Corporation
  • Patent number: 11721600
    Abstract: A method for fabricating a hermetic electronic package includes providing a package body; hermetically coupling a package base plate to the package body; thermally coupling a substrate to the base plate; thermally mounting a semiconductor device to the substrate; bonding at least one high-current input/output (I/O) terminal to the first metalized region of the substrate by a strap terminal that is an integral high current heatsink terminal. A ceramic seal surrounding the at least one high-current I/O terminal is hermetically bonded to an outer surface of the package body. A metal hermetic seal washer surrounding the at least one high-current I/O terminal is hermetically bonded to the ceramic seal and to a portion of the at least one high-current I/O terminal. A lid is seam welded onto the package body.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: August 8, 2023
    Assignee: Microsemi Corporation
    Inventors: Saeed Shafiyan-Rad, Manuel Medeiros, III, David Scott Doiron
  • Publication number: 20210159130
    Abstract: A method for fabricating a hermetic electronic package includes providing a package body; hermetically coupling a package base plate to the package body; thermally coupling a substrate to the base plate; thermally mounting a semiconductor device to the substrate; bonding at least one high-current input/output (I/O) terminal to the first metalized region of the substrate by a strap terminal that is an integral high current heatsink terminal. A ceramic seal surrounding the at least one high-current I/O terminal is hermetically bonded to an outer surface of the package body. A metal hermetic seal washer surrounding the at least one high-current I/O terminal is hermetically bonded to the ceramic seal and to a portion of the at least one high-current I/O terminal. A lid is seam welded onto the package body.
    Type: Application
    Filed: December 21, 2020
    Publication date: May 27, 2021
    Applicant: Microsemi Corporation
    Inventors: Saeed Shafiyan-Rad, Manuel Medeiros, III, David Scott Doiron
  • Patent number: 10921155
    Abstract: An apparatus can include a first planar inductive sensor including two oscillator coils and two sensing coils. The apparatus can also include a second planar inductive sensor independent of the first sensor and also including a pair of oscillator and sensing coils. The apparatus can further include a high frequency alternating current carrier generator configured to inject high frequency alternating current carrier signals into the oscillator coils. The carrier signal for the oscillator coil of the first planar inductive sensor is 180 degrees out of phase with a 2nd oscillator coil of the same planar inductive sensor, and wound in an opposite geometric direction, and the oscillator coils of the other inductive sensor can also be wound similarly The two sensing coils of the first planar inductive sensor can be 90 degrees out of phase with each another, and the sensing coils of the other inductive sensor can also be wound similarly.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: February 16, 2021
    Assignee: Microsemi Corporation
    Inventors: Ganesh Shaga, Bala Sundaram Nauduri
  • Patent number: 10903128
    Abstract: A hermetic high-current electronic package includes a package body and a base plate hermetically coupled to the package body. A semiconductor device is thermally mounted to the base plate and has a high-current output. A high-current input/output (I/O) terminal is bonded to the high-current output of the semiconductor device by a strap terminal that is an integral high current heatsink terminal. The high-current I/O terminal passes through a hole formed in a sidewall of the package body. A ceramic seal surrounds the high-current I/O terminal and has a first surface hermetically bonded to an outer surface of the sidewall of the package body. A metal hermetic seal washer surrounds the high-current I/O terminal and is bonded to a second surface of the ceramic seal and bonded to a portion of the high-current I/O terminal that passes through the metal hermetic seal washer.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: January 26, 2021
    Assignee: Microsemi Corporation
    Inventors: Saeed Shafiyan-Rad, Manuel Medeiros, III, David Scott Doiron
  • Patent number: 10837847
    Abstract: An angular rotation sensor system constituted of: a first target with a member radially extending from, and rotating about a longitudinal axis of the first target; a second target with a member radially extending from, and rotating about a longitudinal axis of the second target; a first receive coil comprising a plurality of loops laid out such that adjacent loops exhibit opposing magnetic polarities responsive to a radio frequency current injected into the transmit coil; a second receive coil comprising a plurality of loops laid out such that adjacent loops exhibit opposing magnetic polarities responsive to a radio frequency current injected into the transmit coil; and an output coupled to each of the first and second receive coils, wherein each of the members is shaped and sized to generally match a shape and size of a pair of loops.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: November 17, 2020
    Assignee: Microsemi Corporation
    Inventor: Kevin Mark Smith, Jr.
