Patents Assigned to Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
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Patent number: 11958022Abstract: A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.Type: GrantFiled: October 7, 2020Date of Patent: April 16, 2024Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), HIGH-PURITY SILICON CORPORATIONInventors: Wes Teichmiller, Bryan H. Nettles, Mark Servos, Matthias A. Colomb
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Patent number: 11786877Abstract: In the hydrochlorination reaction, silicon tetrachloride (STC), metallurgical silicon, and hydrogen are converted to trichlorosilane (TCS) at about 540° C. Previously, a pilot-scale reactor was used to study the yield of TCS produced by the hydrochlorination reaction. The yield observed by experimentation compared favorably with a scalable mathematical model developed to predict the rate of TCS conversion. The model predicted that 90% of the final amount of TCS produced was achieved after the reactant gas traveled a quarter of the vertical distance in the reaction section of the reactor. The pilot-scale reactor was shortened to verify the model predictions. In addition, some catalytic effects on the reaction were studied.Type: GrantFiled: March 23, 2021Date of Patent: October 17, 2023Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), HIGH-PURITY SILICON CORPORATIONInventors: Matthias A. Colomb, Bryan H. Nettles
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Publication number: 20220105477Abstract: A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.Type: ApplicationFiled: October 7, 2020Publication date: April 7, 2022Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)Inventors: Wes Teichmiller, Bryan H. Nettles, Mark Servos, Matthias A. Colomb
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Patent number: 11261096Abstract: A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated and additionally treated in a manner that controls the rate of reaction. The polymer byproducts are treated with a first inert gas under partial vacuum and a second oxygen containing gas to convert the polymer byproducts. The reaction rate can be controlled by regulating the fill pressure of reactant gas, controlling the amount of oxygen in the reactant gas, and stripping of the raw polymer with heat and or a vacuum. The solid byproduct remaining after treating the polymer, which is predominately silicon suboxides (SiOx) and silicon dioxide (SiO2), is inert and is easily removed.Type: GrantFiled: June 29, 2018Date of Patent: March 1, 2022Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATIONInventors: Matthias Colomb, Rick Deckbar, Bryan Nettles
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Publication number: 20210291133Abstract: In the hydrochlorination reaction, silicon tetrachloride (STC), metallurgical silicon, and hydrogen are converted to trichlorosilane (TCS) at about 540° C. Previously, a pilot-scale reactor was used to study the yield of TCS produced by the hydrochlorination reaction. The yield observed by experimentation compared favorably with a scalable mathematical model developed to predict the rate of TCS conversion. The model predicted that 90% of the final amount of TCS produced was achieved after the reactant gas traveled a quarter of the vertical distance in the reaction section of the reactor. The pilot-scale reactor was shortened to verify the model predictions. In addition, some catalytic effects on the reaction were studied.Type: ApplicationFiled: March 23, 2021Publication date: September 23, 2021Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)Inventors: Matthias A. Colomb, Bryan H. Nettles
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Patent number: 10968934Abstract: An apparatus and method of manufacturing silicon seed rod in which two silicon seeds are joined into one long silicon seed rod by mechanical coupling. A mechanical seed coupler is a body in having an outer wall, an upper surface with an upper aperture, a lower surface with a lower aperture, and an inner wall surrounding an inner space. The mechanical seed couple can be of a shape including a cylinder shape, an elliptical tube shape, a rectangular tube shape and a square tube shape. Furthermore the mechanical seed coupler can be of unitary construction, made from one solid piece of material, or it can be composed of subparts.Type: GrantFiled: November 30, 2017Date of Patent: April 6, 2021Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATIONInventors: Joseph Lovorn, Larry Gurley
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Patent number: 10512954Abstract: A method to prevent groundings of polycrystalline silicon rod holders to a reactor plate by the residual polymer in the following manner: first, providing a polycrystalline silicon reactor having a reactor plate with a plurality of silicon rod holders separated from the reactor plate with an insulation; next establishing an electrical circuit from a ground connection on the reactor plate connected to high potential test equipment to a high voltage probe; and finally completing the electrical circuit by contacting the high voltage probe to the holder. By this method any remaining polymer is physically removed as the polymer burns or is ejected by the energetic release caused by mild arcing from the holder to the reactor plate.Type: GrantFiled: May 2, 2018Date of Patent: December 24, 2019Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATIONInventors: Mark Servos, Steve Varnes, Matthias Colomb
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Patent number: 10294109Abstract: The present invention relates to an apparatus and a method for producing polycrystalline silicon having a reduced amount of boron compound impurities. Especially, the boron compounds are removed from the process for producing polycrystalline silicon, while the trichlorosilane is purified by distillation. The invention feeds condensed liquid trichlorosilane into a primary distillation tower below the liquid level inside the primary distillation tower thereby scrubbing the boron impurities upon contact inside the primary distillation tower. There result is trichlorosilane leaving the primary distillation tower with total amount of boron at least 10 times less.Type: GrantFiled: January 16, 2018Date of Patent: May 21, 2019Assignees: MITSUBISHI POLYCRYSTALLINE SILICON AMERICA CORPORATION (MIPSA), MITSUBISHI MATERIALS CORPORATIONInventors: April Ashworth, Michael W. Keevan
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Patent number: 9863453Abstract: An apparatus and method of manufacturing silicon seed rod in which two silicon seeds are joined into one long silicon seed rod by mechanical coupling. A mechanical seed coupler is a body in having an outer wall, an upper surface with an upper aperture, a lower surface with a lower aperture, and an inner wall surrounding an inner space. The mechanical seed couple can be of a shape including a cylinder shape, an elliptical tube shape, a rectangular tube shape and a square tube shape. Furthermore the mechanical seed coupler can be of unitary construction, made from one solid piece of material, or it can be composed of subparts.Type: GrantFiled: March 15, 2013Date of Patent: January 9, 2018Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATIONInventors: Joseph Lovorn, Larry Gurley
