Abstract: Provided is a semiconductor integrated circuit that improves insulation reliability between a high-voltage circuit and a low-voltage circuit. The semiconductor integrated circuit includes the following: a first circuit controlled by a control signal of low voltage and driven at a higher voltage; a second circuit configured to output the control signal to the first circuit to control the driving of the first circuit; and an insulation circuit including insulating elements connected to each other in series, the insulation circuit connecting between the first and the second circuits in series. The insulation circuit is configured to magnetically or capacitively couple the control signal in each insulating element to transmit the control signal from the second circuit to the first circuit, and is configured to insulate the first circuit from the second circuit in each insulating element to prevent the higher voltage from being applied between the first and second circuits.

Abstract: A digital broadcasting reception apparatus (100) is provided with: a reception unit (111, 121) that receives a signal; a signal strength detection unit (112, 122) that detects the received strength of the received signal; a channel scan control unit (125) that detects receivable physical channels; an area map storage unit (129) that stores coverage area information indicating coverage areas; a current position detection unit (127) that detects the current position; a tuning control unit (118) that determines a distance threshold value on the basis of the received strength detected by the signal strength detection unit when the channel scan control unit (125) detects a physical channel and the current position, at which the detection was made, is not included within the coverage area of the detected physical channel; and an area map generating unit (128) that expands the coverage area on the basis of the determined distance threshold value.

Abstract: To suppress an unbalance of a dwell period in a changeover of phases in which switching is dwelled in an inverter controller. A PWM operation unit 5 includes a modulation-wave generating unit 11 that generates a modulation wave as a voltage command value to an inverter main circuit 2, a carrier-wave generating unit 12 that generates a carrier wave used as a reference for a switching command, and a comparing unit 13 that compares the modulation wave generated by the modulation-wave generating unit 11 and the carrier wave generated by the carrier-wave generating unit 12. During an operation in a two-phase modulation mode in which switching of any one of three phases configuring the inverter main circuit 2 is dwelled, the PWM operation unit 5 controls the carrier-wave generating unit 12 to set a carrier wave frequency to an integral multiple of a modulation wave frequency.

Abstract: On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength ?, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (?/n)×0.95 to (?/n)×1.