  • Patent number: 10819101
    Abstract: An over-current protection apparatus constituted of: a transistor disposed on a substrate; a first thermal sense device arranged to sense a temperature reflective of a junction temperature of the transistor; a second thermal sense device arranged to sense a temperature reflective of a temperature of a casing surrounding the substrate; and a control circuitry, arranged to alternately: responsive to the sensed temperature by the first thermal sense device and the sensed temperature of the second thermal sense device being indicative that the temperature difference between the transistor junction and the substrate casing is greater than a predetermined value, switch off the transistor; and responsive to the sensed temperature by the first thermal sense device and the sensed temperature by the second thermal sense device being indicative that the temperature difference between the transistor junction and the substrate casing is not greater than the predetermined value, switch on the transistor.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: October 27, 2020
    Assignee: Microsemi Corporation
    Inventors: Pierre Irissou, Etienne Colmet-Daage
  • Patent number: 10811494
    Abstract: A power transistor assembly and method of mitigating short channel effects in a power transistor assembly are provided. The power transistor assembly includes a first layer of semiconductor material formed of a first conductivity type material and a hard mask layer covering at least a portion of the first layer and having a window therethrough exposing a surface of the first layer. The power transistor assembly also includes a first region formed in the first layer of semiconductor material of a second conductivity type material and aligned with the window, one or more source regions formed of first conductivity type material within the first region and separated by a portion of the first region, and an extension of the first region extending laterally through the surface of the first layer.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: October 20, 2020
    Assignee: Microsemi Corporation
    Inventors: Dumitru Gheorge Sdrulla, Avinash Srikrishnan Kashyap
  • Patent number: 10761549
    Abstract: Various electronics systems may benefit from appropriate limitation of short-to-ground current. For example, sensor systems may benefit from a voltage sensing mechanism to minimize short-to-ground current for low drop-out and bypass mode regulators. A system can include a first power transistor configured to operate in a low drop-out mode. The system can also include a short to ground sensor configured to control current to the first power transistor. The short to ground sensor can be configured to limit a maximum short-circuit current below a predefined load current capability.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: September 1, 2020
    Assignee: Microsemi Corporation
    Inventors: Subhasis Sasmal, Jebas Paul Daniel T, Naveen Cannankurichi, Bernard Drexler
  • Patent number: 10760928
    Abstract: A planar linear inductive position sensor is formed on a substrate and includes at least one oscillating coil, a first sensing coil having opposing edges extending beyond opposing edges of the oscillating coil along a linear axis along which a linear position of a conductive target is to be sensed, and a second sensing coil having opposing edges extending beyond opposing edges of the oscillating coil along the linear axis.
    Type: Grant
    Filed: February 21, 2019
    Date of Patent: September 1, 2020
    Assignee: Microsemi Corporation
    Inventors: Ganesh Shaga, Bala Sundaram Nauduri, Sudheer Puttapudi
  • Publication number: 20200271480
    Abstract: A planar linear inductive position sensor is formed on a substrate and includes at least one oscillating coil, a first sensing coil having opposing edges extending beyond opposing edges of the oscillating coil along a linear axis along which a linear position of a conductive object is to be sensed, and a second sensing coil having opposing edges extending beyond opposing edges of the oscillating coil along the linear axis.
