Abstract: A STM drive mechanism capable of moving a scanning tunneling microscope (STM) incorporated with a molecular beam epitaxy (MBE) device in the MBE device under vacuum and a substrate holder with a wide clearance formed between a substrate heating system and the substrate holder are provided. The STM is protected by a heat insulating shield from high vapor pressure atmosphere and radiant heat according to substrate heating.

Abstract: Refractory superalloys consist essentially of a primary constituent selected from the group consisting of iridium, rhodium, and a mixture thereof, and one or more additive elements selected from the group consisting of niobium, tantalum, hafnium, zirconium, uranium, vanadium, titanium and aluminum, and the superalloys having a microstructure containing an FCC-type crystalline structure phase and an L1.sub.2 -type crystalline structure phase are precipitated. Preferably the amount of additive element(s) is 2 to 22 atom %.

Abstract: To remarkably improve shape memory properties without the need for strictly controlling the composition, the present invention provides a Ti--Ni-based shape-memory alloy having a titanium content within a range of from 50 to 66 atomic %, which comprises an amorphous alloy heat-treated at a temperature of from 600 to 800 K., in which sub-nanometeric precipitates generating coherent elastic strains are formed and distributed in the bcc parent phase(B2).

Abstract: A conductive wire is electrically heated in a gas atmosphere, wherein a gas reacts with a constituent material of the conductive wire, under gravity-free or micro gravity state. A ceramic is formed on a surface of the wire sa an outer core through a reaction between the wire and the gas and is left by caving an inside wire by melting while maintaining controlled gas convection.

Abstract: A method of fabricating a semiconductor quantum box uniform in size and free from processing damages comprising the steps of adsorbing elements classified in VI family of the periodic table onto the surface of a single or multi-quantum well structure composed of semiconductors; growing crystallites of a semiconductor or a metal by liquid-drop epitaxy; applying chemical etching to the single or multi-quantum well structure with the use of the crystallites as a mask, thereby removing areas of the single or multi-quantum well structure where the crystallites haven't grown on the surface; removing the crystallites used as mask by chemical etching; and filling a semiconductor into the areas of the single or multi-quantum well structure removed in the afore step.

Abstract: Secondary recrystallized grains having a plurality of crystal orientations in a polycrystalline compact of molybdenum or tungsten, which contains at least one element selected from the group consisting of calcium and magnesium in amount of 0.007 to 0.090 atom %, are formed by locally heating an end portion(s) of the polycrystalline compact. Some grains, which have a prescribed crystal orientation, selected from these secondary recrystallized grains are subsequently grown in the whole polycrystalline compact by annealing.

Abstract: A laminated material consists of more than three single crystalline layers of a metal or alloy. The layers are joined with one another by diffusion under effects of pressurization and heating in a deoxidative atmosphere. The layers are also conformed within an angular range where crystalline orientations of composition planes of the layers can be directly joined.

Abstract: A new boron-carbon system superconductive substance has a nominal composition expressed R.sub.3 M.sub.4-x B.sub.4-y C.sub.3-z (where R is at least one element selected from the group consisting of Y, Sc and lanthanide series elements, M is at least one metal element categorized in VIII group of periodic table, and 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z<3, except a case of x=y=1 and z=0).

Abstract: A low-temperature phase oxide single crystal having a nominal composition of Ba(B.sub.1-x M.sub.x).sub.2 O.sub.4 is synthesized by partially substituting B of BaB.sub.2 O.sub.4 with one or more additive elements M and by growing the single crystal in a Ba(B.sub.1-x M.sub.x).sub.2 O.sub.4 composition compound (where M is one or more additive elements selected from the group consisting of Al, Ga and In, and 0.001<x<0.15).

Abstract: Focusing laser beams are emitted to a gas plasma produced through discharge and a laser thermal plasma, which is independent of the gas plasma and extends coaxially along the laser beams, is produced in a gas flow space.

Abstract: A clad superconductive wire or tape of an oxide superconductive material and a silver-copper alloy base containing 0.05-90 atomic % copper or a silver alloy. The silver-copper alloy base contains one or more elements selected from the group of Zr, Hf, Al, V, Nb and Ta in amounts of from 0.01-3 atomic %, or contains Au in amount of 0.01-10 atomic %. The silver alloy contains one or more elements selected from the group of Ti, Zr, Hf, V, Nb, Ta, Mg, Ca, Sr and Ba in amounts of from 0.01 to 3 atomic %, or one or more elements selected from the group of Au, Al, Ga, In and Sn in amounts of 0.05 to atomic %. The base material is filled with a Bi-containing oxide of Bi.sub.1 Pb.sub.u Sr.sub.x Ca.sub.y Cu.sub.z O.sub.w wherein u=0-0.3, x=0.8-1.2, y=0.2-1.2, and z=0.8-2.0, and processed to obtain a superconductive wire or tape having enhanced mechanical strength, superconductivity and plastic workability.

