Abstract: A sidewall oxide layer and a sidewall insulation layer are formed to cover the edge portion of an SOI layer. A channel stopper region is formed in the vicinity of the edge portion of the SOI layer. A protruded insulation layer is formed on the channel stopper region. A gate electrode extends from a region over the SOI layer to the protruded insulation layer and the sidewall insulation layer. In this way, reduction in threshold voltage Vth of a parasitic MOS transistor at the edge portion of the SOI layer can be suppressed.

Abstract: A vibration damping apparatus for an elevator system capable of reducing vibrations of an elevator car in the horizontal direction while preventing friction from occurring in driving mechanisms of an actuators. The apparatus includes magnetic actuators mounted fixedly on one of lower surface of a floor of an elevator car or a bottom member of a car supporting frame and corresponding magnetic pole members mounted on the other one. Vibration sensors are installed on the car floor or the bottom member of the car supporting frame. Detection signals of the sensors are inputted to a controller which responds thereto by controlling driving of the magnetic actuators so that vibration of the elevator car can be reduced.

Abstract: The present invention concerns more particularly a method of isolating target cell signals originating from a target cell from active cell signals originating from an active cell in a cell search.