    Type: Application
    Filed: February 21, 2019
    Publication date: August 27, 2020
    Applicant: Microsemi Corporation
    Inventors: Ganesh Shaga, Bala Sundaram Nauduri, Sudheer Puttapudi
  • Publication number: 20200266118
    Abstract: A hermetic high-current electronic package includes a package body and a base plate hermetically coupled to the package body. A semiconductor device is thermally mounted to the base plate and has a high-current output. A high-current input/output (I/O) terminal is bonded to the high-current output of the semiconductor device by a strap terminal that is an integral high current heatsink terminal. The high-current I/O terminal passes through a hole formed in a sidewall of the package body. A ceramic seal surrounds the high-current I/O terminal and has a first surface hermetically bonded to an outer surface of the sidewall of the package body. A metal hermetic seal washer surrounds the high-current I/O terminal and is bonded to a second surface of the ceramic seal and bonded to a portion of the high-current I/O terminal that passes through the metal hermetic seal washer.
    Type: Application
    Filed: April 3, 2019
    Publication date: August 20, 2020
    Applicant: Microsemi Corporation
    Inventors: Saeed Shafiyan-Rad, Manuel Medeiros, III, David Scott Doiron
  • Patent number: 10665680
    Abstract: A silicon carbide semiconductor assembly and a method of forming a silicon carbide (SiC) semiconductor assembly are provided. The silicon carbide semiconductor assembly includes a semiconductor substrate and an electrode. The semiconductor substrate is formed of silicon carbide and includes a first surface, a second surface opposing the first surface, and a thickness extending therebetween. The method includes forming one or more electronic devices on the first surface and thinning the semiconductor substrate by removing the second surface to a predetermined depth of semiconductor substrate and leaving a third surface opposing the first surface. The method further includes forming a non-ohmic alloy layer on the third surface at a first temperature range and annealing the alloy layer at a second temperature range forming an ohmic layer, the second temperature range being greater than the first temperature range.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: May 26, 2020
    Assignee: Microsemi Corporation
    Inventors: Bruce Odekirk, Jacob Alexander Soto
  • Patent number: 10622952
    Abstract: A distributed amplifier system constituted of: an input transmission line exhibit a plurality of sections; an output transmission line; an amplifier stage, an output of the amplifier stage coupled to the output transmission line and an input of the amplifier stage coupled to the input transmission line between a respective pair of the plurality of sections; a PIN diode coupled between a first end of the input transmission line and a common potential; and a circuitry coupled between a second end of the input transmission line and the common potential, the second end opposing the first end, such that there is a direct current (DC) flow through the first unidirectional electronic valve, the input transmission line and the circuitry.
    Type: Grant
    Filed: June 7, 2018
    Date of Patent: April 14, 2020
    Assignee: Microsemi Corporation
    Inventor: Peter Shveshkeyev
  • Publication number: 20200109996
    Abstract: An angular rotation sensor system constituted of: a first target with a member radially extending from, and rotating about a longitudinal axis of the first target; a second target with a member radially extending from, and rotating about a longitudinal axis of the second target; a first receive coil comprising a plurality of loops laid out such that adjacent loops exhibit opposing magnetic polarities responsive to a radio frequency current injected into the transmit coil; a second receive coil comprising a plurality of loops laid out such that adjacent loops exhibit opposing magnetic polarities responsive to a radio frequency current injected into the transmit coil; and an output coupled to each of the first and second receive coils, wherein each of the members is shaped and sized to generally match a shape and size of a pair of loops.
    Type: Application
    Filed: October 5, 2018
    Publication date: April 9, 2020
    Applicant: Microsemi Corporation
    Inventor: Kevin Mark Smith, JR.
  • Patent number: 10566416
    Abstract: A semiconductor device constituted of: a semiconductor layer; and a field layer patterned on said semiconductor layer, said field layer constituted of material having characteristics which block diffusion of mobile ions and maintain structural integrity at activation temperatures of up to 1200 degrees centigrade.
