Abstract: In one aspect, a method includes forming a pit in a top surface of a substrate by removing a portion of the substrate and growing a semiconductor material with a bottom surface on the pit, the semiconductor material different than the material of the substrate. The pit has a base recessed in the top surface of the substrate. In another aspect, a structure includes a substrate having a top surface, the substrate including at least one pit having a base lower than the top surface of the substrate, and a semiconductor material having a bottom surface formed on the base of the pit.
Type:
Application
Filed:
October 17, 2008
Publication date:
April 23, 2009
Applicant:
Nano Photonics, Inc.
Inventors:
Liang Chen, Chingyin Hong, Fuwan Gan, Dong Pan