Abstract: An iron-based sintered body with a rustproof function comprises a layer containing 0.01 to 5 at % of indium on the surface of the iron-based sintered body, or an iron-based sintered body with a rustproof function contains 0.01 to 5 at % of indium throughout the sintered body, and the iron-based sintered body having iron as its principal component is manufactured by performing sintering in a gas atmosphere containing indium vapor or indium. Thereby obtained is an iron-based sintered body, as well as the manufacturing method thereof, capable of easily improving the rustproof effect without having to hardly change the conventional process.

Abstract: Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including the steps of forging and recrystallization annealing, and thereafter rolling, a tantalum ingot or billet having been subject to melting and casting, and forming a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target. As a result, evenness (uniformity) of the film is enhanced, and quality of the sputter deposition is improved.

Abstract: A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X?m, 0<Y?0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. A ZnO based sputtering target is obtained which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.

Abstract: The present invention provides a method of recovering silver safely and efficiently from a chloride or bromide bath containing various metals. Specifically, a method of recovering silver from a hydrochloric acid solution containing alkali and/or alkali earth metal chloride, silver; copper and iron ions, comprising the steps of: (1) bringing the solution into contact with a strong-base anion-exchange resin to adsorb silver; copper, and iron on the anion-exchange resin; (2) then washing the anion-exchange resin with water to remove the adsorbed copper and iron; and (3) then bringing the ion-exchange resin into contact with a hydrochloric acid solution to elute the adsorbed silver, is provided.

Abstract: A manganese alloy sputtering target characterized in that oxygen is 1000 ppm or less, sulfur is 200 ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that it is susceptible to cracking and has a low rupture strength. A manganese alloy sputtering target which can form a thin film exhibiting high characteristics and high corrosion resistance while suppressing generation of nodules or particles is thereby obtained.

Abstract: The object of the present invention is to provide a pretreating agent for electroless plating that is stable and soluble in organic solvents, a method of electroless plating with excellent adhesiveness using it and an electroless plated product. An object to be plated is pre-treated using a pretreating agent for electroless plating comprising a noble metal soap of naphthenic acid or a fatty acid having 5 to 25 carbon atoms or preferably using a pretreating agent for electroless plating additionally comprising an imidazole silane coupling agent or other silane coupling agent having metal capturing ability, and then electroless plated. The noble metal soap is preferably a palladium soap.

Abstract: Proposed is a method of recovering valuable metal from scrap containing conductive oxide including the steps of using scrap containing conductive oxide and performing electrolysis while periodically inverting the polarity, and recovering the scrap as hydroxide. With the foregoing method of recovering valuable metal from scrap containing conductive oxide, oxide system scrap is conductive oxide and a substance that can be reduced to metal or suboxide with hydrogen. This method enables to efficiently recover valuable metal from sputtering target scrap containing conductive oxide or scrap such as mill ends of conductive oxide that arise during the production of such a sputtering target.

Abstract: A copper base alloy for electronic parts containing 2.0 to 4.0 mass % of Ti and 0.05 to 0.50 mass % of one or more of Fe, Co, Ni, Si, Cr, V, Nb, Zr, B and P, wherein the content of other impurity elements is 0.010 mass % or less in total, and the content of each of C and O is 0.010 mass % or less. This copper base alloy can be used without heat treatment after its press working into a part of a connector or the like; or can be also used in a state in which the alloy is subjected to a specific heat treatment so as to be improved in spring characteristics after its press working.

Abstract: Proposed is a method of recovering valuable metal from scrap containing conductive oxide including the steps of using an insoluble electrode as either an anode or a cathode, using a scrap containing conductive oxide as the counter cathode or anode, performing electrolysis while periodically inverting the polarity, and recovering the scrap as hydroxide. With the foregoing method of recovering valuable metal from scrap containing conductive oxide, oxide system scrap is conductive oxide and a substance that can be reduced to metal or suboxide with hydrogen. This method enables the efficient recovery of valuable metal from sputtering target scrap containing conductive oxide or scrap such as mill ends of conductive oxide that arise during the production of such a sputtering target.

Abstract: An electroless palladium plating liquid, with excellent bath stability, that can provide a film with excellent corrosion resistance, solder bondability, and wire bondability is provided. The invention is an electroless palladium plating liquid, containing: a water soluble palladium compound; at least one of ammonia, an amine compound, an aminocarboxylic acid compound, and carboxylic acid as a complexing agent; and bismuth or a bismuth compound as a stabilizer. Preferably the electroless palladium plating liquid further contains at least one of hypophosphorous acid, phosphorous acid, formic acid, acetic acid, hydrazine, a boron hydride compound, an amine borane compound, and salts thereof as a reducing agent.

Abstract: Provided is a copper anode or a phosphorous-containing copper anode for use in performing electroplating copper on a semiconductor wafer, wherein purity of the copper anode or the phosphorous-containing copper anode excluding phosphorous is 99.99 wt % or higher, and silicon as an impurity is 10 wtppm or less. Additionally provided is an electroplating copper method capable of effectively preventing the adhesion of particles on a plating object, particularly onto a semiconductor wafer during electroplating copper, a phosphorous-containing copper anode for use in such electroplating copper, and a semiconductor wafer comprising a copper layer with low particle adhesion formed by the foregoing copper electroplating.

