Patents Assigned to NexGen Semi Holding, Inc.
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Patent number: 11737970Abstract: During nanoscale manufacture on a substrate, payload active agents are loaded on a delivery platform, with a release layer between the delivery platform and the payload active agent and an encapsulate over the payload active agent. The combined delivery platform, release layer, active agent payload, and encapsulant form a nanoscale drug delivery vehicle for subsequent delivery to a patient. The nanoscale drug delivery vehicle is small enough to permeate through the cell and deliver the payload active agent within the cell via reducing the retaining functionality of the release layer and degrading of the encapsulant. The nanoscale drug delivery vehicle offers a series of improved features including greater control of size, shape, dosage, bioavailability, cell targeting, and release timing.Type: GrantFiled: November 23, 2016Date of Patent: August 29, 2023Assignee: NEXGEN SEMI HOLDING, INC.Inventor: Michael John Zani
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Patent number: 11605522Abstract: A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy less than or equal to 500 keV.Type: GrantFiled: February 14, 2020Date of Patent: March 14, 2023Assignee: NexGen Semi Holding, Inc.Inventors: Mark Joseph Bennahmias, Michael John Zani, Jeffrey Winfield Scott
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Patent number: 11335537Abstract: A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.Type: GrantFiled: April 5, 2021Date of Patent: May 17, 2022Assignee: NexGen Semi Holding, Inc.Inventors: Mark Joseph Bennahmias, Michael John Zani, Jeffrey Winfield Scott
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Patent number: 10991545Abstract: A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.Type: GrantFiled: August 5, 2019Date of Patent: April 27, 2021Assignee: NexGen Semi Holding, Inc.Inventors: Mark Joseph Bennahmias, Michael John Zani, Jeffrey Winfield Scott
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Patent number: 10566169Abstract: A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy less than or equal to 500 keV.Type: GrantFiled: June 30, 2009Date of Patent: February 18, 2020Assignee: NexGen Semi Holding, Inc.Inventors: Mark Joseph Bennahmias, Michael John Zani, Jeffrey Winfield Scott
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Patent number: 8658994Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.Type: GrantFiled: January 20, 2012Date of Patent: February 25, 2014Assignee: Nexgen Semi Holding, Inc.Inventors: Michael John Zani, Mark Joseph Bennahmias, Jeffrey Winfield Scott
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Patent number: 8409984Abstract: Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlO3 as a gate tunneling dielectric. Other types of memory devices (DIMMS, DRAM, and DDR) made with patterned ALD of LaAlO3 as a gate dielectric are also possible.Type: GrantFiled: June 10, 2010Date of Patent: April 2, 2013Assignee: NexGen Semi Holding, Inc.Inventors: Mark Joseph Bennahmias, Michael John Zani, Jeffrey Winfield Scott
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Publication number: 20130040458Abstract: A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.Type: ApplicationFiled: October 2, 2012Publication date: February 14, 2013Applicant: NEXGEN SEMI HOLDING, INC.Inventor: NexGen Semi Holding, Inc.
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Patent number: 8278027Abstract: A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.Type: GrantFiled: July 21, 2011Date of Patent: October 2, 2012Assignee: Nexgen Semi Holding, Inc.Inventors: Jeffrey Scott, Michael Zani, Mark Bennahmias, Mark Mayse
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Publication number: 20120112323Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.Type: ApplicationFiled: January 20, 2012Publication date: May 10, 2012Applicant: NEXGEN SEMI HOLDING, INC.Inventors: Michael John Zani, Mark Joseph Bennahmias, Mark Anthony Mayse, Jeffrey Winfield Scott
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Publication number: 20120028464Abstract: A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.Type: ApplicationFiled: July 21, 2011Publication date: February 2, 2012Applicant: NEXGEN SEMI HOLDING, INC.Inventors: Jeffrey Scott, Michael Zani, Mark Bennahmias, Mark Mayse
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Patent number: 7993813Abstract: A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam.Type: GrantFiled: November 21, 2007Date of Patent: August 9, 2011Assignee: NexGen Semi Holding, Inc.Inventors: Jeffrey Scott, Michael Zani, Mark Bennahmias, Mark Mayse
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Publication number: 20110167913Abstract: Imaging devices for measuring a structure of a surface and methods of use are provided. In certain embodiments, an imaging device includes at least one nano-mechanical resonator pair. The pair includes a reference resonator having a reference resonant frequency, and a sense resonator having a first sense resonant frequency. The device is configured to expose the sense resonator to the surface such that the sense resonator has a second sense resonant frequency. The device is also configured to measure the structure of the surface based on a difference between the second sense resonant frequency and the reference resonant frequency. In certain embodiments, an imaging device for measuring the structure of a surface includes an array of sense nano-electromechanical resonators. In certain embodiments, the array of single nano-electromechanical resonators is advantageously arranged in a staggered configuration.Type: ApplicationFiled: October 15, 2010Publication date: July 14, 2011Applicant: NEXGEN SEMI HOLDING, INC.Inventors: Mark Joseph Bennahmias, Michael John Zani
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Publication number: 20110065237Abstract: Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlO3 as a gate tunneling dielectric. Other types of memory devices (DIMMS, DRAM, and DDR) made with patterned ALD of LaAlO3 as a gate dielectric are also possible.Type: ApplicationFiled: June 10, 2010Publication date: March 17, 2011Applicant: NEXGEN SEMI HOLDING, INC.Inventors: Mark Joseph Bennahmias, Michael John Zani, Jeffrey Winfield Scott
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Publication number: 20100098922Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.Type: ApplicationFiled: December 18, 2009Publication date: April 22, 2010Applicant: NEXGEN SEMI HOLDING, INC.Inventors: Michael John Zani, Mark Joseph Bennahmias, Mark Anthony Mayse, Jeffrey Winfield Scott
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Patent number: 7659526Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.Type: GrantFiled: August 20, 2007Date of Patent: February 9, 2010Assignee: NexGen Semi Holding, Inc.Inventors: Michael John Zani, Mark Joseph Bennahmias, Mark Anthony Mayse, Jeffrey Winfield Scott
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Patent number: 7507960Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.Type: GrantFiled: August 17, 2007Date of Patent: March 24, 2009Assignee: NexGen Semi Holding, Inc.Inventors: Michael John Zani, Mark Joseph Bennahmias, Mark Anthony Mayse, Jeffrey Winfield Scott
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Patent number: 7501644Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.Type: GrantFiled: August 20, 2007Date of Patent: March 10, 2009Assignee: NexGen Semi Holding, Inc.Inventors: Michael John Zani, Mark Joseph Bennahmias, Mark Anthony Mayse, Jeffrey Winfield Scott
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Patent number: 7495242Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.Type: GrantFiled: August 20, 2007Date of Patent: February 24, 2009Assignee: NexGen Semi Holding, Inc.Inventors: Michael John Zani, Mark Joseph Bennahmias, Mark Anthony Mayse, Jeffrey Winfield Scott
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Patent number: 7495244Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.Type: GrantFiled: August 20, 2007Date of Patent: February 24, 2009Assignee: NexGen Semi Holding, Inc.Inventors: Michael John Zani, Mark Joseph Bennahmias, Mark Anthony Mayse, Jeffrey Winfield Scott