Patents Assigned to Nippon Silicon Kabushiki Kaisha
  • Method of gettering unintentional mobile impurities in silicon wafer by using a damaged layer exposed to the reverse surface thereof
    Patent number: 5130260
    Abstract: A method of gettering unintentional mobile impurities starts with production of an damaged portion on the reverse side of a silicon wafer, and the silicon wafer is placed in a high temperature vacuum ambience so that the unintentional mobile impurities are firstly trapped by the damaged portion and, then, evacuated to the high temperature vacuum ambience.
    Type: Grant
    Filed: July 12, 1991
    Date of Patent: July 14, 1992
    Assignees: Mitsubishi Materials Corporation, Nippon Silicon Kabushiki Kaisha
    Inventors: Hisaaki Suga, Yoshinobu Nakada, Kazuhiro Akiyama, Shunji Ishibashi