Abstract: A defect-reducing coating method is disclosed, which is characterized by making the coating surface of a sample face the bottom of the coating chamber, so that the sticking particles on side walls of the coating chamber will not fall on the coating surface of the sample during the coating process, thereby a smooth coating layer can be formed on the coating surface of the sample after the coating process is finished.

Abstract: The present invention discloses a method for preparing a semiconductor sample for failure analysis, which is characterized by using an adhesive layer comprising a non-volatile and non-liquid adhesive material with higher adhesion to the dielectric materials and lower adhesion to the metallic contact materials to selectively remove part of the dielectric materials in a large area with high uniformity, but completely remain the metallic contact materials, and not chemically react with the semiconductor specimens or even damage to the structures of interest to be analyzed, and different adhesive materials can be selected as the adhesive layer to control the adhesion to the dielectric layer, thereby the removed thickness of the dielectric layer can be controlled to provide a semiconductor specimen for failure analysis.

Abstract: The present invention discloses a method of preparing a specimen for scanning capacitance microscopy, comprising the steps of: providing a sample including at least one object to be analyzed; manually grinding the sample from an edge of the sample toward a target region containing the object to be analyzed gradually, and stopping at a distance of dl from a longitudinal section of the at least one object to be analyzed in the target region to form a grinding stopping surface; cutting the grinding stopping surface by a plasma focused ion beam equipped with a scanning electron microscopy toward the target region and stopping at a distance of d2 from the longitudinal section to form a cutting stopping surface, wherein 0<d2<d1; and manually grinding to polish the cutting stopping surface and gradually remove the part of the sample between the longitudinal section and the cutting stopping surface to expose the longitudinal section of the at least one object to be analyzed, and complete the preparation of a sp

Abstract: The present invention discloses a method of preparing a specimen for scanning capacitance microscopy, comprising the steps of: providing a sample including at least one object to be analyzed; manually grinding the sample from an edge of the sample toward a target region containing the object to be analyzed gradually, and stopping at a distance of dl from a longitudinal section of the at least one object to be analyzed in the target region to form a grinding stopping surface; cutting the grinding stopping surface by a plasma focused ion beam equipped with a scanning electron microscopy toward the target region and stopping at a distance of d2 from the longitudinal section to form a cutting stopping surface, wherein 0<d2<d1; and manually grinding to polish the cutting stopping surface and gradually remove the part of the sample between the longitudinal section and the cutting stopping surface to expose the longitudinal section of the at least one object to be analyzed, and complete the preparation of a sp

Abstract: This inventions provides an artificial intelligence (A.I.) identified measuring method for a semiconductor image, comprising the steps of: providing an original image of a semiconductor; identifying a type and/or a category of the original image by an artificial intelligence; introducing a predetermined dimension measuring mode corresponding to the identified type and/or the identified category to scan the original image to generate a measurement signal of the original image; and extracting a designated object from the original image to generate a specific physical parameter of the original image after operation based on a measurement signal of the designated object and the measurement signal of the original image.

Abstract: The present invention discloses a method for preparing a semiconductor sample for failure analysis, which is characterized by using an adhesive layer comprising a non-volatile and non-liquid adhesive material with higher adhesion to the dielectric materials and lower adhesion to the metallic contact materials to selectively remove part of the dielectric materials in a large area with high uniformity, but completely remain the metallic contact materials, and not chemically react with the semiconductor specimens or even damage to the structures of interest to be analyzed, and different adhesive materials can be selected as the adhesive layer to control the adhesion to the dielectric layer, thereby the removed thickness of the dielectric layer can be controlled to provide a semiconductor specimen for failure analysis.

Abstract: The present invention provides a remote control method of sample preparation and/or sample analysis, which is characterized by synchronously operating a control apparatus in a guest system comprising a sample preparation apparatus and/or sample analysis apparatus through a host computer installed with a remote control software in a host system when the control apparatus in the host system is operated, therefore the sample preparation apparatus and/or sample analysis apparatus can be performed through the synchronously operated control apparatus in the guest system.

Abstract: This inventions provides an artificial intelligence (A.I.) identified measuring method for a semiconductor image, comprising the steps of: providing an original image of a semiconductor; identifying a type and/or a category of the original image by an artificial intelligence; introducing a predetermined dimension measuring mode corresponding to the identified type and/or the identified category to scan the original image to generate a measurement signal of the original image; and extracting a designated object from the original image to generate a specific physical parameter of the original image after operation based on a measurement signal of the designated object and the measurement signal of the original image.