Patents Assigned to Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
  • Patent number: 11958022
    Abstract: A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.
    Type: Grant
    Filed: October 7, 2020
    Date of Patent: April 16, 2024
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), HIGH-PURITY SILICON CORPORATION
    Inventors: Wes Teichmiller, Bryan H. Nettles, Mark Servos, Matthias A. Colomb
  • Patent number: 11786877
    Abstract: In the hydrochlorination reaction, silicon tetrachloride (STC), metallurgical silicon, and hydrogen are converted to trichlorosilane (TCS) at about 540° C. Previously, a pilot-scale reactor was used to study the yield of TCS produced by the hydrochlorination reaction. The yield observed by experimentation compared favorably with a scalable mathematical model developed to predict the rate of TCS conversion. The model predicted that 90% of the final amount of TCS produced was achieved after the reactant gas traveled a quarter of the vertical distance in the reaction section of the reactor. The pilot-scale reactor was shortened to verify the model predictions. In addition, some catalytic effects on the reaction were studied.
    Type: Grant
    Filed: March 23, 2021
    Date of Patent: October 17, 2023
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), HIGH-PURITY SILICON CORPORATION
    Inventors: Matthias A. Colomb, Bryan H. Nettles
  • Publication number: 20220105477
    Abstract: A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.
    Type: Application
    Filed: October 7, 2020
    Publication date: April 7, 2022
    Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Wes Teichmiller, Bryan H. Nettles, Mark Servos, Matthias A. Colomb
  • Patent number: 11261096
    Abstract: A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated and additionally treated in a manner that controls the rate of reaction. The polymer byproducts are treated with a first inert gas under partial vacuum and a second oxygen containing gas to convert the polymer byproducts. The reaction rate can be controlled by regulating the fill pressure of reactant gas, controlling the amount of oxygen in the reactant gas, and stripping of the raw polymer with heat and or a vacuum. The solid byproduct remaining after treating the polymer, which is predominately silicon suboxides (SiOx) and silicon dioxide (SiO2), is inert and is easily removed.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: March 1, 2022
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATION
    Inventors: Matthias Colomb, Rick Deckbar, Bryan Nettles
  • Publication number: 20210291133
    Abstract: In the hydrochlorination reaction, silicon tetrachloride (STC), metallurgical silicon, and hydrogen are converted to trichlorosilane (TCS) at about 540° C. Previously, a pilot-scale reactor was used to study the yield of TCS produced by the hydrochlorination reaction. The yield observed by experimentation compared favorably with a scalable mathematical model developed to predict the rate of TCS conversion. The model predicted that 90% of the final amount of TCS produced was achieved after the reactant gas traveled a quarter of the vertical distance in the reaction section of the reactor. The pilot-scale reactor was shortened to verify the model predictions. In addition, some catalytic effects on the reaction were studied.
    Type: Application
    Filed: March 23, 2021
    Publication date: September 23, 2021
    Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Matthias A. Colomb, Bryan H. Nettles
  • Patent number: 10968934
    Abstract: An apparatus and method of manufacturing silicon seed rod in which two silicon seeds are joined into one long silicon seed rod by mechanical coupling. A mechanical seed coupler is a body in having an outer wall, an upper surface with an upper aperture, a lower surface with a lower aperture, and an inner wall surrounding an inner space. The mechanical seed couple can be of a shape including a cylinder shape, an elliptical tube shape, a rectangular tube shape and a square tube shape. Furthermore the mechanical seed coupler can be of unitary construction, made from one solid piece of material, or it can be composed of subparts.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: April 6, 2021
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATION
    Inventors: Joseph Lovorn, Larry Gurley
  • Patent number: 10512954
    Abstract: A method to prevent groundings of polycrystalline silicon rod holders to a reactor plate by the residual polymer in the following manner: first, providing a polycrystalline silicon reactor having a reactor plate with a plurality of silicon rod holders separated from the reactor plate with an insulation; next establishing an electrical circuit from a ground connection on the reactor plate connected to high potential test equipment to a high voltage probe; and finally completing the electrical circuit by contacting the high voltage probe to the holder. By this method any remaining polymer is physically removed as the polymer burns or is ejected by the energetic release caused by mild arcing from the holder to the reactor plate.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: December 24, 2019
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATION
    Inventors: Mark Servos, Steve Varnes, Matthias Colomb
  • Patent number: 10294109
    Abstract: The present invention relates to an apparatus and a method for producing polycrystalline silicon having a reduced amount of boron compound impurities. Especially, the boron compounds are removed from the process for producing polycrystalline silicon, while the trichlorosilane is purified by distillation. The invention feeds condensed liquid trichlorosilane into a primary distillation tower below the liquid level inside the primary distillation tower thereby scrubbing the boron impurities upon contact inside the primary distillation tower. There result is trichlorosilane leaving the primary distillation tower with total amount of boron at least 10 times less.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: May 21, 2019
    Assignees: MITSUBISHI POLYCRYSTALLINE SILICON AMERICA CORPORATION (MIPSA), MITSUBISHI MATERIALS CORPORATION
    Inventors: April Ashworth, Michael W. Keevan
  • Patent number: 9863453
    Abstract: An apparatus and method of manufacturing silicon seed rod in which two silicon seeds are joined into one long silicon seed rod by mechanical coupling. A mechanical seed coupler is a body in having an outer wall, an upper surface with an upper aperture, a lower surface with a lower aperture, and an inner wall surrounding an inner space. The mechanical seed couple can be of a shape including a cylinder shape, an elliptical tube shape, a rectangular tube shape and a square tube shape. Furthermore the mechanical seed coupler can be of unitary construction, made from one solid piece of material, or it can be composed of subparts.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: January 9, 2018
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATION
    Inventors: Joseph Lovorn, Larry Gurley
  • Patent number: 9758384
    Abstract: The present invention relates to internals useful for minimizing bubble size in a bubbling fluidized bed reactor. One use for the invention is in an apparatus and method for producing trichlorosilane in which metallurgical grade silicon is reacted with hydrogen chloride gas and while being fluidized by the hydrogen chloride gas, thereby producing trichlorosilane.
