Patents Assigned to Nichia Kagaky Kogyo K.K.
  • Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
    Patent number: 5334277
    Abstract: A method of growing in vapor phase a semiconductor crystal layer supplies a reaction gas to a portion above the surface of a heated substrate so as to be parallel or obliquely to the substrate, and uses a transparent blow tube widened toward its blow port like a funnel to blow a pressing gas, which is inert with respect to the reaction gas, toward the substrate, thereby bringing the reaction gas into contact with the surface of the substrate.
    Type: Grant
    Filed: October 22, 1991
    Date of Patent: August 2, 1994
    Assignee: Nichia Kagaky Kogyo K.K.
    Inventor: Shuji Nakamura