Patents Assigned to Nippon Mining Co., Ltd.
  • Patent number: 5186816
    Abstract: A high aromatic-content solvent having a boiling point range of 185.degree.-245.degree. C. and a mixed aniline point of not higher than 21.degree. C. is produced by reforming a petroleum fraction containing at least 50% by volume of components having a boiling point range of 150.degree.-215.degree. C. and then subjecting to a fractional distillation.
    Type: Grant
    Filed: March 12, 1990
    Date of Patent: February 16, 1993
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Fumio Maruyama, Shiro Aizawa, Kazuo Fujiyoshi
  • Patent number: 5173127
    Abstract: A semi-insulating InP single crystal, semiconductor device with a substrate of crystal and processes of producing the same are disclosed. The crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all native Fe, Co and Cr of 0.05 ppmw or less. The crystal has a resistivity of 1.times.10.sup.6 .OMEGA..multidot.cm or more and a mobility of above 3,000 cm.sup.2 /V.multidot.s both at 300 K. A process of producing the crystal includes a step of heat-treating the intermediate under 6 kg/cm.sup.2 of phosphorus vapor pressure. The produced semiconductor device is a MIS device operating in essentially the same high-speed manner as a HEMT.
    Type: Grant
    Filed: February 28, 1991
    Date of Patent: December 22, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Haruhito Shimakura, Osamu Oda, Keiji Kainosho
  • Patent number: 5169083
    Abstract: A method of winding a narrow strip having a width W on a bobbin at an angle.theta. to the rotational axis of the bobbin and at a pitch P, while the bobbin and the strip are being relatively traversed over an axial stroke S of the bobbin, characterized in that setting the integral part as A and the decimal part as B of the calculated numerical value of rotational number n the bobbin per reciprocating traverse of the bobbin or strip which is expressed according to the formula n=2 S/P, the winding is carried on, in the case when P<2W/sin .theta., while controlling at least any one of P, S, and (P-W/sin.theta.) so that (1-W/P sin.theta.)<B<W/P sin .theta.. Thus, A narrow strip can be soundly wound on a bobbins while avoiding any collapse or other disorder in winding or any damage of the strip by adjusting the value of B that depends delicately upon the values of P and S.
    Type: Grant
    Filed: October 9, 1990
    Date of Patent: December 8, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Takeshi Sannohe, Sinji Hasumi, Hidehiko Sou
  • Patent number: 5161972
    Abstract: In a method and device for fixing a denture to the root cap, which is embedded in the tooth root, non-plated platinum magnet containing from 33-47% of Pt is attached to the inner or lower surface of the denture so as to generate the magnetic retention between the magnet and the root cap.
    Type: Grant
    Filed: August 31, 1990
    Date of Patent: November 10, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Yasuhiro Matsui, Kazuhiko Fukamachi
  • Patent number: 5160552
    Abstract: This invention permits, in a colored galvanized coating using Ti-Zn, Mn-Zn, Ti-Mn-Zn, (Ti, Mn)-(Cu, Ni, Cr)-Zn, etc., to clearly and stably develop yellow, purple, green, blue or other color by controlling the composition of a galvanizing bath and oxidizing conditions. Further, a gold, dark red, olive gray and iridescence color which have not yet obtained can be developed. The color development effected by this invention is clearer than conventional. Instead of galvanizing, the spraying process may be adopted. The surface painting on the colored zinc coating is effective.
    Type: Grant
    Filed: May 2, 1991
    Date of Patent: November 3, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Masatoshi Tomita, Susumu Yamamoto, Chikara Tominaga
  • Patent number: 5153563
    Abstract: A fire sensing system, a process for sensing a fire and an environment monitor are disclosed. The system includes infrared sensors with sensing wavelength bands sensing an infrared radiation from an infrared source. One of the sensing wavelength bands is a CO.sub.2 -molecular resonance radiation wavelength band. The system determines whether a disastrous fire occurs or not on the basis of outputs of the sensors and a change in a ratio of the outputs. The process computes the temperature of the infrared source from a ratio of outputs of infrared sensors with at least two sensing wavelength bands of an infrared radiation from a monitored area, produces the intensity of infrared radiation of either of the bands from the computed temperature and computes a heating area from the intensity and the output of a corresponding infrared sensor. The process determines the progress of a fire.
