Abstract: A surface discharge device performing functions of a trigger and electron beam generator includes a cylinder shaped member formed from a dielectric material with dielectric constant ?>100, in which a central opening is formed having a conical or cylindrical shape. An internal electrode is electrically coupled to the internal surface of the cylinder shaped member. An external electrode covers the external surface of the cylinder shaped member. A triggering pulse is applied between the external and internal electrodes to generate emission of electrons in the central opening and formation of the conducting plasma to ignite the device and serve as a source of electrons for generating an electron beam. The conducting plasma charges a capacitor formed by the cylinder shaped dielectric member and the external electrode. The cylinder shaped member is positioned in a hollow cathode having a central bore hole in the bottom.

Abstract: A method and system for non-contact measurements of microwave capacitance of miniature structures patterned on wafers used for production of modern integrated circuits. A near-field balanced two-conductor probe is brought into close proximity to a test key built on a wafer of interest and replicating the miniature structure of interest. The resonant frequency of the probe for the test key is measured. The probe is then positioned at the same distance from an “open” calibration key and “short” calibration key, and the resonance frequencies of the probe for the calibration keys are measured. A shear force distance control mechanism maintains the distance between the tip of the probe and the measured test key and calibration keys. The microwave capacitance of the test key is then calculated in accordance with a predefined formula.

Abstract: Circuit flaws in microelectronic circuitry present regions of high resistance in which a current distribution deviates from that of a defect-free circuit. The altered current distribution emits a correspondingly altered magnetic field in accordance with Ampere's Law. When compared with the magnetic field of a defect-free circuit, the anomaly in the magnetic field of the defective device is detected and the location of the circuit flaw may be determined therefrom. As the anomaly in the magnetic field is very small in magnitude, a sensitive magnetic microscope is utilized to obtain images of the magnetic fields of a defect-free reference device and a device-under-test. The distance between the magnetic sensor and the devices being scanned is precisely controlled to minimize influences of scanning distance on the difference in measured magnetic field strength. Comparative image analysis reveals the location of the circuit flaw.

Abstract: A probe for non-destructive determination of complex permittivity of a material and for near field optical microscopy is based on a balanced multi-conductor transmission line structure created on a dielectric substrate member which confines the probing field within a sharply defined sampling volume in the material under study. A method for manufacturing dielectric support member based probes includes anisotropically depositing a 50-100 ? thick underlayer of Cr, Ni, W or Ta onto the dielectric support member, anisotropically depositing conductive material onto the Cr, Ni, W or Ta underlayer, and removing the unwanted conductive material at the sides of the dielectric support member to electrically isolate the created conductive strips.

Abstract: In the method and system for non-contact measurements of microwave capacitance of test structures patterned on wafers used for production of modern integrated circuits, a near-field balanced two-conductor probe is brought into close proximity to a test structure, and the resonant frequency of the probe for the test structure is measured. The probe is then positioned at the same distance from the uniform metallic pad, and the resonance frequency of the probe for the uniform metallic pad is measured. A shear force distance control mechanism maintains the distance between the tip of the probe and the metallic pad equal to the distance between the tip of the probe and the test structure. The microwave capacitance of the test structure is then calculated in accordance with a predefined formula. The obtained microwave capacitance may be further used for determining possible defects of the test structure.

Abstract: A method for measuring a material's complex permittivity is provided where a near-field microwave probe is positioned a predetermined distance from a first and a second standard sample for measuring a relative resonant frequency shift of the near-field microwave probe for standard samples. Based on measurements, calibration coefficients are calculated. A relative resonant frequency shift of the near-field microwave probe for a sample under study is measured by fast frequency sweep technique while the distance between the tip of the probe and the sample under the study is maintained nominally at the distance between the tip of the probe and each standard sample during a calibration procedure by a shear-force based distance control mechanism. Also, the change in the quality factor of the probe for unloaded and loaded resonator is measured.