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Patent number: 9758384Abstract: The present invention relates to internals useful for minimizing bubble size in a bubbling fluidized bed reactor. One use for the invention is in an apparatus and method for producing trichlorosilane in which metallurgical grade silicon is reacted with hydrogen chloride gas and while being fluidized by the hydrogen chloride gas, thereby producing trichlorosilane.Type: GrantFiled: December 1, 2014Date of Patent: September 12, 2017Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATIONInventors: Bryan Nettles, Matthias Colomb, Rick Deckbar
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Patent number: 9410263Abstract: The device of according to the present invention is a device for holding a single crystal silicon seed. The device or holder contains a plurality of strips to clamp a seed crystal in the seed crystal holder; and a base supporting the plurality of strips. The plurality of strips each has a free end which contacts a single crystal silicon seed and an end opposite the free end which joins the base and becomes integral therewith. The plurality of strips are bent or folded in such that they exert pressure on a seed crystal when the seed crystal is inserted among the plurality of strips.Type: GrantFiled: March 15, 2013Date of Patent: August 9, 2016Assignee: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)Inventors: Brian P. Smith, Christopher Cook
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Publication number: 20140261160Abstract: The device of according to the present invention is a device for holding a single crystal silicon seed. The device or holder contains a plurality of strips to clamp a seed crystal in the seed crystal holder; and a base supporting the plurality of strips. The plurality of strips each has a free end which contacts a single crystal silicon seed and an end opposite the free end which joins the base and becomes integral therewith. The plurality of strips are bent or folded in such that they exert pressure on a seed crystal when the seed crystal is inserted among the plurality of strips.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Applicants: MITSUBISHI MATERIALS CORPORATION, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)Inventors: Brian P. Smith, Christopher Cook
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Publication number: 20140270933Abstract: The present invention relates to an apparatus and method of manufacturing silicon seed rod in which two silicon seeds are joined into one long silicon seed rod by mechanical coupling. A mechanical seed coupler is a body in having an outer wall, an upper surface with an upper aperture, a lower surface with a lower aperture, and an inner wall surrounding an inner space. The mechanical seed couple can be of a shape including a cylinder shape, an elliptical tube shape, a rectangular tube shape and a square tube shape. Furthermore the mechanical seed coupler can be of unitary construction, made from one solid piece of material, or it can be composed of subparts.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Applicants: Mitsubishi Materials Corporation, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)Inventors: Joseph Lovorn, Larry Gurley
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Patent number: 8518352Abstract: The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.Type: GrantFiled: June 25, 2012Date of Patent: August 27, 2013Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), Mitsubishi Materials CorporationInventors: Takeshi Kamei, Mamoru Nakano
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Publication number: 20130121908Abstract: The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor.Type: ApplicationFiled: December 28, 2012Publication date: May 16, 2013Applicants: MITSUBISHI MATERIALS CORPORATION, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)Inventors: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATION
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Patent number: 8431082Abstract: The invention relates to a method and an apparatus for producing purified hydrogen gas by a pressure swing adsorption process. Further the invention relates to detecting an operating life of adsorbents in a adsorption tower. The method and the apparatus have a gas supply unit for adding an inert gas to an unpurified hydrogen gas and a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower.Type: GrantFiled: July 11, 2012Date of Patent: April 30, 2013Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), Mitsubishi Materials CorporationInventors: Takeshi Kamei, Yasunari Takimoto
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Patent number: 8404205Abstract: The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane.Type: GrantFiled: January 7, 2011Date of Patent: March 26, 2013Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), Mitsubishi Materials Corporation (MMC)Inventors: Laura Prine, Richard M. Halstead, Michael W. Keevan
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Publication number: 20120272827Abstract: The invention relates to a method and an apparatus for producing purified hydrogen gas by a pressure swing adsorption process. Further the invention relates to detecting an operating life of adsorbents in a adsorption tower. The method and the apparatus have a gas supply unit for adding an inert gas to an unpurified hydrogen gas and a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower.Type: ApplicationFiled: July 11, 2012Publication date: November 1, 2012Applicants: MITSUBISHI MATERIALS CORPORATION, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)Inventors: Takeshi Kamei, Yasunari Takimoto
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Publication number: 20120275962Abstract: The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.Type: ApplicationFiled: June 25, 2012Publication date: November 1, 2012Applicants: MITSUBISHI MATERIALS CORPORATION, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)Inventors: Takeshi Kamei, Mamoru Nakano
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Patent number: 8241401Abstract: The invention relates to a method and an apparatus for producing purified hydrogen gas by a pressure swing adsorption process. Further the invention relates to detecting an operating life of adsorbents in a adsorption tower. The method and the apparatus have a gas supply unit for adding an inert gas to an unpurified hydrogen gas and a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower.Type: GrantFiled: November 2, 2010Date of Patent: August 14, 2012Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), Mitsubishi Materials CorporationInventors: Takeshi Kamei, Yasunari Takimoto