    Type: Grant
    Filed: August 21, 1990
    Date of Patent: October 6, 1992
    Assignees: Nippon Mining Co., Ltd., Kajima Corporation
    Inventors: Haruhisa Goto, Kazunari Naya, Hideo Segawa, Hiroomi Sato, Keiichi Miyamoto
  • Patent number: 5146003
    Abstract: A 3-amino-2-hydroxybornane derivative represented by formula (I): ##STR1## wherein R represents a furfuryl group, a 1-methylpyrrolylmethyl group, or a benzyl group, is disclosed. The compound is useful as a ligand in an asymmetric Michael reaction, particularly for the production of an optically active muscone.
    Type: Grant
    Filed: December 6, 1990
    Date of Patent: September 8, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventor: Kazuhiko Tanaka
  • Patent number: 5141782
    Abstract: This invention permits, in a colored galvanized coating using Ti-Zn, Mn-Zn, Ti-Mn-Zn, (Ti, Mn)-(Cu, Ni, Cr)-Zn, etc., to clearly and stably develop yellow, purple, green, blue or other color by controlling the composition of a galvanizing bath and oxidizing conditions. Further, gold, dark red, olive gray and iridecence color which have not yet obtained can be developed. The color development effected by this invention is clearer than conventional. Instead of galvanizing, the spraying process may be adopted. The surface painting on the colored zinc coating is effective.
    Type: Grant
    Filed: May 2, 1991
    Date of Patent: August 25, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Masatoshi Tomita, Susumu Yamamoto, Chikara Tominaga, Kazuya Nakayama
  • Patent number: 5137847
    Abstract: A method of producing a GaAs single crystal substrate comprises the steps of conducting a first-stage annealing by vacuum-sealing a GaAs single crystal wafer and arsenic in a heat-resistant vessel and heating the wafer to a temperature of 1050.degree. to 1150.degree. C. while exposing it to arsenic vapor pressure, cooling the wafer to room temperature at a cooling rate of 1.degree.-25.degree. C./min., removing the wafer from the vessel, etching the wafer and placing it in another vessel, conducting a second-stage annealing by heating the wafer to a temperature of 910.degree. to 1050.degree. C. in a non-oxidizing atmosphere, cooling the wafer to room temperature at a cooling rate of 1.degree.-25.degree. C./min., removing it from the vessel, etching the wafer, conducting a third-stage annealing by vacuum-sealing the wafer and arsenic in the heat-resistant vessel and heating the wafer to a temperature of 520.degree.-730.degree. C. while exposing it to arsenic vapor, and cooling the wafer at least down to 400.
    Type: Grant
    Filed: December 12, 1991
    Date of Patent: August 11, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Haruhito Shimakura, Manabu Kanou
  • Patent number: 5137653
    Abstract: This invention provides a novel alkanoyl ester compound represented by general formula (I): ##STR1## (wherein A is of --, --O--, ##STR2## B is ##STR3## l and m are 1 or 2 provided that both are not simultaneously 2, k and n are an integer of 1 or more, respectively, provided that k>n, and R is an alkyl group), a liquid crystal composition containing this compound, a novel alkanoylphenyl compound or a novel alkanoylbiphenyl compound as an intermediate for the production of the above compound, and a method of producing the same. These novel alkanoyl ester compounds are excellent in the stability against light and the like and can take a liquid crystal state at a wide temperature range. Particularly, these compounds form liquid crystals of ferroelectricity having a large spontaneous polarization and a fast response rate by introducing an optically active group into the compound, so that they develop a very excellent effect as a starting material for optoelectronics and its related elements.
    Type: Grant
    Filed: October 18, 1991
    Date of Patent: August 11, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Toshihiro Hirai, Atsushi Yoshizawa, Isa Nishiyama, Mitsuo Fukumasa, Nobuyuki Shiratori, Akihisa Yokoyama
  • Patent number: 5135629
    Abstract: In a system for thin film deposition by vapor growth, the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented by the provision therein of an anti-contamination means which is chosen from among (1) an electrolytic cop-per foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the copper foil, (2) an electrolytic copper foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the foil and coated with a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth onto the substrate, (3) a corrugated metal foil, and (4) a metal foil formed with a plurality of irregularities by embossing.
