Abstract: This invention concerns a noncontacting type thermometer which is improved in sensitivity of detection and accuracy of measurement and meanwhile adapted to prevent a thermistor element itself from self-generation of heat. A pulse voltage generating circuit 15 generates a pulse voltage of a rectangular waveform having a pulse wave height, a pulse width, and a pulse cycle enough to render negligible the effects of the self-generation of heat of a thermistor bolometer element in accordance with the thermal capacity of the thermistor bolometer. A detecting circuit 20 admits the pulse voltage, generates a differential voltage arising from a change in the magnitude of resistance corresponding to the amount of an incident infrared radiation of an infrared radiation detecting thermistor bolometer element RA, and amplifies this differential voltage by means of a differential amplifier 24.

Abstract: A humidity sensor of a heat conduction type which enables a humidity measurement to be produced by a single temperature sensing resistor so as to reduce a change in characteristic depending on a temperature change of the measurement atmosphere and to reduce the cost, comprises a temperature sensing resistor 1 and three fixed resistors R.sub.1, R.sub.2 and R.sub.3 which form a Wheatstone bridge circuit. The humidity is measured by utilizing the fact that the heat dissipation of the temperature sensing resistor 1 changes depending on the humidity. The temperature sensing resistor 1 is heated by a heat generator 2 for self-radiation of Joule heat so that the temperature of the temperature sensing resistor 1 is controlled to be at a constant temperature of 150.degree. C. or more. The output voltage value of the Wheatstone bridge circuit is corrected with reference to the variation of the output voltage value depending on the ambient temperature of the temperature sensing resistor 1.

Abstract: A piezo-electricity generation device without an external power supply unit includes a rectifying means which rectifies an AC voltage generated by the vibration of at least one piezo-electric plate. An accumulating means accumulates an electric charge outputted through the rectifying means. A voltage setting means provides a prespecified voltage. A transmission means transmits substantially all of the electric charge accumulated in the accumulating means to a signal output means when the output voltage of the accumulating means exceeds the prespecified voltage set by the voltage setting means. A timing setting means may also or alternatively be provided for setting a prespecified timing such that the transmission means transmits substantially all of the electric charge stored in the accumulating means at the prespecified timing set by said timing setting means.

Abstract: A flow sensor eliminates turbulence of fluid flow due to a structure of the temperature detecting portion so that a temperature of the temperature detecting portions does not fluctuate due to the turbulence of the fluid. The flow sensor is formed on a substrate. Each of a first temperature detecting portion and a second temperature detecting portion has a heating function and a temperature detecting function, and are arranged along a direction of flow of the fluid. A supporting portion is formed on the substrate for supporting the first and second temperature detecting portions thereon. The supporting portion does not have a side surface facing substantially in the direction of flow of the fluid. A side surface of the supporting portion is protected by a guard portion formed along the side surface.

Abstract: An infrared radiation sensor of high accuracy is provided which is suitable for a thermometer to be used for effecting noncontacting determination of a temperature of a subject under test, particularly a temperature of a tympanic membrane, by utilizing the temperature characteristics of the saturated current flowing in the reverse direction through a Schottky junction diode.

Abstract: The present invention is to provide a compact and high speed tunnel transistor having a high input impedance, yet consuming only a small quantity of power. In a tunnel transistor according to the present invention, a gate electrode is provided via an insulating thin film on a Schottky junction which is a junction between a semiconductor and a metallic layer, a p-n.sup.+ junction between semiconductors, or an n-p.sup.+ junction between semiconductors so that an accumulation layer having a high carrier density is formed bear the surface of a semiconductor by adjusting a gate voltage Vg and thus a tunnel junction is formed between this accumulation layer and a metallic layer or a semiconductor having a high carrier density (n.sup.+ or p.sup.+) by adjusting the gate voltage Vg.