Abstract: A series of self-assembled monoacylglycerol clusters with excitation-dependent visible fluorescence have been developed.

Abstract: A series of self-assembled monoacylglycerol clusters with excitation-dependent visible fluorescence have been developed.

Abstract: A detachable solar thermal coat assembly with carbon nanocapsule composite material includes an outer jacket, an inner lining and a conducting wire. The outer jacket has therein a power input device that provides electric power to a carbon nanocapsule fiber composite layer of the inner lining through the conducting wire so that the carbon nanocapsule fiber composite layer is powered to give out heat and warm a user wearing the solar thermal coat assembly.

Abstract: New pseudomorphic high electron mobility transistors (pHEMT's) with extremely high device linearity having an n+/p+/n camel-gate heterostructure and ?-doped sheet structure is disclosed. For the example of InGaP/InGaAs/GaAs ?-doped pHEMT's with an n+-GaAs/p+-InGaP/n-InGaP camel-gate structure, due to the p-n depletion from p+-InGaP gate to channel region and the presence of large conduction band discontinuity (?Ec) at InGaP/InGaAs heterostructure, the turn-on voltage of gate is larger than 1.7 V. Attributed to the applied gate voltage partly lying on the camel gate and influence of the carrier modulation, the change of total depletion thickness under gate bias is relatively small, and high drain current and linear transconductance can be achieved, simultaneously. The excellent device performances provide a promise for linear and large signal amplifiers and high-frequency circuit applications.

Abstract: New pseudomorphic high electron mobility transistors (pHEMT's) with extremely high device linearity having an n+/p+/n camel-gate heterostructure and &dgr;-doped sheet structure is disclosed. For the example of InGaP/InGaAs/GaAs &dgr;-doped pHEMT's with an n+-GaAs/p+-InGaP/n-InGaP camel-gate structure, due to the p-n depletion from p+-InGaP gate to channel region and the presence of large conduction band discontinuity (&Dgr;Ec) at InGaP/InGaAs heterostructure, the turn-on voltage of gate is larger than 1.7 V. Attributed to the applied gate voltage partly lying on the camel gate and influence of the carrier modulation, the change of total depletion thickness under gate bias is relatively small, and high drain current and linear transconductance can be achieved, simultaneously. The excellent device performances provide a promise for linear and large signal amplifiers and high-frequency circuit applications.

Abstract: Novel heterojunction bipolar transistors (HBT's) with high current gain and extremely low offset voltage are disclosed. Owing to the insertion of spacer/&dgr;-doped sheet/spacer at base-emitter (B-E) heterojunction in this invention, the potential spike at B-E junction can be eliminated and the confinement effect for holes are enhanced. The potential spike is not observed under large B-E bias, and the offset voltage is still relatively small with small increase. In particular, for the HBT's with large conduction band discontinuity, the method of the invention is more efficient for completely eliminating the potential spike. For the example of InP/GaInAs HBT, a maximum common-emitter current gain of 455 and above 320 at IB=5 &mgr;A, and a low offset voltage less 60 mV are achieved.