Abstract: A Method and Apparatus for Randomizer has been disclosed. In one implementation a sequence of randomized connections then exclusive-OR operations and then an adder produce a randomized output.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: A method of resource-synchronizing data that is transmitted on a communication link having at least one data lane, between a first device and a second device, wherein the second device has a resource that is accessible based on an access schedule. In one operation, a timing offset of the second device based on the access schedule is determined, followed by delaying the transmission of data from the first device to the second device through the communication link by an amount of time equal to the timing offset so that the data is received at the resource when the resource is accessible according to the access schedule.

Abstract: A hybrid output driver includes a voltage mode main driver and a current mode emphasis driver that provides an adjustable differential output voltage swing. The current mode emphasis driver provides: push-pull swing control currents in response to a cursor data value, push-pull precursor currents in response to a precursor data value, and push-pull postcursor currents in response to a postcursor data value. In a normal operating mode, the swing control currents oppose voltages imposed by the voltage mode main driver on the differential output terminals. In a turbo operating mode, the swing control currents enhance voltages imposed by the voltage mode main driver on the differential output terminals.

Abstract: A memory device with background built-in self-testing (BBIST) includes a plurality of memory blocks; a memory buffer to offload data from one of the plurality of memory blocks temporarily; and a memory block stress controller to control a stress test applied to the one of the memory blocks when the data is temporarily offloaded on the memory buffer. The stress test tests for errors in the one of the plurality of the memory blocks.

Abstract: A memory system includes multiple (N) memory banks and multiple (M) ports, wherein N is greater than or equal to M. Each of the memory banks is coupled to each of the ports. Access requests are transmitted simultaneously on each of the ports. However, each of the simultaneous access requests specifies a different memory bank. Each memory bank monitors the access requests on the ports, and determines whether any of the access requests specify the memory bank. Upon determining that an access request specifies the memory bank, the memory bank performs an access to an array of single-port memory cells. Simultaneous accesses are performed in multiple memory banks, providing a bandwidth equal to the bandwidth of one memory bank times the number of ports. An additional level of hierarchy may be provided, which allows further multiplication of the number of simultaneously accessed ports, with minimal area overhead.

Abstract: An integrated circuit chip comprising at least one programmable built-in self-repair (PBISR) for repairing memory is described. The PBISR comprises an interface that receives signals external to the integrated chip. The PBISR further includes a port slave module that programs MBISR registers, program and instruction memory. The PBISR further comprises a programmable transaction engine and a programmable checker. Further, the MBISR comprises an eFUSE cache that implements logic to denote defective elements.

Abstract: A programmable characterization-debug-test engine (PCDTE) on an integrated circuit chip. The PCDTE includes an instruction memory that receives and stores instructions provided on a chip interface, and a configuration memory that receives and stores configuration values provided on the chip interface. The PCDTE also includes a controller that configures a plurality of address counters and data registers in response to the configuration values. The controller also executes the instructions, wherein read/write addresses and write data are retrieved from the counters in response to the instructions. The retrieved read/write addresses and write data are used to access a memory under test. Multiple ports of the memory under test may be simultaneously accessed. Multiple instructions may be linked. The instructions may specify special counting functions within the counters and/or specify integrated (linked) counters.

Abstract: A memory device that includes an input interface that receives instructions and input data on a first plurality of serial links. The memory device includes a memory block having a plurality of banks, wherein each of the banks has a plurality of memory cells, and wherein the memory block has multiple ports. An output interface provides data on a second plurality of serial links. A cache coupled to the IO interface and to the plurality of banks, stores write data designated for a given memory cell location when the given memory cell location is currently being accessed, thereby avoiding a collision. Memory device includes one or more memory access controllers (MACs) coupled to the memory block and one or more arithmetic logic units (ALUs) coupled to the MACs.

Abstract: A chip layout for a high speed semiconductor device is disclosed. The chip layout isolates Rx terminals and Rx ports from Tx terminals and Tx ports. A serial interface is centrally located to reduce latency, power and propagation delays. Stacked die that contain one or more devices with the chip layout are characterized by having improved latency, bandwidth, power consumption, and propagation delays.

Abstract: A chip layout for a high speed semiconductor device is disclosed. The chip layout isolates Rx terminals and Rx ports from Tx terminals and Tx ports. A serial interface is centrally located to reduce latency, power and propagation delays. Stacked die that contain one or more devices with the chip layout are characterized by having improved latency, bandwidth, power consumption, and propagation delays.

Abstract: A memory device with a background built-in self-repair module (BBISRM) includes a main memory, an arbiter, and a redundant memory to repair a target memory under test (TMUT). The memory device also includes a background built-in self-test module (BBISTM) to identify portions of memory needing background built-in self-repair (BBISR). The BBISRM or the BBISTM can operate simultaneously while the memory device is operational for performing external accesses during field operation. The BBISR can detect and correct a single data bit error in the data stored in the TMUT. The arbiter configured to receive a read or write access memory request including a memory address, to determine if the memory address of the read or write access memory request matches the memory address mapped to the selected portion of the redundant memory, and to read or write data from the selected portion of the redundant memory, respectively.

Abstract: A hybrid output driver includes a voltage mode main driver having an adjustable differential output voltage swing, and a current mode emphasis driver. Differential output voltage swing is adjusted by controlling the resistance of a first adjustable resistor coupled to a first voltage supply terminal, and the resistance of a second adjustable resistor coupled to a second voltage supply terminal. Resistances of the first and second adjustable resistors are adjusted by modifying a number of resistors connected in parallel. A calibration process measures the actual resistance of a similar resistor, and uses this resistance measurement to determine the number of resistors to be connected in parallel to provide the desired resistance. The current mode emphasis driver sources/sinks currents to/from differential output terminals of the hybrid output driver in response to an emphasis signal. These currents are selected in view of the selected differential output voltage swing and selected emphasis level.

Abstract: A system for increasing the efficiency of data transfer through a serializer-deserializer (SerDes) link, and for reducing data latency caused by differences between arrival times of the data on the SerDes link and the system clock with which the device operates.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: A delay-lock loop includes two feedback loops for controlling delay elements in the delay-lock loop. The first feedback loop includes a feedback circuit for generating a feedback signal indicating a delay adjustment based on a phase difference between an input clock signal to the delay-locked loop and an output clock signal generated by the delay-locked loop. The second feedback loop includes a power regulator that generates a regulated signal by regulating a power supply using the feedback signal as a reference. The delay-lock loop further includes a variable delay circuit including a resistor-capacitor network. The variable delay circuit controls a capacitance in the resistor-capacitor network based on the feedback signal and controls a resistance of the resistor-capacitor network based on the regulated signal. In this way, variable delay circuit generates the output clock signal by delaying the input clock signal based on both the feedback signal and the regulated signal.

Abstract: A memory system that includes a first bit line coupled to a first set of dynamic random access memory (DRAM) cells, a second (complementary) bit line coupled to a second set of DRAM cells, and a sense amplifier coupled to the first and second bit lines. The sense amplifier includes a pair of cross-coupled inverters (or a similar latching circuit) coupled between the first and second bit lines, as well as a first select transistor coupling the first bit line to a first global bit line, and a second select transistor coupling the second bit line to a second global bit line. The first and second select transistors are independently controlled, thereby enabling improved read and write access sequences to be implemented, whereby signal loss associated with bit line coupling is eliminated, ‘read bump’ conditions are eliminated, and late write conditions are eliminated.