Abstract: The invention relates to a semiconductor laser having at least one semiconductor substrate (10), at least one active layer (20) arranged on the semiconductor substrate (10) which generates radiation in a wavelength region, at least one laser mirror (40) which is applied at one end of the active layer (20) perpendicular thereto, through which a part of the radiation generated in the active layer (20) emerges, and which is provided with a layer of absorbing material (50, 60) said layer being suitable for reducing a gradient of the luminous-power/current characteristic for radiation emerging through the laser mirror (40).

Abstract: The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate (10), at least one active layer (40) that is arranged on the semiconductor substrate, at least one ridge (70) that is arranged above the active layer (40), at least one periodic surface structure (110) that is arranged next to the ridge (70) above the active layer (40) and at least one wave guide layer (30, 50) comprising a thickness ?1 ?m that is arranged below and/or above the active layer.

Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

Abstract: A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a semiconducting substrate. The unipolar semiconductor laser comprises a raised ridge section running from end to end between end mirrors defining the laser cavity. The ridge section aids in optical and electrical confinement. The ridge waveguide is divided in a plurality of cavity segments (at least two). Lattice structures can be arranged on and/or adjacent to these cavity segments. Each cavity segment is in contact with upper metallic electrodes. A metallic electrode coupled to the bottom surface of the semiconducting substrate facilitates current injection through the device.

Abstract: Disclosed is a semiconductor laser in which the substrate comprises at least three independent functional sections in the direction of light wave propagation, said functional sections serving different functions and being individually triggered by means of electrodes via electrode leads. An intensification zone, a grid zone, and a phase adjustment zone are provided as functional sections. The light wave is optically intensified in the intensification zone while the phase of the advancing and returning wave is adjusted in the phase adjustment zone. The grid zone is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone and the phase adjustment zone.

Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

Abstract: A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a semiconducting substrate. The unipolar semiconductor laser comprises a raised ridge section running from end to end between end mirrors defining the laser cavity. The ridge section aids in optical and electrical confinement. The ridge waveguide is divided in a plurality of cavity segments (at least two). Lattice structures can be arranged on and/or adjacent to these cavity segments. Each cavity segment is in contact with upper metallic electrodes. A metallic electrode coupled to the bottom surface of the semiconducting substrate facilitates current injection through the device.

Abstract: A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a semiconducting substrate. The unipolar semiconductor laser comprises a raised ridge section running from end to end between end mirrors defining the laser cavity. The ridge section aids in optical and electrical confinement. The ridge waveguide is divided in a plurality of cavity segments (at least two). Lattice structures can be arranged on and/or adjacent to these cavity segments. Each cavity segment is in contact with upper metallic electrodes. A metallic electrode coupled to the bottom surface of the semiconducting substrate facilitates current injection through the device.

Abstract: The present invention relates to laser diodes with single mode emission at high output powers, as well as to structures and processes facilitating simple manufacture of such a devices. The invention includes a semiconductor laser (10) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, an array of waveguide ridges (18) arranged at a distance from the laser layer, and several strip-shaped lattice structures (23) arranged on the flat surface between the waveguide ridges. The lattice structure (23) is formed on an insulating or barrier layer (26) at a distance from the laser layer above the laser layer (13). Processes for the production of such a semiconductor laser are also disclosed.

Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.