Abstract: A pulse swallower 41 utilizes a local feedback loop (51 and 52) on its output flip-flop (49) enabling it to extinguish its high level output after one cycle of the clock signal being applied as an input. The other input to the pulse swallower is the swallow signal which initiates a pulse swallow cycle for eliminating a single clock pulse of the input clock (42) from appearing at the clock output (44). This configuration of a pulse swallower enables correct operation, or single pulse swallowing, to occur at frequencies of up to one-over-four.tau.(1/4.tau.) which is higher than that of conventional pulse swallowers.

Abstract: An improved ceramic-based package for electronic devices having a composite flange for heat dissipation comprising a layer of heat conducting metal having a thermal coefficient of expansion appreciably different from that of the base secured to the base and a second layer of metal secured to the first layer having a thermal coefficient of expansion approximately equal to that of the ceramic. In a preferred embodiment, the first layer is copper, and the second is molybdenum.

Abstract: Ohmic contacts having reduced resistivity and enhanced current-carrying capability are fabricated in compound semiconductor devices by substantially saturating the compound semiconductor with two different impurities of the same conductivity type, the different impurities being respectively suitable for occupying the two different types of impurity sites available in the compound semiconductor. The result is a sufficient increase in available carriers that conductivity takes place primarily through field emission tunneling and is enhanced to a degree wholly disproportionate to the increase in the number of available carriers.

Abstract: A microwave transistor having a base and an elongated collector is provided with an elongated, grounded, DC blocking capacitor co-extensive with the collector and the output capacitance (C.sub.ob) is tuned within the transistor package by distributing along the collector a plurality of inductive wire leads connecting the collector to the base through the DC blocking capacitor. Ground returns are provided by base connections to ground on both the input and output sides of the transistor. Such an arrangement provides isolation between input and output while uniformly distributing the reactance of the tuning elements across the entire active area. The result is an increased power output as compared to conventional shunt tuning arrangements.

Abstract: A ballasted finger electrode structure is fabricated on a substrate by the steps of depositing on the substrate a layer of resistive material, forming one or more dielectric regions on the resistive layer; and forming two or more finger electrode segments spaced apart over one or more of the dielectric regions but electrically connected by the resistive region underlying the dielectric region. The result is a finger electrode structure with a precisely defined length of resistive ballasting.

Abstract: A transistor having small, closely spaced emitter and base contact areas and an active area capable of generating heat to be removed, is provided with an electrode structure comprising a finger electrode for connecting emitter or base contact areas with one or more bonding pads beside the active area and, electrically insulated from the finger electrode, a bonding plate electrode overlaying at least a portion of the active area for electrically contacting the base or emitter contact areas, respectively. This contact structure has reduced interconnection inductance and resistance, reduced MOS capacitance, and reduced thermal resistance. In addition, it provides a structure which is suitable for both conventional and flip chip mounting.