Patents Assigned to Nippon Electronic Glass Co., Ltd.
  • Patent number: 9598307
    Abstract: Devised are a glass and glass substrate, which contain an alkaline component at a low content, are low in density and thermal expansion coefficient, are high in strain point and Young's modulus, and are excellent in devitrification resistance, meltability, formability, and the like. That is, the glass of the present invention includes as a glass composition, in terms of mass %, 58 to 70% of SiO2, 16 to 25% of Al2O3, 3 to 8% of B2O3, 0 to 5% of MgO, 3 to 13% of CaO, 0 to 6% of SrO, 0 to 6% of BaO, 0 to 5% of ZnO, 0 to 5% of ZrO2, 0 to 5% of TiO2, and 0 to 5% of P2O5.
    Type: Grant
    Filed: December 6, 2013
    Date of Patent: March 21, 2017
    Assignee: NIPPON ELECTRONIC GLASS CO., LTD.
    Inventors: Shinkichi Miwa, Masahiro Hayashi
  • Patent number: 9181122
    Abstract: In an annealing zone (3) of a glass sheet producing method, a curved portion (5) is formed by curving a glass ribbon (G) in a width direction, and a concavo-convex direction in a front and back direction of the curved portion (5) is reversed at least between an upper side and a lower side of a part of a region in the width direction of the glass ribbon (G). Therefore, a bending resistance in an upper and lower direction of the glass ribbon (G) and a bending resistance in the width direction of the glass ribbon (G) are increased.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: November 10, 2015
    Assignee: NIPPON ELECTRONICS GLASS CO., LTD.
    Inventors: Hidetaka Oda, Noritomo Nishiura, Koki Ueda, Tomonori Kano
  • Patent number: 7106941
    Abstract: The optical communication device substrate according to the present invention includes one of ceramic and glass ceramic each having an average thermal expansion coefficient of ?55 to ?120×10?7°/C. in the temperature range of ?40 to +100°C. and each containing one of a ?-quartz solid solution and a ?-eucryptite solid solution as a main crystal. In the substrate, maximum thermal expansion hysteresis that occurs when temperature rise from ?40°C.to 100°C. at a rate of 1°C./min and temperature lowering from ?100°C.to ?40°C. at a rate of 1°C./min are performed is less than 12 ppm.
    Type: Grant
    Filed: August 4, 2004
    Date of Patent: September 12, 2006
    Assignee: Nippon Electronic Glass Co., Ltd.
    Inventors: Takahiro Matano, Satoru Yoshihara