Patents Assigned to National University Corporation NARA Institute of Science and Technology
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Publication number: 20140165232Abstract: By increasing, in a plant, expression of a gene or the like encoding a protein having the amino acid sequence of SEQ ID NO: 1, it is possible to promote root elongation of the plant and/or increase biomass of the plant.Type: ApplicationFiled: July 24, 2012Publication date: June 12, 2014Applicants: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY, THE REPUBLIC OF BOTSWANAInventors: Masataka Kajikawa, Akiho Yokota, Kinya Akashi, Seja Gasenone Maphanyane, Pharoah Mosupi, Stephen Majara Chite, Norio Kato
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Patent number: 8698083Abstract: A method and device for evaluating a solar cell each of which makes it possible to easily evaluate a defect of a solar cell especially in such a manner that an internal cause defect and an external cause defect are distinguished from each other. The device includes: electric current passing means for passing, in a forward direction, an electric current through a solar cell element constituting the solar cell; light emission detecting means for detecting, out of light emitted from the solar cell element due to the electric current passed by the electric current passing means, light in a first range of wavelengths from 800 nm to 1300 nm and light in a second range of wavelengths from 1400 nm to 1800 nm; and judging means for distinguishing between an internal cause defect and an external cause defect.Type: GrantFiled: August 3, 2010Date of Patent: April 15, 2014Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Takashi Fuyuki, Ayumi Tani
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Patent number: 8645130Abstract: A processing unit is provided which executes speech recognition on speech signals captured by a microphone for capturing sounds uttered in an environment. The processing unit has: an initial reflection component extraction portion that extracts initial reflection components by removing diffuse reverberation components from a reverberation pattern of an impulse response generated in the environment; and an acoustic model learning portion that learns an acoustic model for the speech recognition by reflecting the initial reflection components to speech data for learning.Type: GrantFiled: November 20, 2008Date of Patent: February 4, 2014Assignees: Toyota Jidosha Kabushiki Kaisha, National University Corporation Nara Institute of Science and TechnologyInventors: Narimasa Watanabe, Kiyohiro Shikano, Randy Gomez
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Patent number: 8641114Abstract: A robot hand which can be formed in the shape of a human hand and improves maintenance performance, and generates fingertip force is provided. A robot hand (1) of the present invention is provided with a hand section (3) and an arm section (5). The hand section (3) corresponds to the portion of a human hand which is forward from the wrist thereof. The arm section (5) is provided with a drive device (d5) including a plurality of motors and generates driving torque for driving each movable section of the hand section (3). The hand section (3) and the arm section (5) are configured in such a manner that a group (g36) of wrist-mounted pulleys which are first driving torque transmitting members coaxially arranged and a group (r5) of arm pulleys which are second driving torque transmitting members coaxially arranged transmit driving torque generated by the drive device (d5) to each movable section of the hand section (3) via gears meshing with each other.Type: GrantFiled: December 3, 2009Date of Patent: February 4, 2014Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Yuichi Kurita, Atsutoshi Ikeda, Yasuhiro Ono, Tsukasa Ogasawara
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Publication number: 20130285069Abstract: The invention provides an SiC semiconductor element having fewer interface defects at the interface between the SiC and the insulating film of the SiC semiconductor, as well as improved channel mobility. The semiconductor element is provided with at least an SiC semiconductor substrate and an insulating film in contact with the substrate, wherein the insulating film is formed on a specific crystal plane of the SiC semiconductor substrate, the specific crystal plane being a plane having an off-angle of 10-20° relative to the {11-20} plane toward the [000-1] direction or at an off-angle of 70-80° relative to the (000-1) plane toward the <11-20> direction. Through the use of a specific crystal plane unknown in the prior art, interface defects between the SiC semiconductor substrate and the insulating film can be reduced, and channel mobility of the semiconductor element can be improved.Type: ApplicationFiled: August 12, 2011Publication date: October 31, 2013Applicant: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Hiroshi Yano, Yoshihiro Ueoka
