Patents Assigned to MicroXact, Inc.
  • Patent number: 8569740
    Abstract: Growth of thermoelectric materials in the form of quantum well superlattices on three-dimensionally structured substrates provide the means to achieve high conversion efficiency of the thermoelectric module combined with inexpensiveness of fabrication and compatibility with large scale production. Thermoelectric devices utilizing thermoelectric materials in the form of quantum well semiconductor superlattices grown on three-dimensionally structured substrates provide improved thermoelectric characteristics that can be used for power generation, cooling and other applications.
    Type: Grant
    Filed: January 12, 2010
    Date of Patent: October 29, 2013
    Assignee: MicroXact Inc.
    Inventor: Vladimir Kochergin
  • Patent number: 8501621
    Abstract: Three-dimensionally spatially localized artificial filament in the active layer of the memristive device formed by means of ion implantation through the top electrode structure provide the means to achieve high repeatability and high reliability of the memristive devices, leading to significantly improved manufacturing yield. The memristive devices fabricated according to the disclosed method of fabrication can be used in data storage, signal processing and sensing applications.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: August 6, 2013
    Assignee: MicroXact, Inc.
    Inventor: Vladimir Kochergin