Abstract: An induction heating device according to the present invention includes: an induction heating coil 10 with a conductor 100 wound around a predetermined axis line AL; a member 11 including at least one soft magnetic material 110, the at least one soft magnetic material 110 being disposed at or on an outer side of each of axial end portions 102 of the induction heating coil 10 in an extending direction of the axis line AL; and a heating object 2 disposed on an inner side of the induction heating coil 10 and the member 11, the heating object 2 being configured to be heatable by induction heating using a magnetic flux from the induction heating coil 10.

Abstract: A butterfly valve 100 provided in a flow path for a first fluid flowing through a heat exchanger. The butterfly valve 100 includes: a valve plate 110 provided in the flow path; a shaft 120 for rotatably supporting the valve plate 110 in the flow path; and at least one valve plate auxiliary member 130 in contact with at least one plate surface 111a, 111b of the valve plate 100, the valve plate auxiliary member 130 having an extending portion 131 extending radially outwardly from an outer peripheral surface 112 of the valve plate 110. The valve plate auxiliary member 130 is made of a material having a lower Young's modulus than that of the valve plate 110.

Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate; a composite plate joined to a lower surface of the ceramic plate; a cooling plate formed of a metal material, disposed on a lower surface of the composite plate; a first fastener that fastens the composite plate and the cooling plate; a support plate that is formed of an insulating material and supports a lower surface of the cooling plate; and a second fastener that fastens the cooling plate and the support plate, wherein, when the ceramic plate is heated from room temperature to high temperature, a first layered body including the ceramic plate and the composite plate deforms such that a central portion of the first layered body is convex, and a second layered body including the cooling plate and the support plate deforms such that a central portion of the second layered body is convex.

Abstract: A first frame is supported by a heat sink plate, surrounds an unmounted region of the heat sink plate, contains a resin, and has a first surface. A second frame contains a resin, and has a second surface opposing the first surface. An external terminal electrode passes between the first surface and the second surface. An adhesive layer contains a resin, and includes a lower portion, an upper portion, and an intermediate portion. The lower portion connects the external terminal electrode and the first surface to each other. The upper portion connects the external terminal electrode and the second surface to each other. The intermediate portion is disposed within a through hole of the external terminal electrode, and connects the lower portion and the upper portion to each other.

Abstract: A pillar shaped honeycomb structure, including: a porous partition wall that define a plurality of cells, the plurality of cells forming flow paths for a fluid, the plurality of cells extending from an inflow end face to an outflow end face; and an outer peripheral wall located at the outermost circumference. The plurality of cells include: a plurality of first cells; and a plurality of second cells having a lower cross-sectional area than that of the plurality of first cells. An interior of each of the second cells is filled with a material comprising a magnetic substance. Each of the second cells are arranged adjacent to at least one of the first cells.

Abstract: A method for producing a honeycomb structure includes: a forming step of extruding a forming raw material containing a ceramic raw material mainly based on silicon carbide and metal silicon to obtain a honeycomb formed body, the honeycomb formed body comprising: an outer peripheral wall; and partition walls; a drying step of drying the honeycomb formed body to obtain a honeycomb dried body; and a firing step of firing the honeycomb dried body to obtain a honeycomb fired body. The drying step includes: a first drying step of subjecting the honeycomb formed body to dielectric drying at a frequency of from 2 to 200 MHz so that a moisture scattering rate of the honeycomb formed body after dielectric drying is from 30 to 85%; and a second drying step of subjecting the honeycomb formed body having the moisture scattering rate of from 30 to 85% to hot air drying.

Abstract: A catalyst support for induction heating includes: a honeycomb structure including a pillar shaped honeycomb structure portion having: an outer peripheral wall; and a partition wall disposed on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells, each of the cells extending from an end face on an inlet side to an end face on an outlet side in a gas flow direction to form a flow path; a catalyst supported onto an interior of the partition wall; and at least one magnetic body provided within the honeycomb structure, wherein the catalyst support has a region A where the catalyst is not supported, at least on the end face side of the catalyst support on the inlet side in the gas flow direction, and wherein the magnetic body is arranged at least in the region A in the gas flow direction.

Abstract: A method of operating an electrochemical device includes the steps of: applying a first adsorption voltage to a function electrode while supplying a predetermined gas to the function electrode; and switching the first adsorption voltage to a second adsorption voltage higher than the first adsorption voltage while maintaining the supply of the predetermined gas to the function electrode.

Abstract: A wafer placement table includes: a ceramic plate including a wafer placement portion having a reference surface on which a number of small protrusions are provided; a cooling plate including a refrigerant flow path; a joining layer with which the ceramic plate and the cooling plate are joined; a recessed groove provided in the reference surface and having a bottom surface positioned lower than the reference surface; a plug arrangement hole passing through the ceramic plate and being open to the bottom surface of the recessed groove; a porous plug disposed in the plug arrangement hole, the porous plug having a top surface positioned at the same height as the bottom surface of the recessed groove and allowing gas to flow; and a gas supply path through which gas is supplied to the porous plug.

Abstract: A catalyst support for induction heating includes: a honeycomb structure including a pillar shaped honeycomb structure portion having: an outer peripheral wall; and a partition wall disposed on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells, each of the cells extending from an end face on an inlet side to an end face on an outlet side in a gas flow direction to form a flow path; a catalyst supported onto an interior of the partition wall; and at least one magnetic body provided within the honeycomb structure, wherein the catalyst support has a region A where the catalyst is not supported, at least on the end face side of the catalyst support on the inlet side in the gas flow direction, and wherein the magnetic body is arranged at least in the region A in the gas flow direction.