    Type: Grant
    Filed: August 15, 2018
    Date of Patent: February 18, 2020
    Assignee: Microsemi Corporation
    Inventors: Amaury Gendron-Hansen, Bruce Odekirk, Nathaniel Berliner, Dumitru Sdrulla
  • Patent number: 10522443
    Abstract: A module package can include a substrate; at least one device component configured to be positioned on the substrate; a module package lid configured to be positioned over the at least one device component and on the substrate, the module package lid exhibiting a plateau portion; and at least one mounting spring configured to be positioned on the module package lid, wherein the at least one mounting spring is configured to be mechanically coupled with a mounting surface and further positionally secure the module package lid and the at least one device component. Each mounting spring can include a middle portion; an end portion having a mounting hole; and a curved section between the middle portion and the end portion, the middle portion arranged to mate with the plateau portion of the module package lid when the end portion are secured to the substrate, the curved section being configured to prevent contact with a first corner portion of the module package lid.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: December 31, 2019
    Assignee: MICROSEMI CORPORATION
    Inventors: Benjamin A. Samples, John Fredrick May
  • Patent number: 10415952
    Abstract: An angular position sensor comprising at least one planar excitation coil and at least two planar sensing coils positioned within an interior of the at least one planar excitation coil, each of the at least two planar sensing coils comprising a clockwise winding portion positioned opposite a counter-clockwise winding portion and a rotatable inductive coupling element comprising a sector aperture, the rotatable inductive coupling element positioned in overlying relation to the at least one planar excitation coil and separated from the at least one planar excitation coil by an air gap.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: September 17, 2019
    Assignee: Microsemi Corporation
    Inventors: Battu Prakash Reddy, Ganesh Shaga
  • Publication number: 20190242725
    Abstract: An apparatus can include a first planar inductive sensor including two oscillator coils and two sensing coils. The apparatus can also include a second planar inductive sensor independent of the first sensor and also including a pair of oscillator and sensing coils. The apparatus can further include a high frequency alternating current carrier generator configured to inject high frequency alternating current carrier signals into the oscillator coils. The carrier signal for the oscillator coil of the first planar inductive sensor is 180 degrees out of phase with a 2nd oscillator coil of the same planar inductive sensor, and wound in an opposite geometric direction, and the oscillator coils of the other inductive sensor can also be wound similarly The two sensing coils of the first planar inductive sensor can be 90 degrees out of phase with each another, and the sensing coils of the other inductive sensor can also be wound similarly.
    Type: Application
    Filed: November 29, 2018
    Publication date: August 8, 2019
    Applicant: Microsemi Corporation
    Inventors: Ganesh Shaga, Bala Sundaram Nauduri
  • Patent number: 10352798
    Abstract: An angular rotation sensor system constituted of: an input shaft target and an output shaft target each comprising a plurality of members parallel to a longitudinal axis of an input shaft or output shaft; a gear target with an angular velocity exhibiting a predetermined ratio with an angular velocity of the input shaft, the gear target comprising a plurality of members, each extending away from the input shaft and orthogonal to a plane which is parallel to the longitudinal axis of the input shaft; and a control circuitry arranged to: determine an angular position of the input shaft responsive to a sensed angular rotation of the input shaft target and a sensed angular rotation of the gear target; and determine the amount of torque applied to the input shaft responsive to the sensed angular rotation of the input shaft target and a sensed angular rotation of the output shaft target.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: July 16, 2019
    Assignee: Microsemi Corporation
    Inventors: Shiju Wang, Timothy Ronald Jackson
  • Patent number: 10320290
    Abstract: A voltage regulator includes an input terminal, an output terminal, a control circuitry, a buck mode switching converter, and a low dropout regulator circuit. The buck mode switching converter is arranged to convert a voltage signal received at the input terminal to a first voltage signal at the output terminal responsive to a first predetermined signal output from the control circuitry. The buck mode switching converter includes an electronically controlled switch in communication with an energy storage element. The low dropout regulator circuit is coupled between the input terminal and the output terminal and includes a linear circuit and is arranged to control a voltage drop across the linear circuit so as to provide a second voltage signal at the output terminal responsive to a second predetermined signal output from the control circuitry.
    Type: Grant
    Filed: August 7, 2014
    Date of Patent: June 11, 2019
    Assignee: Microsemi Corporation
    Inventors: Arkadiy Peker, Bernard Drexler, Tamir Reshef, Reghu Rajan