Abstract: An electronic component includes an organic interposer (160, 460, 560, 660, 760, 860, 960), a semiconductor chip (220) mounted over the organic interposer, copper pads (250, 751, 851) under the organic interposer, a solder attachment (110, 510, 610, 910) between certain ones of the copper pads, and solder interconnects (120, 420) between certain other ones of the copper pads and located around an outer perimeter (111, 511, 911) of the solder attachment. The solder attachment is placed at locations within the electronic component that experience the greatest stress, which may include, for example, locations adjacent to at least a portion of a perimeter (221) of the semiconductor chip. In one embodiment, a surface area of the solder attachment is larger than a surface area of each one of the solder interconnects. In the same or another embodiment, the electronic component includes multiple solder attachments.

Abstract: A method and apparatus for using an interface and concomitant communication protocol to allow a host to control and communicate with a video decoder. More specifically, an interface structure having a status interface line and at least two data interface lines are employed between a video decoder and a host. The interface allows a communication protocol to effect communication and control of timing information, data transmission, and input and output selection.

Abstract: A microelectronic assembly (10) includes an integrated circuit die (12) mounted onto a substrate (14) by solder bump interconnections (32). The die (12) and the substrate (14) are spaced apart by a gap (30) that is filled with a polymeric encapsulant (16). The die (12) includes a die perimeter (24) and a face (27) facing away from the substrate (14). A polymeric reinforcement (18) is disposed onto the die face (27) to protect the die (12) and to reduce the effects of thermally induced stresses on the die (12) and the solder bump interconnections (32). The polymeric reinforcement (18) is spaced apart from the die perimeter (24) to maintain a desired peripheral fillet geometry of the encapsulant (16).

Abstract: Automated electrophoresis is performed by applying a cover plate to a substrate having a plurality of electrophoresis lanes, applying at least one sample to the plurality of electrophoresis lanes, electrophoresing the at least one sample, removing the cover plate from the substrate, and washing the substrate. Thereafter, the aforementioned steps are repeated using the same substrate.

Abstract: A microelectronic assembly (10) includes an integrated circuit component (14) attached to a polymeric substrate (12) by a plurality of unencapsulated solder bump interconnections (16). A collar (18) is affixed to the polymeric substrate (12) about the integrated circuit component (14) and is formed of an inorganic material having a coefficient of thermal expansion less than that of the substrate (12). The collar (18) constrains thermal expansion of the polymeric substrate (12) in the die attach region (22), thereby lessening any deleterious effects caused by a mismatch in the thermal expansion of the polymeric substrate (12) and the integrated circuit component (14).

Abstract: A microelectronic package (10) is formed by placing a lead frame (22) onto an adhesive polyimide tape (38). The lead frame (22) includes a plurality of metallic leads (16) and an opening. An integrated circuit die (12) is positioned onto the molding support (38) within the opening such that a non-active face (32) of the integrated circuit die (12) rests against the molding support (38). Wire leads (18) connect an active face (28) of the integrated circuit die (12) to the metallic leads (16). A plurality of metallic bumps (20) are attached to the metallic leads (16), and a polymeric precursor is dispensed. The precursor embeds the active face (28) of the integrated circuit die (12), the inner surface (19) of the metallic leads (16), the wire leads (18), and the metallic bumps (20). The microelectronic package (10) is then heated to cure the polymeric precursor to form a polymeric body (14).

Abstract: Solder paste (16) is dispensed onto a platen (12) that includes depressions (14) that are preferably conical or in an inverted pyramid shape. The solder paste (16) is formed of a plurality of particles composed of a solder alloy. Excess solder paste (16) is removed, and a predetermined solder paste volume fills the depressions (14). A substrate (18) is superposed onto platen (12) such that solder-wettable bond pads (20) on the substrate (18) register with the depressions (14). The platen (12) is heated to melt the solder alloy, and the solder alloy coalesces to form molten solder droplets (22). The solder droplets (22) are transferred onto the solder-wettable bond pads (20) to form solder bumps (24) bonded to the bond pads (20).

Abstract: Binding of a molecule to a molecular receptor is sensed using a transistor having a gate located at a binding site. The channel conductance of the transistor is modified by a charge associated with the molecule when the molecule binds with the molecular receptor. A modified electrical characteristic of the transistor which results is sensed to sense the binding event. Electric field enhancement is provided by applying a voltage to the gate. A second sensing transistor can be coupled to the sensing transistor to form a differential pair. The differential pair allows for enhancing and sensing of differential binding events.

Abstract: A distributed transmission line structure (10) includes a ground plane (26) affixed to a substrate (12). The substrate (12) is formed of a generally nonconductive material. A first metallic strip (14) is affixed to the substrate (12) and is electrically connected to the ground plane (26) through a first through-hole (34). A second metallic strip (16) is affixed to the substrate (12) and is spaced apart from the first metallic strip (14) by a gap (28) and is electrically connected to the ground plane (26) through a second through-hole (38). A dielectric layer (20) overlies the substrate (12), the first metallic strip (14), and the second metallic strip (16). A third metallic strip (18) is affixed to the dielectric layer (20) and is disposed to overlie the gap (28). The third metallic strip (18) has a width less than the gap (28). The impedance of the distributed transmission line structure (10) is substantially constant over a predetermined range of thickness of the dielectric layer (20).