Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.
Type:
Grant
Filed:
August 24, 2020
Date of Patent:
March 1, 2022
Assignee:
NANOSYS, INC.
Inventors:
Zhen Chen, Fariba Danesh, Fan Ren, Shuke Yan
Abstract: A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30% of the electrically active region.
Type:
Grant
Filed:
November 15, 2019
Date of Patent:
March 1, 2022
Assignee:
NANOSYS, INC.
Inventors:
Max Batres, Fariba Danesh, Michael J. Cich, Zhen Chen
Abstract: A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.
Type:
Grant
Filed:
April 10, 2019
Date of Patent:
February 22, 2022
Assignee:
NANOSYS, INC.
Inventors:
Richard P. Schneider, Jr., Benjamin Leung, Fariba Danesh, Zulal Tezcan Ozel, Miao-Chan Tsai
Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
Type:
Application
Filed:
September 16, 2021
Publication date:
February 10, 2022
Applicant:
Nanosys, Inc.
Inventors:
Robert S. DUBROW, William P. FREEMAN, Ernest LEE, Paul FURUTA
Abstract: A light emitting device includes a backplane, an array of light emitting diodes attached to a front side of the backplane, a transparent conductive layer contacting front side surfaces of the light emitting diodes, an optical bonding layer located over a front side surface of the transparent conductive layer, a transparent cover plate located over a front side surface of the optical bonding layer, and a black matrix layer including an array of openings therethrough, and located between the optical bonding layer and the transparent cover plate.
Abstract: Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.
Type:
Application
Filed:
September 13, 2021
Publication date:
December 30, 2021
Applicant:
Nanosys, Inc.
Inventors:
Emma Rose DOHNER, Yeewah Annie CHOW, Wenzhuo GUO, Christian Justus IPPEN, Jason Travis TILLMAN, Jonathan Andrew TRUSKIER
Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
Type:
Grant
Filed:
December 10, 2020
Date of Patent:
December 14, 2021
Assignee:
NANOSYS, Inc.
Inventors:
Robert S. Dubrow, William P. Freeman, Ernest Lee, Paul Furuta
Abstract: Illumination devices based on quantum dot technology and methods of making such devices are described. An illumination device includes a substrate having a plurality of microLEDs, a beam splitter, and a film having a plurality of quantum dots. The beam splitter includes a plurality of layers and is disposed between the substrate and the film having the plurality of quantum dots.
Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
Type:
Application
Filed:
July 22, 2021
Publication date:
November 11, 2021
Applicant:
Nanosys, Inc.
Inventors:
Robert S. DUBROW, William P. FREEMAN, Ernest LEE, Paul FURUTA
Abstract: A method of repairing a light emitting device assembly includes providing a repair source substrate with an array of first light emitting diodes, providing a first carrier substrate with a temporary adhesive layer thereupon, forming a first assembly including the first carrier substrate and at least one first light emitting diode that is a subset of the array of first light emitting diodes, where the at least one first light emitting diode is attached to the first carrier substrate through a respective portion of the temporary adhesive layer and detached from the repair source substrate, providing a second carrier substrate with a temporary bonding layer thereupon, attaching the at least one first light emitting diode to the temporary bonding layer, detaching the first carrier substrate from each portion of the temporary adhesive layer, removing each portion of the temporary adhesive layer from the at least one first light emitting diode, providing a light emitting device including at least one vacancy locati
Abstract: Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.
Type:
Grant
Filed:
May 8, 2019
Date of Patent:
September 14, 2021
Assignee:
Nanosys, Inc.
Inventors:
Emma Rose Dohner, Yeewah Annie Chow, Wenzhuo Guo, Christian Justus Ippen, Jason Travis Tillman, Jonathan Andrew Truskier
Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using a Group IV metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
Type:
Application
Filed:
March 3, 2021
Publication date:
September 9, 2021
Applicant:
Nanosys, Inc.
Inventors:
Benjamin NEWMEYER, Christian IPPEN, Jesse MANDERS, Ruiqing MA, Dylan Charles HAMILTON
Abstract: The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnTe core and CdS, CdSe, CdTe, ZnS, ZnSe, or ZnTe shell layers. The nanostructures show strong absorbance at 450 nm and have a high OD450/mass ratio. The invention also relates to methods of producing such nanostructures.
Type:
Grant
Filed:
January 24, 2020
Date of Patent:
August 31, 2021
Assignee:
Nanosys, Inc.
Inventors:
Ashenafi Damtew Mamuye, Christopher Sunderland, Chunming Wang
Abstract: Embodiments of a display device are described. The display device includes a first sub-pixel with a first quantum dot (QD) film and a first filter element. The QD film receives both UV light and blue light and converts a portion of the received light to emit a secondary light different from the UV and blue light. The filter element is disposed on the quantum dot film and allows the secondary light to pass through the filter element, and the filter element blocks an unconverted portion of the received light from passing through the filter element. The second sub-pixel has a second filter element that allows blue light to pass through the second filter element, and the second filter element blocks the UV light from passing through the second filter element.
Type:
Grant
Filed:
August 22, 2018
Date of Patent:
August 17, 2021
Assignee:
Nanosys, Inc.
Inventors:
Ernest C. Lee, Charlie Hotz, Jason Hartlove
Abstract: The present invention provides methods for hermetically sealing luminescent nanocrystals, as well as compositions and containers comprising hermetically sealed luminescent nanocrystals. By hermetically sealing the luminescent nanocrystals, enhanced lifetime and luminescence can be achieved.
Abstract: The invention relates to highly luminescent nanostructures with strong blue light absorbance, particularly core/shell nanostructures comprising an In(1-x)GaxP core and ZnSe and/or ZnS shell layers, wherein 0<x<1. The invention also relates to methods of producing such nanostructures.
Type:
Grant
Filed:
February 5, 2020
Date of Patent:
July 6, 2021
Assignee:
NANOSYS, INC.
Inventors:
John J. Curley, Alexander Tu, Wenzhou Guo, Chunming Wang, Christian Ippen, Charles Hotz
Abstract: The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one poly(alkylene oxide) ligand bound to the surface of the nanostructures, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.
Type:
Grant
Filed:
August 16, 2018
Date of Patent:
June 22, 2021
Assignee:
Nanosys, Inc.
Inventors:
Ravisubhash Tangirala, Shihai Kan, Jay Yamanaga, Charles Hotz, Donald Zehnder
Abstract: Embodiments of a display device are described. A display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The LCD module includes a phosphor film and a filter element. The phosphor film is configured to receive a primary light, from the light source, having a first peak wavelength and to convert a portion of the primary light to emit a secondary light having a second peak wavelength. The second peak wavelength is different from the first peak wavelength. The filter element is optically coupled to the phosphor film and is configured to allow the secondary light to pass through the filter element and to block an unconverted portion of the primary light from passing through the filter element.
Type:
Grant
Filed:
August 22, 2018
Date of Patent:
June 8, 2021
Assignee:
Nanosys, Inc.
Inventors:
Ernest C. Lee, Jason Hartlove, Shihai Kan, Jian Chen
Abstract: The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising thiol-functionalized ligands to increase the stability of the composition in thiol resins. The present invention also provides nanostructure films comprising a population of nanostructures comprising thiol-functionalized ligands and methods of making nanostructure films using these nanostructures.
Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
Type:
Application
Filed:
December 10, 2020
Publication date:
May 6, 2021
Applicant:
Nanosys, Inc.
Inventors:
Robert S. DUBROW, William P. FREEMAN, Ernest LEE, Paul FURUTA