Patents Assigned to Nat Inst of Adv Industrial Sci and Tech
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Publication number: 20120097751Abstract: The present invention provides a low environmental burden type coating method using carbon dioxide and a coating device therefor that carry out carbon dioxide coating in which carbon dioxide is substituted for all or a portion of a diluent solvent (thinner) used in organic solvent-based spray coating, the coating method being configured to prevent deposition of a polymer of a paint component that has entered as a result of backflow by preliminarily adding, to carbon dioxide, a true solvent component of the paint in at least an amount required for saturated solubility (20% to 50% per weight of carbon dioxide) to lower the dissolving power of carbon dioxide with respect to the true solvent component. According to the present invention, it is possible to provide a coating method and a device therefor capable of considerably reducing VOC generation, and a coating method and a device therefor capable of performing stable carbon dioxide coating of a one-liquid curing type or two-liquid curing type paint.Type: ApplicationFiled: March 30, 2010Publication date: April 26, 2012Applicants: KAMI ELECTRONIC INDUSTRY CO., LTD., NAT INST OF ADV INDUSTRIAL SCI AND TECHInventors: Akira Suzuki, Shin-ichiro Kawasaki, Noriaki Hayasaka
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Publication number: 20100104805Abstract: A transparent novel material/new technology realizing, in the technical field of packaging material, sealing material and display material, not only high thermostability but also excellence in flexibility, surface smoothness, dimensional stability and gas barrier properties.Type: ApplicationFiled: August 2, 2006Publication date: April 29, 2010Applicant: Nat Inst of Adv Industrial Sci and TechInventors: Takeo Ebina, Fujio Mizukami
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Publication number: 20100073988Abstract: This invention has the purpose of providing a nonvolatile semiconductor storage device which is capable of entering multivalued storage in a FeFET unit without requiring preparation of a plurality of voltage sources. The nonvolatile semiconductor storage device is provided with multivalued ferroelectric memory cells which impart varied quantities of polarization to a ferroelectric material by applying pulse voltages having one and the same height and varied widths and consequently produce varied states of storage in conformity with the varied quantities of polarization.Type: ApplicationFiled: September 23, 2009Publication date: March 25, 2010Applicant: Nat Inst of Adv Industrial Sci and TechInventors: Mitsue TAKAHASHI, Shigeki Sakai, Shouyu Wang, Ken Takeuchi
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Publication number: 20100055502Abstract: A tunneling magnetoresistive device includes: a fixed layer that includes a ferromagnetic material; a tunneling insulating film that is provided in contact with the fixed layer; and a free layer that includes a first ferromagnetic film provided in contact with the tunneling insulating film, a second ferromagnetic film whose magnetization is coupled parallel to the magnetization of the first ferromagnetic film, and a conductive film interposed between the first ferromagnetic film and the second ferromagnetic film.Type: ApplicationFiled: August 26, 2009Publication date: March 4, 2010Applicant: Nat Inst of Adv Industrial Sci and TechInventors: Hitoshi KUBOTA, Akio FUKUSHIMA, Kei YAKUSHIJI, Shinji YUASA, Koji ANDO, Satoshi YAKATA
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Publication number: 20090277806Abstract: The present invention is an electrochemical cell system gas sensor that detects a subject substance to be detected using an electrochemical reaction system and comprises an ion conduction phase and at least two kinds of electrode facing each other and contacting the ion conduction phase, an electrode structure thereof comprising a chemical detection electrode layer having a selective adsorption characteristic relative to the subject substance to be detected and at least one reference electrode layer serving as a counter electrode to the chemical detection electrode layer, a manufacturing method thereof, and a method of detecting the subject substance to be detected, the present invention provides a chemical detection system having an extremely high response speed and great detection ability irrespective of high or low temperatures and even in the presence of excessive oxygen that impairs the chemical reaction of the subject substance to be detected.Type: ApplicationFiled: June 27, 2007Publication date: November 12, 2009Applicants: Nat Inst of Adv Industrial Sci and Tech, Bosch CorporationInventors: Koichi Hamamoto, Yoshinobu Fujishiro, Masanobu Awano, Kazuhisa Kasukawa, Masashi Kasaya, Takashi Kobayashi
