Patents Assigned to Nanostructures, Inc.
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Patent number: 11589872Abstract: A deployable occlusion device for filling an aneurysm. The occlusion device includes a support structure, for example a wire or otherwise elongate structure. The occlusion device also includes a mesh component having a porosity. The mesh component has a first end portion and a second end portion. The first end portion of the mesh component is attached to the support structure and the second end portion of the mesh component is a free end. The mesh component extends from the support structure.Type: GrantFiled: January 29, 2019Date of Patent: February 28, 2023Assignee: Nanostructures, Inc.Inventor: Philip Mauger
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Patent number: 11517321Abstract: The present disclosure is related to an occlusion device having a mesh structure. The occlusion device configured to transition between a two-dimensional configuration and a three-dimensional configuration. In the two-dimensional configuration and at rest, the occlusion device is flat or planar. In the three-dimensional configuration, the occlusion device defines an internal volume.Type: GrantFiled: May 25, 2017Date of Patent: December 6, 2022Assignee: Nanostructures, Inc.Inventors: Philip Mauger, Michael Williamson, Mark Alan Adler, Justin Allen Payne
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Patent number: 10352781Abstract: A calibration device including a thermal sensing device, and a reference heater, where the heater and the sensing device are integrated together, the heater and the sensing have at least one dimension substantially in common, and the over all dimensions are in the range of thermal micro probes, 100 nm-500 microns.Type: GrantFiled: January 20, 2015Date of Patent: July 16, 2019Assignee: APPLIED NANOSTRUCTURES, INC.Inventors: Gary D. Aden, Josiah F. Willard
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Patent number: 9389244Abstract: A scanning probe assembly having a nanometer sensor element defined at a tip apex and its method of fabrication using micro-electromechanical systems (MEMS) processing techniques. The assembly comprises a probe body, a cantilever extending outward, and a hollow tip at the end of the cantilever. A first conductive material is disposed on the hollow tip, followed by a dielectric layer thus embedding the conductive layer. A nanometer hole is milled through the tip, first conductor and dielectric materials. A metal sensor element is deposited by means of electrochemical deposition in the through-hole. A second conductor is deposited on a lower layer. The first and second conductors form electrical connections to the sensor element in the tip. The intra-tip metal, in combination with other layers, may form a thermocouple, thermistor, Schottky diode, ultramicroelectrode, or Hall Effect sensor, and used as a precursor to grow spikes such a nanotubes.Type: GrantFiled: May 6, 2014Date of Patent: July 12, 2016Assignee: Applied Nanostructures, Inc.Inventors: Jeremy J. Goeckeritz, Gary D. Aden, Ami Chand, Josiah F. Willard
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Publication number: 20150204734Abstract: A calibration device including a thermal sensing device, and a reference heater, where the heater and the sensing device are integrated together, the heater and the sensing have at least one dimension substantially in common, and the over all dimensions are in the range of thermal micro probes, 100 nm-500 microns.Type: ApplicationFiled: January 20, 2015Publication date: July 23, 2015Applicant: APPLIED NANOSTRUCTURES, INCInventors: Gary D. Aden, Josiah F. Willard
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Publication number: 20140338075Abstract: A scanning probe assembly having a nanometer sensor element defined at a tip apex and its method of fabrication using micro-electromechanical systems (MEMS) processing techniques. The assembly comprises a probe body, a cantilever extending outward, and a hollow tip at the end of the cantilever. A first conductive material is disposed on the hollow tip, followed by a dielectric layer thus embedding the conductive layer. A nanometer hole is milled through the tip, first conductor and dielectric materials. A metal sensor element is deposited by means of electrochemical deposition in the through-hole. A second conductor is deposited on a lower layer. The first and second conductors form electrical connections to the sensor element in the tip. The intra-tip metal, in combination with other layers, may form a thermocouple, thermistor, Schottky diode, ultramicroelectrode, or Hall Effect sensor, and used as a precursor to grow spikes such a nanotubes.Type: ApplicationFiled: May 6, 2014Publication date: November 13, 2014Applicant: APPLIED NANOSTRUCTURES, INC.Inventors: Jeremy J. Goeckeritz, Gary D. Aden, Ami Chand, Josiah F. Willard
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Patent number: 8828243Abstract: A cantilever-tip assembly for atomic force microscopy (AFM) or other scanning probe microscopy and its method of making based on micro-electromechanical systems (MEMS). Two crystalline silicon wafers and attached oxide and nitride layers are bonded together across an intermediate dielectric layer. A thin cantilever with a tetrahedral silicon probe tip at its distal end are formed in one wafer by anisotropic etching of silicon and a support structure is formed in the other wafer to support the proximal end of the cantilever preferably having an inclined face formed by anisotropic silicon etching. The cantilever may be silicon or silicon nitride.Type: GrantFiled: September 2, 2010Date of Patent: September 9, 2014Assignee: Applied Nanostructures, Inc.Inventors: Rakesh Poddar, Ami Chand
