Patents Assigned to Nikon Precision Incorporated
  • Patent number: 6436589
    Abstract: This invention includes a reticle used for making a semiconductor device in a photolithography process. The reticle has a device exposure region having sides and a device pattern within an area defined by the sides, an opaque chrome region disposed adjacent to the device region, and a kerf region surrounded by the opaque chrome region, the kerf region being offset from the sides of the device exposure region by the opaque chrome region. The reticle should facilitate a double exposure method of a photolithography process by interleaving adjacent exposures of a wafer during the photolithography process, while allowing the single exposure of the respective kerfs.
    Type: Grant
    Filed: December 8, 2000
    Date of Patent: August 20, 2002
    Assignee: Nikon Precision Incorporated
    Inventor: Scott D. Smith