Abstract: There is provided a deposition system (1) for yielding substantially uniform deposition of an evaporant material onto a substrate. The deposition system (1) comprises: a source (10) for generating a coherent energy beam; a substantially planar target (60) containing the evaporant material and disposed in spaced relation to the substrate; a focusing element (30) optically coupled to the source for focusing the coherent energy beam onto the target (60); and, an actuator (40) coupled to the focusing element (30) for reversibly translating the focusing element (30) along a scanning path directed substantially parallel to a target plane defined by the target (60). The focused coherent energy beam defines an impingement spot (14) on the target (60). The impingement spot (14) is displaced responsive to the translation of the focusing element (30) along the scanning path. The focus of the coherent energy beam on the target (60) thus remains substantially preserved.

Abstract: A probe for non-destructive determination of complex permittivity of a material and for near field optical microscopy is based on a balanced multi-conductor transmission line structure created on a dielectric substrate member which confines the probing field within a sharply defined sampling volume in the material under study.

Abstract: A planetary multi-substrate holder system for material deposition includes a substrate holder having circumferentially shaped openings in which disk-like substrates of a smaller diameter than the diameter of the openings are maintained. Upon rotation of the substrate holder, either in a vertical plane, or in a horizontal plane, the substrates self-rotate within each opening due to either gravity force (for vertically rotated substrate holder), or due to centrifugal force (for horizontally rotated substrate holder) applied to the substrates. The planetary multi-substrate system obviates the need for mechanical individual gears to rotate substrates for material deposition, and, as a sequence, yields an extended service life of the system, as well as agreeability with high temperatures used in material deposition process, and reduced cost of a final product.

Abstract: An apparatus for localized measurements of complex permittivity of a material is provided. A probe (10) analyzes the complex permittivity of a sample (11), the probe (10) having a balanced two conductor transmission line (12) formed of conductive segments (13 and 14). A probing end (15) of the transmission line (12) is brought within close proximity of sample (11) and an opposite end (16) of the transmission line is connected to a terminating plate (17) to form a resonator structure (18) for measurement of the complex permittivity of sample (11).

Abstract: There is provided a deposition system (1) for yielding substantially uniform deposition of an evaporant material onto a substrate. The deposition system (1) comprises: a source (10) for generating a coherent energy beam; a substantially planar target (60) containing the evaporant material and disposed in spaced relation to the substrate; a focusing element (30) optically coupled to the source for focusing the coherent energy beam onto the target (60); and, an actuator (40) coupled to the focusing element (30) for reversibly translating the focusing element (30) along a scanning path directed substantially parallel to a target plane defined by the target (60). The focused coherent energy beam defines an impingement spot (14) on the target (60). The impingement spot (14) is displaced responsive to the translation of the focusing element (30) along the scanning path. The focus of the coherent energy beam on the target (60) thus remains substantially preserved.

Abstract: A combinatorial synthesis system is provided which combines pulsed laser deposition techniques with the continuous composition spread technique in which a plurality of targets made of different ingredient materials are arranged in a predetermined relationship and are ablated by an energetic beam focused on the surface of a particular target. By maintaining the energetic beam in a stationary state, the target carousel is rotated so as to bring a particular target in engagement with the energetic beam. The targets are brought into engagement with the energetic beam in a predetermined sequence so that different materials are deposited onto the substrate in a predetermined sequence. Distributed deposition areas surround each deposition center and overlap each with the other to form a continuous compositional spread on the surface of the substrate.

Abstract: A film deposition system for coating large surfaces includes a target translated in parallel to the surface, and an energetic beam (laser beam) directed in parallel to the surface to be coated and impinging on the target, so that a plasma plume extends from the target to the surface to be coated. Translational motion of the target relative to the surface to be coated causes the plasma plume to scan over the surface and to deposit a thin film of a material from the target on the surface. Surfaces of unlimited size can be coated by this technique. The system provides short target-surface distances, high deposition rates, and can utilize small targets. An arrangement including several independently controlled and moving targets is utilized for coating surfaces having complicated shapes.