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Patent number: 8546815Abstract: Disclosed are an SiC semiconductor element and manufacturing method for an SiC semiconductor element in which the interface state density of the interface of the insulating film and the SiC is reduced, and channel mobility is improved. Phosphorus (30) is added to an insulating film (20) formed on an SiC semiconductor (10) substrate in a semiconductor element. The addition of phosphorous to the insulating film makes it possible to significantly reduce the defects (interface state density) in the interface (21) of the insulating film and the SiC, and to dramatically improve the channel mobility when compared with conventional SiC semiconductor elements. The addition of phosphorus to the insulating film is carried out by heat treatment. The use of heat treatment to add phosphorous to the insulating film makes it possible to maintain the reliability of the insulating film, and to avoid variation in channel mobility and threshold voltage.Type: GrantFiled: December 13, 2010Date of Patent: October 1, 2013Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Hiroshi Yano, Dai Okamoto
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Patent number: 8545807Abstract: The present invention has been created to provide a near infrared high emission rare-earth complex having an excellent light-emitting property in the near infrared region. The near infrared high emission rare-earth complex of the present invention is characterized in that its structure is expressed by the following general formula (1): where Ln(III) represents a trivalent rare-earth ion; n is an integer equal to or greater than three; Xs represent either the same member or different members selected from a hydrogen atom, a deuterium atom, halogen atoms, C1-C20 groups, hydroxyl groups, nitro groups, amino groups, sulfonyl groups, cyano groups, silyl groups, phosphonic groups, diazo groups and mercapto groups; and Z represents a bidentate ligand.Type: GrantFiled: February 26, 2009Date of Patent: October 1, 2013Assignees: National University Corporation Nara Institute of Science and Technology, National University Corporation Shizuoka UniversityInventors: Yasuchika Hasegawa, Hideki Kawai, Tsuyoshi Kawai
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Publication number: 20130236947Abstract: A substrate having rod-like molecules on a surface thereof including: a substrate in which a pattern including a convex portion with a flat upper surface is formed on at least a portion thereof; and a plurality of rod-like molecules, which are formed into rod-like shape, are aligned in line in a direction crossing a molecular length direction of each of the rod-like molecules an the upper surface of the convex portion, and have liquid crystalline states, wherein the molecular length LR of the rod-like molecule is 2.0 or less times LN, which is a length of the rod-like molecule in the molecular length direction within the convex portion; and a method for producing a substrate having rod-like molecules on a surface thereof.Type: ApplicationFiled: March 6, 2013Publication date: September 12, 2013Applicants: Tokyo Ohka Kogyo Co., Ltd., National University Corporation Nara Institute of Science and TechnologyInventors: Masanobu Naito, Yusuke Nakamura, Toshiyuki Ogata, Toshikazu Takayama, Takayuki Hosono
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Publication number: 20130183820Abstract: A silicon carbide layer is thermally etched by supplying the silicon carbide layer with a process gas that can chemically react with silicon carbide, while heating the silicon carbide layer. With this thermal etching, a carbon film is formed on the silicon carbide layer. Heat treatment is provided to the silicon carbide layer to diffuse carbon from the carbon film into the silicon carbide layer.Type: ApplicationFiled: December 5, 2012Publication date: July 18, 2013Applicants: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY, Sumitomo Electric Industries, Ltd.Inventors: Sumitomo Electric Industries, Ltd., National University Corporation Nara Institute of
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Patent number: 8488806Abstract: A separation signal generation unit generates a plurality of separation signals which are independent from one another from the mixed signals for one frame which are converted into those in a frequency region. A mask processing unit judges a noise condition of a first separation signal for each frequency bin on the basis of the first separation signal and second separation signals. The mask processing unit further removes a first noise component obtained on the basis of a judgment result on the noise condition from the first separation signal. A noise amount measuring unit measures the amount of noise in the first separation signal. A noise signal selection unit selects a noise signal for each frequency bin on the basis of the amount of noise measured by the noise amount measuring unit. A noise removing unit removes a second noise component from a noise removal signal inputted from the mask processing unit.Type: GrantFiled: March 26, 2008Date of Patent: July 16, 2013Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Hiroshi Saruwatari, Eiji Baba, Hiromitsu Mori
