Abstract: A high-sensitivity Pd/InP hydrogen sensor was made by a) forming an n-type or p-type semiconductor film on a semiconductor substrate; b) forming a patterned first metal electrode on said semiconductor film, wherein said first metal electrode forms an Ohmic contact with said semiconductor film; and c) forming a second metal electrode on said semiconductor film, said second metal electrode being isolated from said first metal electrode, wherein said second metal electrode forms a Schottky contact with said semiconductor film, wherein a thickness of said second metal electrode and a material of which said second metal electrode is made enable a Schottky barrier height of said Schottky contact to decrease when hydrogen contacts said second metal electrode. The second metal electrode can be physical vapor deposited or electroless plated.

Abstract: The present invention discloses a technique of enhancing adhesion between a passivation layer and a low-K dielectric layer, in which a SiO2 layer as the passivation formed on the low-K dielectric layer is subjected to N2O plasma annealing. This technique is useful in improving the yield of a process for preparing Cu damascene interconnection.

Abstract: A thin-disc piezoelectric actuating ultrasonic motor includes a stator made up of a commercially available piezoelectric element that includes a piezoelectric ceramic membrane bonded on a metal plate to form a concentric disk. An ultrasonic motor driving mechanism induces mechanical vibration in the piezoelectric element by extension and shrinkage of the metal back plate, upon application of single phase AC power. There are two propagating directions in the induced mechanical vibrating wave. One is a radial component, and the other is a transverse component. The outer edge of the piezoelectric element thus forms traveling waves in different directions. These traveling waves may be used to provide a torque so as to drive the rotor to rotate.

Abstract: The present invention discloses a technique of enhancing adhesion between a passivation layer and a low-K dielectric layer, in which a SiO2 layer as the passivation formed on the low-K dielectric layer is subjected to N2O plasma annealing. This technique is useful in improving the yield of a process for preparing Cu damascene interconnection.

Abstract: An ellipsometer for measuring the complex refractive index of a sample and thin film thickness according to the invention. The ellipsometer includes a linear polarized light source, a reference analyzer, a polarization analyzer and a light direction controller. The linear polarized light source used to generate a measuring beam for detecting the sample. The phase modulator used to control the phase of the measuring beam thereby to generate a sampling beam. The reference analyzer used to generate a reference beam according to part of the sampling beam thereby to adjust the intensity of the sampling beam. The polarization analyzer used to analyze the phase, polarization and intensity of the sampling beam after the sampling beam is reflected by the sample.

Abstract: This invention provides a method for production of AlN powder. An Al powder was poured into a refractory container having an opening end. If the packing density of the Al powder was less than 0.8 g/cm3, the container containing the Al powder was placed in a reaction chamber filled with nitrogen. If the packing density was larger than 0.8 g/cm3, porous aluminum tubes were placed vertically in Al powder or an initiator was placed on top of the Al powder or both were taken. The container was then placed in the reaction chamber filled with nitrogen. A nitrogen stream was allowed to flow through the Al powder from the bottom to the top and the combustion synthesis reaction was ignited by heating the top surface of the reactant powder.

Abstract: Two series of 6,7,2′,3′,4′,5′-substituted 2-phenyl-4-quinazolinones and 6,2′,3′,4′,5′-substituted 2,3-dihydro-2-phenyl-4-quinazolinones are synthesized and evaluated for cytotoxicity against a panel of human tumor cell lines, such as epidermoid carcinoma of the nasopharynx (KB), lung carcinoma (A-549), ileocecal carcinoma (HCT-8), breast cancer (MCF-7), melanoma (SKMEL-2), ovarian cancer (1A9), glioblastoma (U-87-MG), bone (HOS), P-gp-expressing epidermoid carcinoma of the nasopharynx (KB-VIN), and prostate cancer (PC3) cell lines, and some of the compounds are found potent. The present invention also synthesizes 2-phenyl-4-alkoxy-quinazoline compounds, wherein some of the compounds exhibit antiplatelet activity.

Abstract: Keywords: computer assisted test, test assessment, test collection, distant learning. The main problem with the network test base system is that there are neither sufficiently many nor good enough test items. To satisfy these two points, there must be more test item resources and a mechanism for assessing test items to determine whether a test item should stay in the test base. The present invention provides a method for automation of dynamic test item collection and assessment, which allows teacher and students to contribute test items to the test base and each independently managed test base can share test items. This can make the test base rapidly grow and expand the size of a test base. The more independent the student are, the higher the applicability of this method is.

Abstract: A hand operated bicycle gear transmission device. The device includes a handle bar fixing base, a cover fixing base, a rubber cover, a positioning plate, positioning protuberances, saucer shaped springs, a circular fixing hole for a steel cable head, a steel cable guide groove and a stroke compensating device. The device utilizes cooperative function of positioning recessed slots formed around a rigid positioning plate. The positioning protuberances are provided at the rear of the cover fixing base and the saucer shaped springs are adjacent to the positioning plate to provide mutual engagement force therebetween so as to achieve an excellent positioning effect of gear transmission even under the worst riding environment. As a result, the device can be conveniently operable with a small applied force to perform speed change smoothly, the device having a simplified and easy looking appearance constructed with a small number of components, and being able to easily be assembled and repaired.

