Abstract: In a DRAM's timing generator with a write-state signal generation circuit responding to activation of a write enable signal to activate a write-state signal and a write driver enable signal generation circuit responding to activation of the write-state signal to activate a write driver enable signal, there is provided a driver reset circuit responding to inactivation of a write enable signal to activate a driver reset signal applied to an NAND circuit downstream of a flip-flop circuit provided in a write driver enable signal generation circuit.

Abstract: A control system for an internal combustion engine which can judge and detect a failure of a valve timing changing unit regardless of operating conditions. The system includes a second storage unit 9 for storing the detection value of an actual valve timing detection unit 2 when the target advance angle set by a target advance angle setting device 3 is a predetermined value and updating the storage value, a storage value update inhibiting unit 10 for inhibiting the update of the storage value of the second storage unit when a change in the storage value updated by a first storage unit 4 is larger than a predetermined value, and failure judging unit 8A for judging a failure of the valve timing changing unit based on the target advance angle set, the detection value of the actual valve timing detection unit and the storage value of the second storage unit.

Abstract: A semiconductor device can reduce a leak current, and a manufacturing method can provide such a semiconductor device. A semiconductor device includes an isolating and insulating film formed on a main surface of a semiconductor substrate including a first conductivity type region, and also includes a field-effect transistor. The field-effect transistor includes a second conductivity type region neighboring to the isolating and insulating film, a gate electrode, a lower layer side wall film formed on a side surface of the gate electrode, an upper layer side wall film formed on the lower layer side wall film and containing a material different from that of the lower layer side wall film, and a high-melting-point metal silicide layer formed on the second conductivity type region.

Abstract: To obtain a production planning system permitting an allowance of the accuracy of production designation information between preceding and following production plans in order to follow the fluctuation of product demand forecast and received orders, a time frame comprising a series of time buckets from T1 to Tn in which the production quantity and the fluctuation width of type of product become more rough for further portion of a production plan are generated and a product quantity and type of product at a certain planned point of time are allocated to each of the time buckets from T1 to Tn. As a production period comes nearer, the time buckets are finely divided and recombined to successively decide planned production quantity and type of product. In this case, an executable production designation is automatically generated by referring to a condition storing module 3 which stores the conditions for dividing and recombining the quantity and type of product.