Abstract: A catalyst device includes a central axis and a catalyst support. The catalyst support includes a slit that is arranged to be orthogonal to the central axis. The slit is arranged to be symmetrical with respect to an arbitrary plane that includes the central axis.

Abstract: A wafer placement table includes a ceramic plate that has at least a wafer placement part at an upper surface thereof, a cooling plate that is joined to a lower surface of the ceramic plate and that has a refrigerant flow path, gas common paths that are provided above the refrigerant flow path, gas introduction paths that extend from a lower surface of the cooling plate to a corresponding one of the gas common paths, and a plurality of gas distribution paths, that are provided for the gas common paths. The gas distribution path that is disposed at an outermost periphery of the ceramic plate is provided at a position that does not overlap the refrigerant flow path in plan view.

Abstract: Provided is an air electrode/separator assembly including a hydroxide ion conductive separator including a hydroxide ion conductive solid electrolyte; and an air electrode layer having a thickness of 1,000 nm or smaller that is provided on one side of the hydroxide ion conductive separator and that includes a hydroxide ion conductive material, an electron conductive material, and an air electrode catalyst, provided that the hydroxide ion conductive material may be the same material as the hydroxide ion conductive solid electrolyte or the air electrode catalyst, and provided that the electron conductive material may be the same material as the air electrode catalyst.

Abstract: A ceramic heater includes a ceramic plate having a surface that serves as a wafer placement surface, resistance heating elements that are embedded in the ceramic plate, a tubular shaft that supports the ceramic plate from a rear surface of the ceramic plate, a recess that is formed in a within-shaft region of the rear surface of the ceramic plate, the within-shaft region being surrounded by the tubular shaft, and terminals that are disposed to be exposed at a side surface of the recess and that supply electric power to the resistance heating element.

Abstract: In a gas sensor, oxygen pumping control is performed to pump oxygen from the surroundings of an outer side pump electrode into the surroundings of a reference electrode. In addition, during execution of the oxygen pumping control, a pump current Ip2 is measured when oxygen originating from NOx is pumped out from the surroundings of a measurement electrode so that a voltage V2 reaches a target voltage V2*. Then, the NOx concentration of a measurement-object gas is calculated based on Ip2. In the gas sensor, the NOx concentration is corrected based on DVref which is the difference between Vref1 and Vref2, wherein Vref1 is the voltage across the reference electrode and the outer side pump electrode when the oxygen pumping control is not performed, and Vref2 is the voltage across the reference electrode and the outer side pump electrode when the oxygen pumping control is performed.

Abstract: A method of adjusting heat uniformity on a wafer mounting surface of a wafer mount having a ceramic base including the wafer mounting surface which can heat a wafer through energization and a cooling plate includes: a) preparing the wafer mount including the cooling plate including: a base including a flow path of a coolant; and a lid detachable from the base; b) measuring a temperature distribution with the lid being attached on the base while heating through the energization and cooling; c) detaching the lid and locally adjusting a shape of the flow path when the temperature distribution does not satisfy a predetermined criterion; and d) remeasuring the temperature distribution after adjusting the shape of the flow path, with the lid being attached on the base while heating through the energization and cooling, wherein the steps c) and d) are repeated until the remeasured temperature distribution satisfies the criterion.

Abstract: A method of regenerating an acid gas adsorption device includes the steps of: causing an acid gas to be adsorbed to an acid gas adsorption material by supplying a gas including the acid gas to an acid gas adsorption device so that the gas is brought into contact with an acid gas adsorption layer; causing the acid gas to be desorbed from the acid gas adsorption material; removing the acid gas adsorption layer of the acid gas adsorption device, which has been subjected to the step of causing the acid gas to be adsorbed and the step of causing the acid gas to be desorbed, from a surface of a base material; and forming an acid gas adsorption layer including a porous carrier and an acid gas adsorption material on the surface of the base material from which the acid gas adsorption layer has been removed.

Abstract: A porous composite includes a porous base material and a porous collection layer provided on a collection surface of the base material. The collection layer includes particles deposited in pores of the collection surface. In a plan view of the collection surface, the proportion of the area of a covered region that is covered with the collection layer out of the collection surface is less than or equal to 70%, and the proportion of the area of a pore region out of a non-covered region that is not covered with the collection layer is less than or equal to 15%.

Abstract: A multi-zone heater includes an outer circumferential zone heater and first and second elemental wire portions. The outer circumferential zone heater is a coil that is provided in an outer circumferential zone of a ceramic substrate in the same plane as a plane in which a central zone heater is provided and that is routed throughout the outer circumferential zone in a unicursal manner from one end portion to the other end portion in the outer circumferential portion. The first elemental wire portion extends from a first terminal, passes through a central portion, is connected to the one end portion of the outer circumferential zone heater, and has a meandering shape in plan view. The second elemental wire portion extends from a second terminal, passes through the central portion, is connected to the other end portion of the outer circumferential zone heater, and has a meandering shape in plan view.

Abstract: An electrostatic chuck includes a ceramic base, a ceramic dielectric layer, an electrostatic electrode, and a ceramic insulating layer. The ceramic dielectric layer is positioned on the ceramic base and is thinner than the ceramic base. The electrostatic electrode is embedded between the ceramic dielectric layer and the ceramic base. The ceramic insulating layer is positioned on the ceramic dielectric layer and is thinner than the ceramic dielectric layer. The ceramic insulating layer has a higher volume resistivity and withstand voltage than the ceramic dielectric layer, and the ceramic dielectric layer has a higher dielectric constant than the ceramic insulating layer.