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Publication number: 20090134465Abstract: A desired property for a metal gate electrode layer is that it can cover a three-dimensional semiconductor structure having a microstructure with high step coverage. Another desired property for the metal gate electrode layer is that the surface of a deposited electrode layer is flat on a nanometer scale, enables a dielectric layer for electrical insulation to be coated without performing special planization after deposition of the electrode layer. Furthermore, another desired property for the metal gate electrode layer is that it has the similar etching workability to materials used in an ordinary semiconductor manufacturing process. Furthermore, another desired property for the metal gate electrode layer is that it has a structure in which diffusion of impurity is suppressed due to homogeneity thereof and the absence of grain boundaries.Type: ApplicationFiled: August 22, 2006Publication date: May 28, 2009Applicant: Nat. Inst. of Adv. Industrial Sci. and Tech.Inventor: Takashi Shimizu
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Publication number: 20090045060Abstract: A method for analyzing proteins with the use of electrophoresis is provided, which makes it possible to rapidly and conveniently analyze a great variety of proteins with high sensitivity. The method for analyzing a protein in a sample comprises setting a sample in a carrier for electrophoresis, performing electrophoresis for the sample using a buffer for electrophoresis in which a labeling compound represented by formula I: wherein R1 is an aryl group or a heteroaryl group that may be substituted, R2 is a heterocyclic group that may be substituted, and n is an integer between 1 and 5, is dissolved, and then detecting a complex of the compound of formula I and the protein via spectrophotometrical measurement.Type: ApplicationFiled: October 18, 2006Publication date: February 19, 2009Applicant: Nat. Inst. of Adv. Industrial Sci. and Tech.Inventors: Yoshio Suzuki, Kenji Yokoyama, Ichiji Namatame
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Publication number: 20080318355Abstract: There is provided a semiconductor light-emitting element and a method of producing the same including high density and high quality quantum dots emitting light at a wavelength of 1.3 ?m. A semiconductor light-emitting element has a first GaAs layer, a second InAs thin film layer having the plurality of InAs quantum dots formed on the first GaAs layer, a third InGaAs layer formed on the second InAs thin film layer having the plurality of InAs quantum dots, and a fourth GaAs layer formed on the third InGaAs layer, wherein the As source is As2.Type: ApplicationFiled: August 27, 2008Publication date: December 25, 2008Applicant: Nat Inst of Adv Industrial Sci and TechInventor: Takeru AMANO
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Publication number: 20080051291Abstract: The length portion of part of a multiband superconductor line 10 is used as a closed circuit line part Rc that constitutes part of a closed circuit allowing passage of an electric current Io generated by an electric current source 12. Meantime, the line part extending and continuing into the closed circuit line part Rc is used as an open circuit line part Ro adapted to serve as an open circuit regarding the electric current source 12. By keeping the multiband superconductor line 10 under a temperature environment falling short of the critical soliton temperature and injecting a nonequilibrium electric current Io from the electric current source 12 into the closed circuit line part of the multiband superconductor line, it is rendered possible to induce generation of an interband phase different soliton So. The generated interband phase difference soliton So is forwarded as separated from the electric current Io to the open circuit line part Ro and is made to run therein.Type: ApplicationFiled: August 27, 2007Publication date: February 28, 2008Applicant: Nat Inst of Adv Industrial Sci and TechInventors: Yasumoto Tanaka, Akira Iyo, Adrian Crisan, Kazuyasu Tokiwa, Tsuneo Watanabe, Norio Terada
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Publication number: 20070212263Abstract: The present invention provides a micro thermoelectric gas sensor having a thermoelectric conversion section, a microheater, a catalyst layer formed on the microheater and to be heated by the microheater, which acts as a catalyst for catalytic combustion of a combustible gas, and a sensor detection section with an electrode pattern therefore formed on a membrane of a predetermined thickness, and a method for forming a micropattern of a functional material of a catalyst or resistor in a predetermined position on a substrate in a state in which the microstructure of the functional material remains controlled.Type: ApplicationFiled: March 16, 2005Publication date: September 13, 2007Applicant: NAT. INST. OF ADV. INDUSTRIAL SCI. AND TECH.Inventors: Woosuck Shin, Noriya Izu, Ichiro Matsubara, Norimitsu Murayama, Kazuki Tajima, Fabin Qiu, Zhihui Zhao
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Publication number: 20070058302Abstract: To provide a tunnel junction device having a high MR ratio even at room temperature, a tunneling film as a nonmagnetic layer of three-layer structure of LaMnO3/SrTiO3/LaMnO3 is arranged between a ferromagnetic metal material La0.6Sr0.4MnO3 (12) and a ferromagnetic metal film material La0.6Sr0.4MnO3 (14). The tunneling film comprises two unit layers of LaMnO3 (13A) arranged on the ferromagnetic metal material La0.6Sr0.4MnO3 (12); five unit layers of SrTiO3 (13B); and two unit layers of LaMnO3 (13C) arranged at the interface between the SrTiO3 (13B) and the ferromagnetic metal film material La0.6Sr0.4MnO3 (14).Type: ApplicationFiled: June 4, 2004Publication date: March 15, 2007Applicants: NAT INST OF ADV INDUSTRIAL SCI AND TECH, JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Yoshinori Tokura, Masashi Kawasaki, Hiroyuki Yamada, Yoshihiro Ogawa, Yoshio Kaneko
