Abstract: A method for passivating sidewalls of patterned semiconductor wafer including ridge(s). The method includes: depositing first layer of first dielectric material on pattern surface of said wafer; etching portion of first layer to obtain tapered portions of first dielectric material along sidewall(s) of ridge(s); depositing second layer of second dielectric material on tapered portions and said wafer; depositing photo-sensitive material on second layer; aligning mask with photo-sensitive material, wherein portion(s) of photo-sensitive material corresponding to top surface of ridge(s) is/are unmasked, and remaining portion is masked; applying developing solution and exposing photo-sensitive material to remove portion(s) of photo-sensitive material; etching portion(s) of second layer that is/are deposited on top surface of ridge(s); and removing photo-sensitive material.

Abstract: A method for fabricating a semiconductor device on a semiconductor substrate, wherein the semiconductor device is adapted to provide target lasing properties, the method includes creating, a mask layer over the semiconductor substrate, the mask layer having at least one opening to expose a region of the semiconductor substrate, etching using a first etching process the exposed region, utilizing inductively coupled plasma with preselected first set of parameters to obtain a baseline mesa profile, the baseline mesa profile having a baseline mesa angle, re-etching using a second etching process the etched region, utilizing inductively coupled plasma with preselected second set of parameters, to alter the baseline mesa profile to obtain a requisite mesa profile having a requisite mesa angle defined by the target lasing properties and the requisite mesa angle being different from the baseline mesa angle, removing the mask layer and defining a p-n junction for the semiconductor substrate.

Abstract: An apparatus for stacking and coating of very short cavity laser diode arrays. The apparatus includes an array holder fixture to securely hold the very short cavity laser diode arrays and spacer arrays, and a stacking plate. The array holder fixture including a top-side presser to secure a stack of very short cavity laser arrays and spacer arrays from a first end of the stack, a bottom-side presser to secure the stack of very short cavity laser arrays and spacer arrays from a second end of the stack, and a pair of side clamps. The array holder fixture is operatively coupled to the stacking plate during the stacking of the very short cavity laser diode arrays and spacer arrays.

Abstract: A method for passivating sidewalls of patterned semiconductor wafer including ridge(s). The method includes: depositing first layer of first dielectric material on pattern surface of said wafer; etching portion of first layer to obtain tapered portions of first dielectric material along sidewall(s) of ridge(s); depositing second layer of second dielectric material on tapered portions and said wafer; depositing photo-sensitive material on second layer; aligning mask with photo-sensitive material, wherein portion(s) of photo-sensitive material corresponding to top surface of ridge(s) is/are unmasked, and remaining portion is masked; applying developing solution and exposing photo-sensitive material to remove portion(s) of photo-sensitive material; etching portion(s) of second layer that is/are deposited on top surface of ridge(s); and removing photo-sensitive material.

Abstract: A method for forming a contact surface on a top of a mesa structure formed on a semiconductor substrate deposited with an insulating layer. The method includes depositing a first resist layer over the insulating layer, depositing a second resist layer over the first resist layer, defining a first portion of the second resist layer, wherein the first portion overlaps the top of the mesa structure, forming a first opening in the first portion by treating the second resist layer to expose a second portion of the first resist layer beneath thereof, forming a second opening in the first resist layer, by treating the exposed second portion to expose a third portion of the insulating layer beneath thereof, and etching the exposed third portion to form the contact surface on the top of the mesa structure.

Abstract: A method for operating a biomedical laser. The method includes providing the biomedical laser having a first range of operational parameters; providing a second range of operational parameters for the biomedical laser; activating the biomedical laser to operate within the second range of operational parameters; identifying a need for a change in operational parameters of the biomedical laser; and triggering an action based on the identified need. The action includes providing a third range of operational parameters for the biomedical laser and activating the biomedical laser to operate within the third range of operational parameters; and de-activating a range of operational parameters. The second and third range of operational parameters is within the first range of operational parameters.

Abstract: A method for re-configuring a biomedical laser device. The biomedical laser device is pre-configured to be operable in one or more operational modes, and is provided with set of operational parameters that are employed for at least one of: given medical procedure, given medical treatment, activation of given drug, illumination of given dye. The method includes collecting information indicative of light output properties of biomedical laser device measured during given operational mode; detecting deviation in measured light output properties with respect to predefined light output properties for given operational mode; determining new set of operational parameters that are to be employed for at least one of: new medical procedure, new medical treatment, activation of new drug, illumination of new dye; and sending new set of operational parameters to biomedical laser device for re-configuring biomedical laser device to be operable in a new operational mode.

Abstract: The invention relates to an optically pumped multilayered modulator having surface-normal geometry. The multilayer structure comprises an absorber section through which an optical signal (401) to be modulated is coupled from an input (401) to an output (400). The multilayer structure further comprises control means for supplying a control signal for controlling the transmission characteristics of the absorber section. The control signal is generated by an in-plane waveguide-type laser integrated monolithically with the saturable absorption region. The in-plane control laser includes waveguide regions (405) and multiple-quantum-well layers (409) used as a gain medium. The laser beam is adapted to travel through the absorber section in order to modulate the transmission characteristics of the absorber section.