    Type: Grant
    Filed: June 8, 1990
    Date of Patent: August 4, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Susumi Sawada, Osamu Kanou, Hironori Wada, Junichi Anan, Takakazu Seki
  • Patent number: 5134292
    Abstract: Infrared rays radiated from a moving object is converged into a plurality of infrared ray detectors by optical system. Detecting area is instituted by the optical system so as to put the infrared rays into a plurality of the infrared ray detectors with time difference therebetween. Signal processing unit produces a detecting signal when there is a predetermined time difference between signals produced by a plurality of the infrared ray detectors. It is possible to avoid wrong operation which is caused by popcorn noise and a differential noise having a bit of time difference caused by temperature gradient in space. Forming a curved imaginary boundary line, a plurality of detecting zones are disposed at out side and inside of the curved imaginary boundary line to detect the object invading from any direction.
    Type: Grant
    Filed: August 12, 1991
    Date of Patent: July 28, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Hideo Segawa, Kazunari Naya, Haruhisa Goto, Kazuyuki Sato
  • Patent number: 5126482
    Abstract: Novel fluorine-containing compounds and processes for producing the same are disclosed, the compounds being represented by the general formula (I): ##STR1## wherein R.sup.1 represents an alkyl group or an alkylvinyl group; R.sup.2 represents a fluoroalkyl group; and Y represents a carboxyl group, a chloroformyl group, an alkoxyalkoxycarbonyl group or a hydroxymethyl group.
    Type: Grant
    Filed: January 3, 1991
    Date of Patent: June 30, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Takeshi Nakai, Osamu Takahashi
  • Patent number: 5098602
    Abstract: This invention provides a novel halogen-containing ester compound represented by the following general formula (I): ##STR1## (wherein R is an alkyl group, A is selected from a single bond, --O--, --COO-- and --CO--, both of X and Y are halogen atoms or either one of X and Y is a halogen atom and the other is a hydrogen atom, each of m and n is 0 or 1, m+n=0 or 1, each of k and l is an integer of 1 or more, provide k<l), a liquid crystal composition and a light switching element each containing the above compound as well as a novel fluorophenol compound represented by the following general formula (II): ##STR2## (wherein each of k and l is an integer of 1 or more, provided k<l) as an intermediate for the synthesis of the above ester compound and a method of producing the same.
    Type: Grant
    Filed: May 2, 1989
    Date of Patent: March 24, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Toshihiro Hirai, Atsushi Yoshizawa, Isa Nishiyama, Mitsuo Fukumasa, Nobuyuki Shiratori, Akihisa Yokoyama
  • Patent number: 5097373
    Abstract: There is disclosed a laminated magnetic core characterized in that core-forming thin sheets each having a surface roughness such that the maximum height Rmax is at least 1 .mu.m are laminated together with a sheet-to-sheet distance of 2 to 10 .mu.m, desirably 3 to 6 .mu.m and that at least a part of protruded portions of the opposite roughed surfaces is diffusion-bonded to each other at the interface between adjacent thin sheets. The laminated magnetic core may have innumerable voids present at the diffusion-bonded interface between the adjacent thin sheets. This invention further provides a method of manufacturing a laminated magnetic core comprising the steps of providing a plurality of core-forming thin sheets each having a surface roughness such that the maximum height Rmax is at least 1 .mu.m; laminating and bonding said core-forming thin sheets one upon another through an organic adhesive, desirably at a sheet-to-sheet distance of 2 to 10 .mu.
    Type: Grant
    Filed: August 2, 1989
    Date of Patent: March 17, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventor: Norio Yuki
  • Patent number: 5094787
    Abstract: In manufacturing a high-density ITO sputtering target by press-molding a powder mixture consisting essentially of indium oxide and tin oxide is compacted and the resulting compact is sintered. The sintering is performed in an atmosphere of oxygen under a pressure of at least one atmosphere (gauge pressure). The present invention offers very advantageous effects from the industrial viewpoint in that it permits mass production of high-performance, high-density ITO targets at low cost using mass productivity.