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Publication number: 20060191019Abstract: An electronic media communication apparatus is provided in which encryption keys and decryption algorithms are provided as circuits concealed in logic programmable devices. When the client requests delivery of electronic media, the server individually encrypts the electronic media and delivers the encrypted electronic media to the client. In the client, an electronic media specific circuit section uses logic circuit data received via a client data communication section to generate an electronic media specific logic circuit. Then, a logic circuit configuration section combines the logic circuit with a terminal specific circuit section uniquely implemented for the client to form an electronic media security circuit section. The original digital content can then be generated by inputting the encrypted electronic media stored in a storage unit to the electronic media security circuit section.Type: ApplicationFiled: January 10, 2006Publication date: August 24, 2006Applicants: Nat. Inst. of Adv. Industrial Sci. and Tech., KDDI CORPORATIONInventors: Kenji Toda, Hiroyuki Yokoyama
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Publication number: 20060099680Abstract: An object of the present invention is to provide a means for producing O-fucosylated protein in large quantities, a means for searching for new genes associated with the synthesis system of O-fucosylated protein or the proteins expressed by the genes, and a means for elucidating the functions thereof. According to the present invention, a yeast transformant characterized in that the genes associated with the synthesis system of O-fucosylated protein are a GDP-fucose synthase gene, a GDP-fucose transporter gene, a fucosyltransferase gene, and a fucose receptor gene is provided.Type: ApplicationFiled: April 25, 2005Publication date: May 11, 2006Applicant: Nat Inst of Adv Industrial Sci and TechInventors: Yoshifumi Jigami, Yuuko Chigira, Xiao-Dong Gao, Si jun Dong
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Publication number: 20060063662Abstract: A zeolite suspension contains MEL-type zeolite nanocrystals as a principal component. A method for the production of MEL-type zeolite nanocrystals includes the steps of aging a synthesized solution comprising TEOS, TBAOH, water and alcohol and subjecting the aged solution to hydrothermal crystallization treatment at a predetermined temperature. A method for the production of a zeolite suspension includes the steps of aging a synthesized solution comprising TEOS, TBAOH, water and alcohol, subjecting the aged solution to hydrothermal crystallization treatment to produce MEL-type zeolite nanocrystals and mixing a composition having a surfactant dissolved in at least one organic solvent or a mixed solvent of alcohol-based organic solvents, amide-based organic solvents and ketone-based organic solvents with a zeolite nano-crystal suspension containing the MEL-type zeolite nanocrystals to produce a zeolite suspension.Type: ApplicationFiled: August 29, 2005Publication date: March 23, 2006Applicant: Nat. Inst. of Adv. Industrial Sci. and Tech.Inventors: Nobuhiro Hata, Guoqing Guan, Takenobu Yoshino, Syozo Takada
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Publication number: 20050287818Abstract: The material contemplated by this invention for the formation of a low-dielectric-constant film contains in all the stereoisomer molecules of 1,3,5,7-tetramethyl cyclotetrasiloxane (TMCTS) not less than 15% and not more than 100% of a stereoisomer having all the four hydrogen atoms forming an Si—H bond fall on the same size relative to the Si—O ring plane. It is utilized as a material for forming a low-dielectric-constant film which can be used for enhancing the function of an integrated circuit in the field of semiconductors.Type: ApplicationFiled: June 21, 2005Publication date: December 29, 2005Applicants: Nat Inst of Adv Industrial Sci and Tech, TOKYO ELECTRON LIMITEDInventors: Nobuhiro Hata, Hidenori Miyoshi
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Publication number: 20050206990Abstract: A reflective photochromic element having a diffuse reflective surface is provided. A diffuse reflection type photochromic element has a transparent thin film having surface irregularities formed on a transparent base and a reflective photochromic thin film layer having surface irregularities formed on that transparent thin film. A diffuse reflection type photochromic glass material includes the aforementioned diffuse reflection type photochromic element as a constituent unit. A method for manufacturing a diffuse reflection type photochromic unit includes the steps of forming a transparent thin film having surface irregularities integrally or separately on a transparent base and forming a reflective photochromic thin film layer having surface irregularities on that transparent thin film.Type: ApplicationFiled: March 15, 2005Publication date: September 22, 2005Applicant: Nat Inst of Adv Industrial Sci and TechInventors: Kazuki Yoshimura, Masahisa Okada