Abstract: A pattern inspection apparatus is used for inspecting a pattern, such as semiconductor integrated circuit (LSI), liquid crystal panel, and a photomask by using an image of the pattern to-be-inspected and design data for fabricating the pattern to-be-inspected. The pattern inspection apparatus includes a reference pattern generation device for generating a reference pattern represented by one or more lines from design data, an image generation device for generating the image of the pattern to-be-inspected, a detecting device for detecting an edge of the image of the pattern to-be-inspected, and an inspection device for inspecting the pattern to-be-inspected by comparing the edge of the image of the pattern to-be-inspected with the one or more lines of the reference pattern.

Abstract: A fine pattern, such as a semiconductor integrated circuit (LSI), a liquid crystal panel, and a photomask (reticle) for the semiconductor or the liquid crystal panel, which are fabricated based on data for fabricating the fine pattern such as design data is inspected by a pattern inspection apparatus. The pattern inspection apparatus for inspecting a pattern to-be-inspected uses an image of the pattern to-be-inspected and data for fabricating the pattern to-be-inspected.

Abstract: First, a pattern inspection apparatus detects the first edge from an image of a pattern to-be-inspected. Next, the pattern inspection apparatus conducts matching of the image of the pattern to-be-inspected and the first reference pattern by comparing the first edge and an edge of the first reference pattern. Since, as a result of the matching, a shift quantity S1 can be obtained, and then the first reference pattern is shifted by this shift quantity S1. Subsequently the pattern to-be-inspected is inspected by comparing the first edge and the edge of the first reference pattern so shifted. In this first inspection, pattern deformation quantities are obtained and defects are detected. A shift quantity S2 can be obtained as one of the pattern deformation quantities. Next, in order to detect the second edge from the pattern image to-be-inspected, the corresponding second reference pattern is shifted by a shift quantity S1+S2.

Abstract: First, a pattern inspection apparatus detects the first edge from an image of a pattern to-be-inspected. Next, the pattern inspection apparatus conducts matching of the image of the pattern to-be-inspected and the first reference pattern by comparing the first edge and an edge of the first reference pattern. Since, as a result of the matching, a shift quantity S1 can be obtained, and then the first reference pattern is shifted by this shift quantity S1. Subsequently the pattern to-be-inspected is inspected by comparing the first edge and the edge of the first reference pattern so shifted. In this first inspection, pattern deformation quantities are obtained and defects are detected. A shift quantity S2 can be obtained as one of the pattern deformation quantities. Next, in order to detect the second edge from the pattern image to-be-inspected, the corresponding second reference pattern is shifted by a shift quantity S1+S2.