Patents Assigned to Nanmat Technology Co. Ltd.
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Patent number: 8926745Abstract: A method for preparing a low dielectric constant (low k) material and a film thereof is provided. The method includes the following steps. A substrate is first put into a plasma generating reaction system, and a carrier gas carrying a carbon and fluorine containing silicon dioxide precursor is then introduced into the plasma generating reaction system, so that the carbon and fluorine containing silicon dioxide precursor is formed on the substrate. After that, the carbon and fluorine containing silicon dioxide precursor is converted to a low k material film through heating; meanwhile, a stress of the low k material film is eliminated such that the film has a more compact structure. By means of these steps the carbon and fluorine containing silicon dioxide precursor is still capable of forming a low k material film of silicon dioxide containing a large amount of fluorocarbon, even under various different atmospheres.Type: GrantFiled: September 23, 2011Date of Patent: January 6, 2015Assignee: Nanmat Technology Co., Ltd.Inventors: Cheng-Jye Chu, Chih-Hung Chen
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Publication number: 20140072479Abstract: The present invention discloses a delivery equipment for the solid precursor particles, which is applied to the deposition of thin film. The delivery equipment for the solid precursor particles mainly comprises a container, a feeding material inlet, a feeding material tube, a feeding gas inlet, a feeding gas tube, and an output. A plurality of solid precursor particles are stored in the carrier liquid of the container, and then heated to be vapor, removed through the output of the container. The solid precursor particles are prepared by sublimation or grounding and uniformly dispersed in the carrier liquid. The disclosed delivery equipment for the solid precursor particles can reduce the required heating temperature, increase the thermal stability, prolong the used life time, and then increase the using efficiency of the precursors.Type: ApplicationFiled: November 5, 2012Publication date: March 13, 2014Applicant: NANMAT TECHNOLOGY CO., LTD.Inventors: Cheng-Jye CHU, Yu-Chen ZHENG, Chih-Hung CHEN, Chi-Hui LIN, Meng-Chung CHEN
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Publication number: 20130143402Abstract: The disclosure provides a method for forming a dense Cu thin film by atomic layer deposition, comprising the following steps of: (A) providing an additive gas; (B) choosing a copper-containing metal-organic complex as a precursor; (C) using a carrier gas to introduce the additive gas into the precursor cell mixing with the precursor; (D) pre-depositing the precursor on the surface of the substrate with a TaNx thin film at a first temperature; (E) removing the excess copper-containing metal-organic complex and the excess additive gas; (F) introducing a reducing gas into the reactive system and annealing at a second temperature to reduce the Cu2O thin film to form a Cu thin film on the substrate and (G) removing the excess reducing gas from the reactive system.Type: ApplicationFiled: February 15, 2013Publication date: June 6, 2013Applicant: NANMAT TECHNOLOGY CO., LTD.Inventor: Nanmat Technology Co., Ltd.
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Publication number: 20040168712Abstract: This invention is a method for cleaning a semiconductor manufacturing system, which passes a highly volatile liquid agent through the system to remove the impurities and to dissolve chemicals used in the system. The cleaning agent dissolves and washes the chemicals out of the system to keep the chemicals from combining with moisture in the air and forming oxide particles. By washing with a liquid, residual gases and impurities in the system are rapidly removed from the system. After washing the system, the cleaning agent is quickly dried because the cleaning agent is highly volatile. Thereby, the system is cleaned efficiently within a short time by using this method.Type: ApplicationFiled: February 26, 2004Publication date: September 2, 2004Applicant: Nanmat Technology Co., Ltd.Inventors: Wei-Sheng Chao, Chi-Hui Lin, Chuang-I Chen, Goang-Cheng Chang, Chao-Kai Hsieh, Hsin-Cheng Huang, Cheng-Jye Chu
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Patent number: 6734686Abstract: This invention relates to a method for detecting quantity variation of high purity liquid chemicals by way of detecting capacitance variation to determine the liquid level of liquid chemicals. Meanwhile, the ratio of the area of the smallest electrode of the capacitor to the distance between the electrodes is adjusted to magnify the capacitance so that a very small variation can be observed clearly. This invention also discloses a device to carry out this method.Type: GrantFiled: April 8, 2002Date of Patent: May 11, 2004Assignee: Nanmat Technology Co. Ltd.Inventors: Chi-Hui Lin, Cheng-Jye Chu, Pai-Mou Lee, Goang-Cheng Chang
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Publication number: 20030189433Abstract: This invention relatives to a method for detecting quantity variation of high purity liquid chemicals by way of detecting capacitance variation to determine the liquid level of liquid chemicals. Meanwhile, the ratio of the area of the smallest electrode of the capacitor to the distance between the electrodes is adjusted to magnify the capacitance so that a very small variation can be observed clearly. This invention also discloses a device to carry out this method.Type: ApplicationFiled: April 8, 2002Publication date: October 9, 2003Applicant: Nanmat Technology Co., Ltd.Inventors: Chi-Hui Lin, Cheng-Jye Chu, Pai-Mou Lee, Goang-Cheng Chang