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Patent number: 8452592Abstract: Provided are a signal separating apparatus and a signal separating method capable of solving the permutation problem and separating user speech to be extracted. The signal separating apparatus separates a specific speech signal and a noise signal from a received sound signal. First, a joint probability density distribution estimation unit of a permutation solving unit calculates joint probability density distributions of the respective separated signals. Then, a classifying determination unit of the permutation solving unit determines classifying based on shapes of the calculated joint probability density distributions.Type: GrantFiled: September 2, 2008Date of Patent: May 28, 2013Assignees: Toyota Jidosha Kabushiki Kaisha, National University Corporation Nara Institute of Science and TechnologyInventors: Tomoya Takatani, Jani Even
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Publication number: 20130130482Abstract: On a substrate, a silicon carbide layer provided with a main surface is formed. A mask is formed to cover a portion of the main surface of the silicon carbide layer. The main surface of the silicon carbide layer on which the mask is formed is thermally etched using chlorine-based gas so as to provide the silicon carbide layer with a side surface inclined relative to the main surface. The step of thermally etching is performed in an atmosphere in which the chlorine-based gas has a partial pressure of 50% or smaller.Type: ApplicationFiled: October 23, 2012Publication date: May 23, 2013Applicants: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY, Sumitomo Electric Industries, Ltd.Inventors: Sumitomo Electric Industries, Ltd., National University Corporation Nara Institute of
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Publication number: 20130126904Abstract: A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on the second region and having the first conductivity type. A trench having an inner surface is formed in the silicon carbide layer. The trench penetrates the second and third regions. The inner surface of the trench has a first side wall and a second side wall located deeper than the first side wall and having a portion made of the second region. Inclination of the first side wall is smaller than inclination of the second side wall.Type: ApplicationFiled: October 23, 2012Publication date: May 23, 2013Applicants: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY, Sumitomo Electric Industries, Ltd.Inventors: Sumitomo Electric Industries, Ltd., National University Corporation Nara Institute of
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Publication number: 20130103993Abstract: A scan asynchronous memory element includes: an asynchronous memory element configured to receive an n-input; and a scan control logic circuit configured to generate an n-bit signal input and the n-input to the asynchronous memory element from a scan input. The scan control logic circuit outputs the signal input when a control signal supplied to the scan control logic circuit has a first bit pattern, the scan control logic circuit outputs the scan input when the control signal has a second bit pattern, and the scan control logic circuit outputs a bit pattern allowing the asynchronous memory element to hold a previous value when the control signal has a bit pattern other than the first and second bit patterns.Type: ApplicationFiled: December 14, 2012Publication date: April 25, 2013Applicant: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGYInventor: National University Corporation Nara Institute Of Science and Technology
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Patent number: 8407009Abstract: A disclosed molecular communication system includes a molecular transmitter configured to transmit an information molecule in which prescribed information is encoded, a molecular receiver configured to receive the information molecule, and a molecular capsule configured to carry the information molecule from the molecular transmitter to the molecular receiver. Each of the molecular transmitter, the molecular receiver, and the molecular capsule has an artificial cell membrane in which at least one kind of molecular switch is embedded, the molecular switch being responsive to an external input signal so as to control association and separation between the molecular transmitter and the molecular capsule, and association and separation between the molecular capsule and the molecular receiver, upon application of the external input signal.Type: GrantFiled: August 20, 2007Date of Patent: March 26, 2013Assignees: NTT DoCoMo, Inc., National University Corporation Nara Institute of Science and TechnologyInventors: Satoshi Hiyama, Yuki Moritani, Tatsuya Suda, Junichi Kikuchi, Yoshihiro Sasaki