Abstract: A superconducting garnet thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting (HTSC) layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12) with the first perovskite layer being aligned in a cube on cube parallel orientation with respect to the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) at an orientation of 45.degree. to first layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer.

Abstract: A non-linear optical thin film layer system (10) is provided for integrated optics applications where a non-linear optical thin film layer (18) is integrated with a gallium-arsenide substrate (12). A first encapsulating layer (20) is deposited on lower surface (26), peripheral sides (30), and an upper surface peripheral region (28) of said gallium-arsenide substrate (12). A second encapsulating and buffer layer (14) is epitaxially grown on an upper surface of said gallium-arsenide substrate (12) and on the encapsulated upper surface peripheral region (28) of said gallium-arsenide substrate (12). A perovskite layer (16) is epitaxially grown on an upper surface of the layer (14). A non-linear optical thin film layer (18) is epitaxially grown on an upper surface of the perovskite layer (16) and is lattice matched to this layer.

Abstract: There is provided a scanning laser beam delivery system for use in pulsed laser deposition of a target evaporant (40) onto a substrate (50). The system includes a laser beam source (10) for generating a pulsed laser beam, a beam transfer assembly (20) optically coupled to laser beam source (10) for directing the generated pulse laser beam along an optical path (15) having a terminal segment (15') which impinges upon target evaporant (40); and, a control mechanism (30) coupled to beam transfer assembly (20). Beam transfer assembly (20) includes a scanning mechanism (22) for reversibly translating terminal segment (15') of optical path (15) along a scan direction substantially normal to the direction along which terminal segment (15') has a directional component. Actuation of scanning mechanism (22) is automatically controlled by control mechanism (30).

Abstract: A superconducting thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer. A high temperature superconducting layer (18) is epitaxially grown on an upper surface of the second perovskite layer (16) and is lattice matched to the second perovskite compound layer (16) for incorporation of passive components within the high temperature superconducting layer (18) having high frequency microwave applications.

Abstract: A high frequency superconducting device structure is disclosed which comprises an alkaline earth fluoride substrate with a magnesium oxide lower buffer layer on the alkaline earth substrate and an upper buffer layer epitaxial template layer on the magnesium oxide layer for providing a template for epitaxial growth of a high temperature superconducting film on the upper buffer layer, providing reduced dielectric and conducting losses at high frequencies. The disclosed structure may be incorporated into a multi-chip module (MCM) for providing very high speed interconnections.

Abstract: This invention directs itself to a pulsed laser passive filter deposition system (10) which provides a blocking and transparent mask mechanism (34) placed between a target (14) and a substrate (12) to be coated. The blocking and transparent mask mechanism (34) includes a blocking member (36) which casts a blocking shadow having a greater cross-sectional area than the substrate (12), to block linearly travelling clustered species particulates (22) from impinging on the substrate (12). The blocking and transparent mask mechanism (34) also includes annularly shaped disk members (38 and 44) having openings (40 and 46) formed in a central portion to allow passage of the atomic species (20) of the composition being coated on the substrate (12) where the atomic species (20) is deflected by impingement with background gas molecules (26). In this manner, the substrate (12) is coated with the atomic species (20) in a uniform coating without having the clustered species (22) being coated on the substrate (12).

Abstract: A high frequency superconducting device structure is disclosed which comprises an alkaline earth fluoride substrate with a magnesium oxide lower buffer layer on the alkaline earth substrate and an upper buffer layer epitaxial template layer on the magnesium oxide layer for providing a template for epitaxial growth of a high temperature superconducting film on the upper buffer layer, providing reduced dielectric and conducting losses at high frequencies. The disclosed structure may be incorporated into a multi-chip module (MCM) for providing very high speed interconnections.