    Type: Grant
    Filed: November 21, 1990
    Date of Patent: March 10, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Koichi Nakajima, Noriaki Sato
  • Patent number: 5089226
    Abstract: A method of protecting an austenitic stainless steel-made equipment to be exposed to a fluid containing sulfides from the occurrence of stress-corrosion cracking is disclosed, comprising washing the equipment with a mineral oil containing at least one compound selected from organic amines and acid amide compounds in stopping the operation thereof.
    Type: Grant
    Filed: February 28, 1989
    Date of Patent: February 18, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Mitsuhiro Ohashi, Shuzo Mimaya
  • Patent number: 5089196
    Abstract: A non-magnetic substrate used for a magnetic head comprising a pair of non-magnetic substrates, and a magnetic layer structure sandwiched between the pair of non-magnetic substrates. The magnetic layer structure is comprised, of alternately laminated magnetic layers and intermediate insulating layers. The invention discloses for the substrate material a composition expressed by Zn.sub.x M.sub.y Co.sub.2-x-y O.sub.2, with the proviso that M is Mn or Ni, 0.ltoreq.x.ltoreq.0.4, 0.4.ltoreq.y.ltoreq.1.0, 0.8.ltoreq.x+y.ltoreq.1.0, or Co.sub.x Ni.sub.2-x O.sub.2, with the proviso that 0.2.ltoreq.x.ltoreq.1.8, and having a rock-salt structure.
    Type: Grant
    Filed: April 12, 1991
    Date of Patent: February 18, 1992
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Eiji Itoh, Ryuichi Nagase, Kazuhiro Saito, Hiroshi Hosaka, Hihumi Nagai
  • Patent number: 5077005
    Abstract: There is provided a high-conductivity copper alloy with excellent workability and heat resistance, characterized by the alloy consists essentially of, by weight, at least one element selected from the group consisting of______________________________________ 10-100 ppm In (indium), 10-1000 ppm Ag (silver), 10-300 ppm Cd (cadmium), 10-50 ppm Sn (tin), 10-50 ppm Sb (antimony), 3-30 ppm Pb (lead), 3-30 ppm Bi (bismuth), 3-30 ppm Zr (zirconium), 3-50 ppm Ti (titanium) and 3-30 ppm Hf (hafnium), ______________________________________and the balance copper. S (sulfur) and O (oxygen) as unavoidable impurities are controlled to amounts of less than 3 ppm S, and less than 5 ppm O, respectively. Other unavoidable impurities are controlled to less than 3 ppm in total amount. The alloy is very suitable for applications such as forming magnet wires and other very thin wires, lead wires for electronic components, lead members for tape automated bonding (TAB) and the like, and members for printed-circuit boards.
    Type: Grant
    Filed: February 27, 1990
    Date of Patent: December 31, 1991
    Assignee: Nippon Mining Co., Ltd.
    Inventor: Masanori Kato
  • Patent number: 5070035
    Abstract: A method for producing a semiconductor device according to the present invention comprises the following steps. A PxOy (x>0, y>0) insulating layer is formed on III-V group compound semiconductor substrate including indium and/or phosphorus. Then the substrate is subjected to heat treatment, and finally an electrode metal layer is formed on the insulating layer. This method ensures to increase the barrier height of MES type diode and the forward current-voltage characteristics of Schottky diode. Further, another method of the present invention comprises the following steps. An aluminum or indium layer is formed on III-V group compound semiconductor substrate including indium or phosphorus. The substrate is subjected to a first heat treatment. Then an insulating layer composed of phosphoric oxide PxOy (x>0, y>0) is formed on the aluminum or indium layer. Further, the substrate is subjected to a second heat treatment, and finally an electrode metal layer is formed on the insulating layer.
    Type: Grant
    Filed: August 21, 1989
    Date of Patent: December 3, 1991
    Assignee: Nippon Mining Co., Ltd.
    Inventors: Kazuo Hattori, Mitsuhiro Taniguchi