Abstract: A decelerating and focusing ion beam device is provided with an ion source, a focusing lens system having a plurality of focusing lenses and a multiple decelerating lens system having a plurality of decelerating lenses. It is possible to realize selective super-refined crystal growth and superficial etching with very high accuracy.

Abstract: Highly pure disilicon hexafluoride is synthesized by a process in which a suspension of a fluorination agent is made by dispersing this fluorination agent in an oxybenzene compound as a solvent and disilicon hexachloride is dripped in the suspension to be caused to react with the fluorination agent in nitrogen gas flows under atmospheric pressure, the oxybenzene being expressed by a following formula: ##STR1## (where each of R.sub.1 and R.sub.2 is an alkyl group alternatively having one or more substituents; carbon numbers summed up by R.sub.1 and R.sub.2 are equal to at least 2; and m.gtoreq.1 and n.gtoreq.0).

Abstract: A clad superconductive wire or tape of an oxide superconductive material and a silver-copper alloy base containing 0.05-90 atomic % copper or a silver alloy. The silver-copper alloy base contains one or more elements selected from the group of Zr, Hf, Al, V, Nb and Ta in amounts of from 0.01-3 atomic %, or contains Au in amounts of 0.01-10 atomic %. The silver alloy contains one or more elements selected from the group of Ti, Zr, Hf, V, Nb, Ta, Mg, Ca, Sr and Ba in amounts of from 0.01 to 3 atomic %, or one or more elements selected from the group of Au, Al, Ga, In and Sn in amounts of 0.05 to 5 atomic %. The base material is filled with a Bi-containing oxide of Bi.sub.1 Pb.sub.u Sr.sub.x Ca.sub.y Cu.sub.z O.sub.w wherein u=0-0.3, X=0.8-1.2, y=0.2-1.2, and z=0.8-2.0, and processed to obtain a superconductive wire or tape having enhanced mechanical strength, superconductivity and plastic workability.

Abstract: A substrate electrode having a plurality of substrate holders capable of causing a substrate to tilt by an arbitrary angle .theta. relative to the horizontal plane is provided. A plurality of auxiliary electrodes are arranged substantially vertically below the substrate electrode and between the substrate electrode and a target. The substrate electrode and the auxiliary electrodes are electrically insulated from the target. Bias voltage applied to the substrate electrode and the auxiliary electrodes causes the plasma boundary between the cathode dark space and the negative glow to form a cathodic plasma space having a parabolic section, thus forming a crystal-oriented thin film on the substrate surface.

Abstract: Powder having a composition in which the contents of Sr, Ca and Cu are increased so that an Sr-Ca-Cu-O phase is precipitated in addition to a 2223 phase of (Bi, Pb)-Sr-Ca-Cu is charged in a metal sheath, and this metal sheath is plastic-worked, then subjected to a primary heat treatment, then plastic-worked and further subjected to a secondary heat treatment. In the as-obtained bismuth oxide superconducting wire, pinning points based on the Sr-Ca-Cu-O phase are introduced into the superconductor, whereby magnetic field characteristic of the critical current density is improved.

Abstract: A TiAl base alloy containing 46 to 54 mol % of Ti and 46 to 52 mol % of Al in which Sb is added within a range of 0.1 to 1 mol %, at least one element of Hf and/or Zr is further added within a range of 0 to 3 mol %, and three phases of a .gamma. phase, an .alpha..sub.2 phase and Sb-rich phase coexist.

Abstract: A method for producing a Cu--Ag alloy based conductive material containing about 10% to about 20% at % Ag, that involves the steps of continuously casting the alloy into a rod followed by quickly cooling the rod, cold-working the rod to a reduction in area of 80% or more, then heat treating the cold-worked rod at a temperature of 250.degree. C. to 350.degree. C. for 1 hour or more to form a heat-treated rod, and thereafter cold-working the heat-treated rod to a reduction in area of 90% or more as defined based on the cast rod to produce conductive material having a high strength of 700 MPa or more and conductivity of 75% IACA or more.

Abstract: A P-type thermoelectric material consists essentially of iron disilicide, metallic manganese and metallic aluminium dissolved in or alloyed with the iron disilicide, and silicon oxide and/or aluminum oxide present in the iron disilicide. The manganese is contained in an amount of from 1.67 to 4.1 atomic % with respect to a sum of atoms of iron and silicon constituting the iron disilicide, the metallic manganese and the metallic aluminum taken as 100 atomic %, and the metallic aluminum contained in an amount of from 1.33 to 3.33 atomic % with respect thereto, and a sum of the metallic manganese and the metallic aluminum in an amount of from 4.0 to 5.34 atomic % with respect thereto. The P-type thermoelectric material having such a composition produces a thermoelectromotive force equal to or greater than those of the conventional P-type thermoelectric materials comprised of iron disilicide, and it exhibits a mean resistivity equal to or smaller than that of the N-type thermoelectric material.

Abstract: A seed crystal is connected with a polycrystal at one end of the polycrystal, the connected crystal material is melted under a zero-gravity or microgravity environment without any container, and a single crystal is grown.