Abstract: Proposed is a zinc oxide-based transparent conductor characterized in having zinc oxide as its primary component, containing an element at 1 to 10 atomic % which has a smaller ion radius than zinc in the zinc oxide and serves as an n-type dopant for the zinc oxide, and containing nitrogen in which the atomicity ratio of nitrogen in relation to the n-type dopant (nitrogen/n-type dopant) is 0.3 to 0.6. In the development of a transparent conductor that does not contain In, which is an expensive raw material with concern of resource depletion, the limit of the conventional development technique known as the single-dopant method is exceeded, a guide to dopant selection as a specific means for realizing the co-doping theory is indicated, and a transparent conductor having low resistivity is provided.

Abstract: A manufacturing method of a Ta sputtering target in which a Ta ingot or billet formed by melting and casting is subject to forging, annealing, rolling processing and the like to prepare a sputtering target, wherein the ingot or billet is forged and thereafter subject to recrystallization annealing at a temperature of 1373K to 1673K. As a result of improving and devising the forging process and heat treatment process, the crystal grain diameter can be made fine and uniform, and a method of stably manufacturing a Ta sputtering target superior in characteristics can be obtained thereby.

Abstract: A barrier film for a flexible copper substrate comprising a Co—Cr alloy film containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is provided. The barrier film has a thickness of 3 to 150 nm and a film thickness uniformity of 10% or less at 1?. A sputtering target for forming a barrier film comprising a Co—Cr alloy containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is also provided. The relative magnetic permeability in the in-plane direction of the sputtered face of the target is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling and inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch and has barrier characteristics that will not change even when the temperature rises due to heat treatment or the like.

Abstract: Provided are high purity copper sulfate wherein the content of Ag impurities is 1 wtppm or less, and having a purity of 99.99 wt % or higher, and a manufacturing method of high purity copper sulfate including the steps of dissolving crude copper sulfate crystals or copper metal, and subjecting this to active carbon treatment or solvent extraction and active carbon treatment in order to realize recrystallization. The present invention aims to provide a manufacturing method of high purity copper sulfate capable of efficiently removing impurities at a low cost by dissolving commercially available copper sulfate crystals in purified water or acid and thereafter subjecting this to the refining process, and high purity copper sulfate obtained thereby.

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

Abstract: Proposed is a method for collecting valuable metal from an ITO scrap by subjecting the ITO scrap to electrolysis and collecting the result as metallic indium. Specifically, the present invention proposes a method for selectively collecting metallic indium including the steps of subjecting the ITO scrap to electrolysis in an electrolytic bath partitioned with a diaphragm or an ion-exchange membrane, subsequently extracting anolyte temporarily, eliminating tin contained in the anolyte by a neutralization method, a replacement method or other methods, placing a solution from which the tin was eliminated in a cathode side again and performing electrolysis thereto; or a method for collecting valuable metal from an ITO scrap including the steps of obtaining a solution of In or Sn in an ITO electrolytic bath, eliminating the Sn in the solution, and collecting In in the collecting bath.

Abstract: An object of the present invention is to provide a Corson alloy having significantly improved characteristics, i.e. high strength and high electrical conductivity, by enhancing the effect of addition of Cr to a Cu—Ni—Si system alloy. There is provided a copper alloy for electronic materials comprising 1.0-4.5% by mass Ni, 0.50-1.2% by mass Si, 0.003-0.3% by mass Cr wherein the weight ratio of Ni to Si satisfies the expression: 3?Ni/Si?5.5, and the balance being Cu and incidental impurities, wherein particles of Cr—Si compounds having a size of 0.1 ?m to 5 ?m are dispersed in the alloy and the dispersed particles having an atomic concentration ratio of Cr to Si of 1 to 5 and a dispersion density of no more than 1×106/mm2.

Abstract: Proposed is a method for collecting valuable metal from an ITO scrap in which a mixture of indium hydroxide and tin hydroxide or metastannic acid is collected by subjecting the ITO scrap to electrolysis in pH-adjusted electrolyte, and roasting this mixture as needed to collect the result as a mixture of indium oxide and tin oxide. This method enables the efficient collection of indium hydroxide and tin hydroxide or metastannic acid, or indium oxide and tin oxide from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.

Abstract: Provided is iron-based metal powder for powder metallurgy including a metallic soap containing at least one or more types selected from a group of Ag, Au, Bi, Co, Cu, Mo, Ni, Pd, Pt, Sn, Te and W having a higher standard oxidization potential than iron, and an iron sintered body having a rust prevention function, wherein at least one or more types of metallic soap selected from a group of Ag, Au, Bi, Co, Cu, Mo, Ni, Pd, Pt, Sn, Te and W having a higher standard oxidization potential than iron is added to iron-based metal powder for powder metallurgy, and sintering is performed thereto. As a result, obtained is mixed powder for powder metallurgy capable of improving the rust prevention effect easily without having to hardly change the conventional processes.