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Patent number: 8397555Abstract: The present invention is directed to scanning probes in which a cantilever contacts a stylus via an integrated stylus base pad, and methods for fabricating such probes. The probe offer many advantages over other types of scanning probes with respect to eliminating the need for a soft, reflective coating in some applications and providing for the simple fabrication of sharp stylus tips, flexibility with respect to functionalizing the tip, and minimal thermal drift due to reduced bimorph effect. The advantage of these features facilitates the acquisition of high resolution images of samples in general, and particularly in liquids.Type: GrantFiled: February 28, 2011Date of Patent: March 19, 2013Assignee: Applied NanoStructures, Inc.Inventor: Ami Chand
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Publication number: 20120060244Abstract: A cantilever-tip assembly for atomic force microscopy (AFM) or other scanning probe microscopy and its method of making based on micro-electromechanical systems (MEMS). Two crystalline silicon wafers and attached oxide and nitride layers are bonded together across an intermediate dielectric layer. A thin cantilever with a tetrahedral silicon probe tip at its distal end are formed in one wafer by anisotropic etching of silicon and a support structure is formed in the other wafer to support the proximal end of the cantilever preferably having an inclined face formed by anisotropic silicon etching. The cantilever may be silicon or silicon nitride.Type: ApplicationFiled: September 2, 2010Publication date: March 8, 2012Applicant: APPLIED NANOSTRUCTURES, INC.Inventors: Rakesh Poddar, Ami Chand
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Patent number: 8003534Abstract: An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.Type: GrantFiled: December 28, 2010Date of Patent: August 23, 2011Assignee: Applied Nanostructures, Inc.Inventor: Ami Chand
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Publication number: 20110092046Abstract: An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.Type: ApplicationFiled: December 28, 2010Publication date: April 21, 2011Applicant: APPLIED NANOSTRUCTURES, INC.Inventor: Ami Chand
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Patent number: 7913544Abstract: The present invention is directed to scanning probes in which a cantilever contacts a stylus via an integrated stylus base pad, and methods for fabricating such probes. The probe offer many advantages over other types of scanning probes with respect to eliminating the need for a soft, reflective coating in some applications and providing for the simple fabrication of sharp stylus tips, flexibility with respect to functionalizing the tip, and minimal thermal drift due to reduced bimorph effect. The advantage of these features facilitates the acquisition of high resolution images of samples in general, and particularly in liquids.Type: GrantFiled: November 15, 2007Date of Patent: March 29, 2011Assignee: Applied NanoStructures, Inc.Inventor: Ami Chand
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Patent number: 7884445Abstract: An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.Type: GrantFiled: November 22, 2006Date of Patent: February 8, 2011Assignee: Applied Nanostructures, Inc.Inventor: Ami Chand
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Publication number: 20080116533Abstract: An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.Type: ApplicationFiled: November 22, 2006Publication date: May 22, 2008Applicant: Applied NanoStructures, Inc.Inventor: Ami Chand
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Patent number: 5110373Abstract: A method for fabricating a silicon membrane with predetermined stress characteristics. A silicon substrate is doped to create a doped layer as thick as the desired thickness of the membrane. Stress within the doped layer is controlled by selecting the dopant based on its atomic diameter relative to silicon and controlling both the total concentration and concentration profile of the dopant. The membrane is then formed by electrochemically etching away the substrate beneath the doped layer.Type: GrantFiled: August 9, 1990Date of Patent: May 5, 1992Assignee: Nanostructures, Inc.Inventor: Philip E. Mauger
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Patent number: 4966663Abstract: A method for fabricating a silicon membrane with predetermined stress characteristics. A silicon substrate is doped to create a doped layer as thick as the desired thickness of the membrane. Stress within the doped layer is controlled by selecting the dopant based on its atomic diameter relative to silicon and controlling both the total concentration and concentration profile of the dopant. The membrane is then formed by electrochemically etching away the substrate beneath the doped layer.Type: GrantFiled: September 13, 1988Date of Patent: October 30, 1990Assignee: Nanostructures, Inc.Inventor: Philip E. Mauger
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Patent number: 4919749Abstract: A high resolution shadow mask with low pattern distortion is formed from a silicon membrane with a pattern of apertures etched through the membrane by reactive ion etching using a silicon dioxide masking layer. To achieve low distortion over a large area membrane, the stress of the membrane and the masking layer is controlled to remain within an optimal range so that the stress relief that occurs when the apertures are formed is kept negligibly small. A silicon membrane with controlled stress is made using a p/n junction electrochemical etch-stop process. After making the membrane, it is then coated with a deposited silicon dioxide layer. The stress of the oxide layer may be adjusted to an optimum value by annealing after deposition. The membrane with the oxide mask layer is next coated with a photoresist layer which is then patterned with the desired shadow mask pattern. Once the photoresist is patterned, the pattern is then transferred into the oxide layer by reactive ion etching.Type: GrantFiled: May 26, 1989Date of Patent: April 24, 1990Assignee: Nanostructures, Inc.Inventors: Philip E. Mauger, Alex R. Shimkunas, Junling J. Yen