Abstract: Methods and processes to fabricate thermoelectric materials and more particularly to methods and processes to fabricate nano-sized doped silicon-based semiconductive materials to use as thermoelectrics in the production of electricity from recovered waste heat. Substantially oxidant-free and doped silicon particulates are fractured and sintered to form a porous nano-sized silicon-based thermoelectric material.

Abstract: Anodes formed from a thixotropic mixture including spherical silicon nanospheres, a dispersant-binder, an alcoholic carrier liquid, and conductive carbon are disclosed. Cathodes formed from a thixotropic mixture including lithium metal oxide particulates, a dispersant-binder, an alcoholic carrier liquid, and conductive carbon also are disclosed. The thixotropic mixtures are applied to a metal conductor foil or combined with metal conductor particulates and cured to form the electrode. After curing, the electrode includes the metal conductor and the solids held in a crosslinked polymer matrix formed by the dispersant-binder on the surface of the metal conductor as a thin film. Anodes are preferably formed from a copper metal conductor, while cathodes are preferably formed from an aluminum metal conductor. The electrodes formed from the thixotropic mixture may offer an up to 1,200% improvement in energy transfer in relation to conventional carbon-based anodes.

Abstract: Anodes for the lithium secondary batteries include a strong, electrically conductive, porous superstructure filled with a milled or melted interstitial material, such as nano-scaled silicon; the milled or melted interstitial material provides high lithiation capacity, and the superstructure provides durability and controls the anode's electromechanical expansion and contraction during the lithiation and de-lithiation cycle. Embodiments include porous superstructures comprised of silicon carbide, tungsten, and other materials, many of which offer capability of lithiating.

Abstract: Methods and processes to fabricate thermoelectric materials and more particularly to methods and processes to fabricate nano-sized doped silicon-based semiconductive materials to use as thermoelectrics in the production of electricity from recovered waste heat. Substantially oxidant-free and doped silicon particulates are fractured and sintered to form a porous nano-sized silicon-based thermoelectric material.

Abstract: A method for fabricating a thermoelectric material comprising providing an initial feedstock of silicon metal particulates, providing an extracting liquid to extract oxidants from the silicon metal particulates, combining the silicon metal particulates and the extracting liquid into a mixture and milling said mixture, withdrawing at least a portion of the milled mixture, within the withdrawn portion of the milled mixture, separating milled silicon metal particulates from the extracting liquid, and mixing the milled silicon metal particulates with a dopant to form a thermoelectric material.

Abstract: A method of manufacturing a semiconductor includes providing a mold defining a planar capillary space; placing a measure of precursor in fluid communication with the capillary space; creating a vacuum around the mold and within the planar capillary space; melting the precursor; allowing the melted precursor to flow into the capillary space; and cooling the melted precursor within the mold such that the precursor forms a semiconductor, the operations of melting the precursor, allowing the precursor to flow into the capillary space, and cooling the melted precursor occurring in the vacuum.

Abstract: Methods and processes to fabricate thermoelectric materials and more particularly to methods and processes to fabricate nano-sized doped silicon-based semiconductive materials to use as thermoelectrics in the production of electricity from recovered waste heat. Substantially oxidant-free and doped silicon particulates are fractured and sintered to form a porous nano-sized silicon-based thermoelectric material.

Abstract: A tool useful in the manufacture of a semiconductor is disclosed. A mold is providing having an interior defining a planar capillary space. A coating substantially covers at least the planar capillary space of the graphite member. The coating is substantially non-reactive to silicon at temperatures greater than approximately 1420 degrees Centigrade.

Abstract: A thermoelectric semiconducting assembly. Two parallel plates, a first plate and a second plate, are spaced apart. A plurality of pellets are fitted into said first plate and into said second plate, each said pellet comprising a body, a first cap, and a second cap, said body including a silicon material, said first cap and said second cap including an electrically resistive ceramic material, each pellet in said second plate being connected to a pellet in said first plate. Each pellet includes a doped body, wherein half of said pellets are doped with a p-type dopant to form a p-type pellet and half of said pellets are doped with an n-type dopant to form an n-type pellet. Each plate includes p-type pellets and n-type pellets in an alternating pattern, and each p-type pellet in said first plate connects with an n-type pellet in said second plate, and wherein each n-type pellet in said first plate connects with a p-type pellet in said second plate.