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: September 12, 2017
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATION
    Inventors: Bryan Nettles, Matthias Colomb, Rick Deckbar
  • Patent number: 9410263
    Abstract: The device of according to the present invention is a device for holding a single crystal silicon seed. The device or holder contains a plurality of strips to clamp a seed crystal in the seed crystal holder; and a base supporting the plurality of strips. The plurality of strips each has a free end which contacts a single crystal silicon seed and an end opposite the free end which joins the base and becomes integral therewith. The plurality of strips are bent or folded in such that they exert pressure on a seed crystal when the seed crystal is inserted among the plurality of strips.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: August 9, 2016
    Assignee: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Brian P. Smith, Christopher Cook
  • Publication number: 20140261160
    Abstract: The device of according to the present invention is a device for holding a single crystal silicon seed. The device or holder contains a plurality of strips to clamp a seed crystal in the seed crystal holder; and a base supporting the plurality of strips. The plurality of strips each has a free end which contacts a single crystal silicon seed and an end opposite the free end which joins the base and becomes integral therewith. The plurality of strips are bent or folded in such that they exert pressure on a seed crystal when the seed crystal is inserted among the plurality of strips.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicants: MITSUBISHI MATERIALS CORPORATION, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Brian P. Smith, Christopher Cook
  • Publication number: 20140270933
    Abstract: The present invention relates to an apparatus and method of manufacturing silicon seed rod in which two silicon seeds are joined into one long silicon seed rod by mechanical coupling. A mechanical seed coupler is a body in having an outer wall, an upper surface with an upper aperture, a lower surface with a lower aperture, and an inner wall surrounding an inner space. The mechanical seed couple can be of a shape including a cylinder shape, an elliptical tube shape, a rectangular tube shape and a square tube shape. Furthermore the mechanical seed coupler can be of unitary construction, made from one solid piece of material, or it can be composed of subparts.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicants: Mitsubishi Materials Corporation, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Joseph Lovorn, Larry Gurley
  • Patent number: 8518352
    Abstract: The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.
    Type: Grant
    Filed: June 25, 2012
    Date of Patent: August 27, 2013
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), Mitsubishi Materials Corporation
    Inventors: Takeshi Kamei, Mamoru Nakano
  • Publication number: 20130121908
    Abstract: The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor.
    Type: Application
    Filed: December 28, 2012
    Publication date: May 16, 2013
    Applicants: MITSUBISHI MATERIALS CORPORATION, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), MITSUBISHI MATERIALS CORPORATION
  • Patent number: 8431082
    Abstract: The invention relates to a method and an apparatus for producing purified hydrogen gas by a pressure swing adsorption process. Further the invention relates to detecting an operating life of adsorbents in a adsorption tower. The method and the apparatus have a gas supply unit for adding an inert gas to an unpurified hydrogen gas and a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: April 30, 2013
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), Mitsubishi Materials Corporation
    Inventors: Takeshi Kamei, Yasunari Takimoto
  • Patent number: 8404205
    Abstract: The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane.
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: March 26, 2013
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), Mitsubishi Materials Corporation (MMC)
    Inventors: Laura Prine, Richard M. Halstead, Michael W. Keevan
  • Publication number: 20120272827
    Abstract: The invention relates to a method and an apparatus for producing purified hydrogen gas by a pressure swing adsorption process. Further the invention relates to detecting an operating life of adsorbents in a adsorption tower. The method and the apparatus have a gas supply unit for adding an inert gas to an unpurified hydrogen gas and a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower.
    Type: Application
    Filed: July 11, 2012
    Publication date: November 1, 2012
    Applicants: MITSUBISHI MATERIALS CORPORATION, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Takeshi Kamei, Yasunari Takimoto
  • Publication number: 20120275962
    Abstract: The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.
    Type: Application
    Filed: June 25, 2012
    Publication date: November 1, 2012
    Applicants: MITSUBISHI MATERIALS CORPORATION, Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
    Inventors: Takeshi Kamei, Mamoru Nakano
  • Patent number: 8241401
    Abstract: The invention relates to a method and an apparatus for producing purified hydrogen gas by a pressure swing adsorption process. Further the invention relates to detecting an operating life of adsorbents in a adsorption tower. The method and the apparatus have a gas supply unit for adding an inert gas to an unpurified hydrogen gas and a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower.
    Type: Grant
    Filed: November 2, 2010
    Date of Patent: August 14, 2012
    Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), Mitsubishi Materials Corporation
    Inventors: Takeshi Kamei, Yasunari Takimoto