Abstract: An ohmic contact to II-VI compound semiconductor device for lowering the contact resistance and increasing the efficiency and reliability of a photoelectric device. The method of manufacturing the ohmic contact to a II-VI compound semiconductor device comprises the steps of forming a II-VI compound semiconductor layer on the substrate, forming a mask layer with a contact via on the II-VI compound semiconductor layer, forming a metal-contact layer on the mask layer and II-VI compound semiconductor layer, and removing the metal-contact layer over the mask layer, wherein the remainder of the metal-contact layer forms the ohmic contact. In order to prevent oxidization of the metal-contact layer, a shield layer comprised of a noble metal can be disposed on the metal-contact layer.

Abstract: The present invention disclose a method for measuring a thermal expansion coefficient of a thin film, in which the thin film is first deposited on two substrates having different thermal expansion coefficients under the same conditions. For each of the two deposited substrates, a relationship between the thin film stresses and the measuring temperatures is established by using a phase shifting interferometry technique, in which the stresses in the thin films are derived by comparing the deflections of the substrates prior to and after the deposition. Based on the two relationships the thermal expansion coefficient, and elastic modulus, E f ( 1 - v f ) , can be calculated, wherein Ef and &ngr;f are the Young's modulus and Poisson's ratio of the thin film, respectively.

Abstract: The invention relates to a high-breakdown voltage heterostructure field-effect transistor (FET), which can be used under a high temperature condition. The FET device from bottom upward in succession includes a semiconductor substrate, a buffer layer, a delta-doped sheet, an undoped layer, a sub-channel layer, an active channel layer, a gate layer, and an ohmic contact layer.

Abstract: A low-voltage divide-by-64/65 prescaler fabricated with a 0.35 &mgr;m standard CMOS technology is presented to lower power dissipation. A new dynamic D-flip-flop (DFF) using the dynamic back-gate forward bias method has been developed for low-voltage operation. The prescaler including a preamplifier measured at 1 V supply voltage has a maximum operating frequency of 170 MHz and its power dissipation is only 0.9 mW.

Abstract: An admixture of hydrated alumina and an organic acid surfactant is calcined in an oxygen-depleted atmosphere, cooled before exposing it to air, comminuted and then centrifuged to produce nanometer-grade superfine &agr;-alumina powder.

Abstract: A method for preparing a barium fluorotitanate (BaTiF6) powder and depositing a barium titanate (BaTiO3) thin film on a silicon wafer is disclosed. The method includes steps of a) producing a barium fluorotitanate powder by mixing a hexafluorotitanic acid solution and a barium nitrate solution at a low temperature, b) dissolving the barium fluorotitanate powder into water and mixing with a boric acid solution, and c) immersing a silicon wafer into the mixture at a low temperature to grow a barium titanate thin film on the silicon wafer.

Abstract: The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.

Abstract: An InP/InGaAlAs heterojunction bipolar transistor with the characteristics of amplification and negative-differential-resistance phenomenon is presented in the invention. The 3-terminal current-voltage characteristics of the heterojunction bipolar transistor can be controlled by the applied base current. In the large collector current regime, the heterojunction bipolar transistor has the characteristics as similar to conventional bipolar junction transistors. However, in a small collector current regime, both the transistor active region and negative-differential-resistance loci are observed. The negative-differential-resistance phenomenon is caused by the insertion of a thin base layer and a &dgr;-doped sheet. Moreover, the use of a setback layer with a thickness of 50 Å added at the emitter-base junction can suppress the diffusion of doping impurity in the base and reduce the potential spike at emitter-base heterojunction so as to improve the confinement of holes injected from base to emitter.

Abstract: A piezoelectric-driven 2-D stage (X-Y axis) utilizing the frictional stick-slip effect and inertia force can be designed and fabricated to achieve ultra high resolution and long travel range. Based upon the principle of elastic deformation, a high resolution piezoelectric-driven micropositioner (Z-axis) is designed and fabricated. Moreover, a CD pick-up head and analog linear controller are integrated with Z-axis micropositioner to be a autofocus system. This design is based upon the requirement of the optical lithography developments by using 193 nm Excimer Laser. During this special lighography process, Z-axis micropositioner is needed for the laser beam focusing. A 2-D X-Y stepper is also needed for the movement of the wafer under laser exposure. The wafer stepper is based on the step-repeat and step-scan process.

Abstract: A high gain and low leakage current porous silicon metal-semiconductor-metal planar photodetector was fabricated through rapid thermal oxidation (RTO) and rapid thermal annealing (RTA). A high responsivity of 2.15 A/W can be obtained under a 0.85 mW 675 nm laser diode illumination. The gain is 400%. It shows high potential as a device applied in optoelectronics and optoelectronic integrated circuits.

Abstract: The present invention relates to a Helicobacter pylori gene, fldA, a putative flavodoxin gene and whose expression is associated with mucosa-associated lymphoid tissue lymphoma of the stomach (MALToma). A G insertion at position 481 of the fldA gene was more frequently observed in strains associated with MALToma than other strains. Therefore, the present invention provides a new method to identify H. pylori patient with higher risk of developing gastric MALToma.