Patents Assigned to NATIONAL CHEN KUNG UNIVERSITY
  • Patent number: 8815632
    Abstract: A method of manufacturing an order vacancy compound (OVC) is provided. The method includes the following steps. A trivalent ion, a hexavalent ion and one of a univalent ion and a bivalent ion for an electrodeposition process are provided to form a solar energy absorbing film. The OVC is formed by performing an electrochemical etching process on the solar energy absorbing film.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: August 26, 2014
    Assignee: National Chen-Kung University
    Inventor: Wen-Hsi Lee
  • Patent number: 8618295
    Abstract: Synthetic processes for preparing luminescent iridium complexes and precursors thereof are provided. The method employs water as the reaction solvent to prepare luminescent iridium complexes in two different ways. In the first way, a precursor [Ir2(C11NR8)4I2] (Formula I) is prepared from one of IrCl3, M3IrCl6 (M=Li, Na, K) and [Ir2(C11NR8)4Cl2], and then the precursor [Ir2(C11NR8)4I2] is converted into one of the two luminescent iridium isomeric complexes [Ir(C11NR8)2(C11NR?8)] (Formula II). In the second way, a metal complex IrCl3 or M3IrCl6 (M=Li, Na, K), HC11NR8 and a base are converted selectively into one of the two iridium isomeric complexes [Ir(C11NR8)3] (Formula VIII). Herein, R and R? are defined the same as the specification.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: December 31, 2013
    Assignee: National Chen Kung University
    Inventors: Kom-Bei Shiu, Wu-Sian Sie
  • Publication number: 20080246143
    Abstract: An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.
    Type: Application
    Filed: June 10, 2008
    Publication date: October 9, 2008
    Applicant: NATIONAL CHEN KUNG UNIVERSITY
    Inventors: Yan-Kuin Su, Kuan-Chun Chen, Chun-Liang Lin, Jin-Quan Huang, Shu-Kai Hu