Patents Assigned to MOS EPI, Inc.
  • Post-epitaxial thermal oxidation for reducing microsteps on polished semiconductor wafers
    Patent number: 6599758
    Abstract: A method for reducing microsteps on an epitaxial layer deposited on a polished semiconductor wafer substrate by post-epitaxial thermal oxidation. The method produces very smooth semiconductor wafers by performing the steps of depositing an epitaxial layer on a wafer substrate, oxidizing a top portion of the expitaxial layer, and removing the oxidized top portion. As a result, the wafer's surface presents little or no microsteps thereon.
    Type: Grant
    Filed: August 16, 2002
    Date of Patent: July 29, 2003
    Assignee: MOS EPI, Inc.
    Inventors: Danny Kenny, Keith Lindberg
  • Post epitaxial thermal oxidation
    Publication number: 20020192844
    Abstract: Disclosed is a system and method for handling post epitaxial thermal oxidation. The method produces semiconductor wafers by performing the steps of forming a wafer substrate, depositing an epilayer on the substrate, oxidizing a top portion of the epilayer, and removing the oxidized top portion. As a result, the wafer's surface is very smooth, with little or no micro-steps thereon.
    Type: Application
    Filed: August 16, 2002
    Publication date: December 19, 2002
    Applicant: MOS EPI, Inc.
    Inventors: Danny Kenny, Keith Lindberg
  • POST-EPITAXIAL THERMAL OXIDATION FOR REDUCING MICROSTEPS ON POLISHED SEMICONDUCTOR WAFERSOST EPITAXIAL THERMAL OXIDATION
    Publication number: 20020106872
    Abstract: Disclosed is a system and method for handling post epitaxial thermal oxidation. The method produces semiconductor wafers by performing the steps of forming a wafer substrate, depositing an epilayer on the substrate, oxidizing a top portion of the epilayer, and removing the oxidized top portion. As a result, the wafer's surface is very smooth, with little or no micro-steps thereon.
    Type: Application
    Filed: April 2, 2002
    Publication date: August 8, 2002
    Applicant: MOS EPI, Inc.
    Inventors: Danny Kenney, Keith Lindberg
  • Solid phase water scrub for defect removal
    Patent number: 6135864
    Abstract: A system and method for using solid-phase water scrub to remove defects from a wafer surface is disclosed. The method includes the steps of placing the wafer proximate to a frozen substrate and moving the wafer relative to the frozen substrate, thereby causing a portion of the frozen substrate to liquefy. As a result, defects are effectively removed from the wafer's surface.
    Type: Grant
    Filed: January 19, 1999
    Date of Patent: October 24, 2000
    Assignee: MOS EPI, Inc.
    Inventors: Danny Kenny, Keith Lindberg