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Patent number: 8390913Abstract: Provided is a compound semiconductor nanoparticle that exhibits circularly polarized luminescence characteristics. CdS prepared inside a core of ferritin, which is a cage-like protein, exhibits a high circularly polarized luminescence (CPL). A wavelength of the circularly polarized luminescence (CPL) can be controlled by laser irradiation, thereby enabling utilization of the compound semiconductor nanoparticle in the field of bionanotechnology, for example, in creating a WORM (Write-Once Read-Many times) memory. As the cage-like protein, which is a protein with a cavity formed therein, a protein belonging to the ferritin protein family, such as apoferritin, or a recombinant thereof can be used.Type: GrantFiled: March 26, 2009Date of Patent: March 5, 2013Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Masanobu Naitou, Kenji Iwahori
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Publication number: 20130023113Abstract: A method for manufacturing a MOSFET includes the steps of: introducing an impurity into a silicon carbide layer; forming a carbon layer in a surface layer portion of the silicon carbide layer having the impurity introduced therein, by selectively removing silicon from the surface layer portion; and activating the impurity by heating the silicon carbide layer having the carbon layer formed therein.Type: ApplicationFiled: July 16, 2012Publication date: January 24, 2013Applicants: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY, Sumitomo Electric Industries, Ltd.Inventors: Takeyoshi Masuda, Tomoaki Hatayama
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Patent number: 8357774Abstract: The present invention provides a novel polypeptide or polypeptide derivative which has no risk of infection with a pathogen or propagation of a pathogenic factor and of an undesirable side effect, and which is useful as a carrier of various biologically-active substances or apatite, as well as a process for producing the same. More particularly, the present invention provides a polypeptide comprising a peptide unit having an amino acid sequence represented by the formula: -Pro-X-Gly- (wherein X represents Pro or Hyp) and a peptide unit having an amino acid sequence represented by the formula: -Pro-Hyp(O—Y—Z)-Gly- (wherein Y represents a carbonyl group, a saturated or unsaturated hydrocarbon group with or without a carbonyl group, or a saturated or unsaturated hydrocarbon group with or without a carbonyl group, including an aromatic group, and Z represents a carboxyl group), as well as a process for producing the same.Type: GrantFiled: September 12, 2008Date of Patent: January 22, 2013Assignee: National University Corporation Nara Institute of Science and TechnologyInventor: Masao Tanihara
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Publication number: 20130019345Abstract: Provided is a crystal of a florigen activation complex, including a florigen, a 14-3-3 protein, and a bZIP transcription factor bound to each other. In addition, flowering of a plant is regulated by controlling mechanisms of interactions among those proteins utilizing the crystal. These are achieved as follows. With attention focused on the fact that Hd3a is bound to FD1 via GF14c to form a florigen activation complex, a crystal of the florigen activation complex is produced, conformational information is obtained through the use of the crystal of the florigen activation complex, and the flowering of a plant is regulated by controlling mechanisms of interactions among the florigen and the like utilizing such conformational information.Type: ApplicationFiled: March 17, 2010Publication date: January 17, 2013Applicant: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Izuru Ohki, Ken-ichiro Taoka, Hiroyuki Tsuji, Chojiro Kojima, Ko Shimamoto
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Publication number: 20130013247Abstract: A semiconductor device and the like that can determine the performance of a semiconductor integrated circuit with higher accuracy even when test environment fluctuates. The semiconductor device detects degradation of the semiconductor integrated circuit, including measurement unit that measures temperature and voltage, decision unit that judges whether the test is executed within an allowable test timing in the detection target circuit portion at each test operation frequency and decides a maximum test operation frequency and calculation unit that converts a maximum test operation frequency into that at a standard temperature and voltage and calculates a degradation amount. The semiconductor integrated circuit has a monitor block circuit that monitors the values for the measurement unit to measure temperature and voltage. The measurement unit has estimation unit that estimates temperature and voltage of a detection target circuit portion based on the monitored values.Type: ApplicationFiled: March 14, 2011Publication date: January 10, 2013Applicants: KYUSHU INSTITUTE OF TECHNOLOGY, TOKYO METROPOLITAN UNIVERSITY, NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Yasuo Sato, Seiji Kajihara, Michiko Inoue, Tomokazu Yoneda, Hyunbean Yi, Yukiya Miura